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Efficient, High Brightness 1030 nm DBR Tapered Diode Lasers With Optimized Lateral Layout
/en/research/publications/efficient-high-brightness-1030-nm-dbr-tapered-diode-lasers-with-optimized-lateral-layout
Efficient, high brightness 1030 nm distributed Bragg reflector (DBR) tapered diode lasers with optimized lateral waveguide and grating designs are presented in this paper. The layout changes…
High-quality AlN grown on a thermally decomposed sapphire surface
/en/research/publications/high-quality-aln-grown-on-a-thermally-decomposed-sapphire-surface
In this study we show how to realize a self-assembled nano-patterned sapphire surface on 2 inch diameter epi-ready wafer and the subsequent AlN overgrowth both in the same metal-organic vapor…
Reduction of Optical Feedback Originating From Ferroelectric Domains of Periodically Poled Crystals
/en/research/publications/reduction-of-optical-feedback-originating-from-ferroelectric-domains-of-periodically-poled-crystals
Optical feedback originating from the interfaces of the periodically poled domains of a nonlinear crystal is usually blocked by a bulky optical isolator to avoid an influence on the pump source.…
Efficient 600-W-Laser Bars for Long-Pulse Pump Applications at 940 and 975 nm
/en/research/publications/efficient-600-w-laser-bars-for-long-pulse-pump-applications-at-940-and-975nbspnm
We report the first demonstration of 1.2 J-emission into long pulses (≥2 ms) from passively cooled laser bars. These efficient high-fill-factor bars were developed for long-pulse pumping…
Triangular-shaped sapphire patterning for HVPE grown AlGaN layers
/en/research/publications/triangular-shaped-sapphire-patterning-for-hvpe-grown-algan-layers
AlGaN growth by hydride vapor phase epitaxy on patterned sapphire substrates has been investigated. Growth on honeycomb-shaped holes is disturbed by parasitic growth of c-plane oriented AlGaN…
Influence of AlN buffer layer on growth of AlGaN by HVPE
/en/research/publications/influence-of-aln-buffer-layer-on-growth-of-algan-by-hvpe
To the end of improvement of layer morphology and crystalline perfection of thick AlGaN layers grown by hydride vapor phase epitaxy (HVPE) as well as for the suppression of crystallite formation…
Avoidance of instable photoluminescence intensity from AlGaN bulk layers
/en/research/publications/avoidance-of-instable-photoluminescence-intensity-from-algan-bulk-layers
The emission intensity from c-plane AlGaN bulk layers changes strongly on time scales from seconds to hours during above band gap illumination in photoluminescence experiments. Responsible for this…
Shifted Excitation Raman Difference Spectroscopy applied to extraterrestrial particles returned from the asteroid Itokawa
/en/research/publications/shifted-excitation-raman-difference-spectroscopy-applied-to-extraterrestrial-particles-returned-from-the-asteroid-itokawa
Two extraterrestrial particles from the asteroid Itokawa are investigated applying Shifted Excitation Raman Difference Spectroscopy (SERDS). These particles were returned by the Hayabusa mission of…
Resonator-Length Dependence of Electron-Beam-Pumped UV-A GaN-Based Lasers
/en/research/publications/resonator-length-dependence-of-electron-beam-pumped-uv-a-gan-based-lasers
The dependence of resonator length on the threshold power and emission wavelength of electron-beam-pumped UV-A edge-type emitting lasers is demonstrated. The lowest pump power thresholds are achieved…
Stability Analysis of Digital Microwave Power Amplifiers
/en/research/publications/stability-analysis-of-digital-microwave-power-amplifiers
This paper presents a stability analysis of microwave power amplifiers (PAs) driven by binary pulse trains, as in the case of class-S PAs. First, using a simplified digital PA test bench in class-D…