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Exciton localization in semipolar (1122) InGaN multiple quantum wells
/en/research/publications/exciton-localization-in-semipolar-1122-ingan-multiple-quantum-wells
The exciton localization in semipolar (1122) InxGa1-xN (0.13≤x≤0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A…
An influence of the local strain on cathodoluminescence of GaN/AlxGa1-xN nanowire structures
/en/research/publications/an-influence-of-the-local-strain-on-cathodoluminescence-of-ganalxga1-xn-nanowire-structures
Near-band-edge excitonic emission shift is investigated as a measure of the local strain in GaN nanowires with single AlxGa1-xN sections of various Al contents (x=0.0, 0.22, 0.49, 1.0). Complementary…
Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120)
/en/research/publications/structural-and-optical-properties-of-1122-ingan-quantum-wells-compared-to-0001-and-1120
We benchmarked growth, microstructure and photo luminescence (PL) of (1122) InGaN quantum wells (QWs) against (0001) and (1120). In incorporation, growth rate and the critical thickness of (1122) QWs…
Efficient Current Injection Into Single Quantum Dots Through Oxide-Confined p-n-Diodes
/en/research/publications/efficient-current-injection-into-single-quantum-dots-through-oxide-confined-p-n-diodes
Current injection into single quantum dots embedded in vertical p-n-diodes featuring oxide apertures is analyzed in the low-injection regime suitable for single-photon emitters. The experimental and…
Optimization of the Design of Terahertz Detectors Based on Si CMOS and AlGaN/GaN Field-Effect Transistors
/en/research/publications/optimization-of-the-design-of-terahertz-detectors-based-on-si-cmos-and-algangan-field-effect-transistors
TeraFETs are THz power detectors based on field-effect transistors (FETs) integrated with antennas. The first part of this paper discusses the design of Si CMOS TeraFETs leading to an optimized…
The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300K
/en/research/publications/the-impact-of-low-al-content-waveguides-on-power-and-efficiency-of-9xx-nm-diode-lasers-between-200-and-300k
We present results on investigations of 9xx nm, GaAs-based diode lasers with 100 µm wide, 4 mm long stripes operating at temperatures between 200 and 300 K. As temperatures are reduced…
Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces
/en/research/publications/defect-distribution-and-compositional-inhomogeneities-in-al05ga05n-layers-grown-on-stepped-surfaces
This study reports on defect distribution and compositional homogeneity of AlxGa1-xN layers with a nominal composition x of 0.5 grown on AlN by metal organic vapor phase epitaxy. The AlN layers with…
CBr4-based in-situ etching of GaAs, assisted with TMAI and TMGa
/en/research/publications/cbr4-based-in-situ-etching-of-gaas-assisted-with-tmai-and-tmga
In-situ etching of GaAs with CBr4 in metalorganic vapor phase epitaxy has been investigated at different temperatures using in-situ reflectivity to measure the etch rates. Deep (150 nm) etching…
Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes
/en/research/publications/efficient-carrier-injection-and-electron-confinement-in-uv-b-light-emitting-diodes
The effects of the aluminum content x and the magnesium doping concentration in the AlxGa1-xN:Mg electron blocking layer on the emission characteristics of ultraviolet lightemitting diodes has been…
On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells
/en/research/publications/on-optical-polarization-and-charge-carrier-statistics-of-nonpolar-ingan-quantum-wells
Optical polarization is a fundamental property of light emission from m-plane InGaN quantum wells. It is a result of band structure, anisotropic strain, the degree of polarization depending on…