High-power, highly efficient broad area diode lasers that are wavelength-stabilized by integrated Bragg gratings are in high demand for example for pumping narrow absorption bands in solid-state lasers. FBH has been conducting intensive research leading to continuous improvements of the institute’s DFB-BA lasers.
Due to increasing corona infections, we temporarily reduce our research operations to a minimum, as ordered by the Senate Chancellery - Higher Education and Research of the State of Berlin. This preventive measure is currently valid until April 19, 2020.
In der Abteilung Mikrowellentechnik suchen wir für die elektrische Messtechnik und die Bestückung von High-end-SMD-Baugruppen eine(n) Technische(n) Mitarbeiter(in).
Am neu gegründeten Joint Lab InP Devices in Berlin sollen Halbleiterstrukturen und -bauelemente für Terahertz-(THz)-Anwendungen erforscht und integrierte Komponenten für den Einsatz der elektronischen THz-Technologie entwickelt werden.
Achtes Joint Lab am Ferdinand-Braun-Institut gestartet.
High-power, highly efficient broad area diode lasers that are wavelength-stabilized by integrated Bragg gratings are in high demand for example for pumping narrow absorption bands in solid-state lasers. FBH has been conducting intensive research leading to continuous improvements of the institute’s DFB-BA lasers.
Für unser Joint-Lab Photonic Quantum Technologies suchen wir eine/n Doktorand/in.
To make older systems ready for digitization, FBH has been developing iSensU to provide ad-hoc connectivity to legacy devices, black-box sensors, and industrial light towers. iSensU will shortly be made available to FBH's partner institutes within Research Fab Microelectronics Germany.
Für das Ausbildungsjahr 2020 bietet das FBH vier Ausbildungsplätze zum Mikrotechnologen/Mikrotechnologin – Schwerpunkt Halbleitertechnik an.
The AlGaN material system is of increasing interest for UV-based optoelectronic devices such as light emitting diodes (LEDs), laser diodes and photodetectors. The electronic properties of AlxGa1-xN compounds are strongly influenced by the mole fraction x of AlN, as well as by the content of residual impurities and dopant elements like H, C, O, Si, and Mg.
Power amplifiers (PA) are key components of any communication, radar or satellite system. At the FBH, GaN power amplifier MMICs are realized providing both a high output power and a high efficiency. Based on these MMICs, a hybrid balanced PA was realized delivering a maximum output power Pmax of 21.9 W at 10 GHz. The maximum linear amplification is around 24 dB with an overall efficiency of the circuit of 31%.
The phenomenon known as filamentation has been investigated at FBH for blue laser diodes. The results allow for a better understanding of the interplay of epitaxial layer homogeneity, basic laser parameters, and filamentation effects. This is an important step towards the improvement of high-power (Al,In)GaN-based laser diodes.
Epitaxial growth of GaN/AlGaN layers for light emitters in the ultraviolet spectral range has increasingly attracted interest in recent years. To improve the internal quantum efficiency of such LEDs, epitaxial layers with reduced dislocation densities are required. The FBH successfully fabricates patterned sapphire substrates and uses them for epitaxial lateral overgrowth (ELO), thus reducing strain and dislocation density in GaN/AlGaN layers.
Abstracts for the ISLC "International Semiconductor Laser Conference" can be submitted now.
The International Conference on UV LED Technologies & Applications will take place in Berlin from April 26-29, 2020
The IWN 2020 workshop will highlight the latest advances in the field of group-III nitride materials, nanostructures and devices. It is co-organized by FBH.
Recruiting and securing skilled personnel plays a vital role at the institute - FBH coordinates projects related to:
The FBH is also the central contact for the respective issues in the Photonics Cluster.
at numerous universities and colleges - on a regional as well as national level
