In a broad mix of theory and practice, 40 students intensively explored modern information and communication technologies and their environmental impact. The first “Green ICT Camp” organized by the Research Fab Microelectronics Germany (FMD) was held for five days at the Ferdinand-Braun-Institut.

Emerging technologies demand for precise control over film thickness and material properties. At FBH, we provide a platform for obtaining conformal dielectric layers with atomic-scale precision and control, addressing the increasing demands for future device landscapes.

Berlin-based Ferdinand-Braun-Institut (FBH) and the University of Glasgow to deepen cooperation, focusing on ultra-high-power photonic applications and enhanced exchange of photonics experts and students through the newly established Visiting Professorship of Paul Crump from FBH in Glasgow.

We have developed a new 500 W diode laser module concept, tailored for pumping Yb-doped fiber lasers at 976 nm. The module uses FBH’s DBR-stabilized double emitters in their proprietary side-cooled stacks, enabling a very simple and cost‑efficient module design.

For the first time, German research partners have demonstrated the practical implementation of an aluminum nitride-based value chain for power semiconductors, from base material growth to device fabrication.

With a new pick-and-flip station and an upgraded die-bonder for automatic picking from 8” dicing frames, our mounting and assembly department is set for future tasks. The upgrade improves handling of sensitive chips from larger wafers for our increasingly complex projects.

Here you can download the latest annual report with the most important events and research results from 2023 and 2024.