1. Research
  2. III-V Technology
  3. Mounting & Assembly
  4. Mounting of III/V electronic devices

Mounting of III/V electronic devices

The FBH mounts single GaN-microwave transistors with powers up to 100 W as well as MMICs (up to the mm-wavelength range) which have been processed in-house. The devices are characterized, aged, and delivered to cooperating partners. Furthermore GaN/GaO power devices for Joint Lab Power Devices and state-of-the-art THz GaN- and InP-devices were assembled for module application.

Challenges in the assembly of these devices

  • Thermal management in power components (ensuring of a low thermal resistance)
  • Packaging for high powers and high frequencies simultaneously (handling of high currents, avoiding of parasitic effects)
  • Electrical stability (oscillation free)
  • Wire bonding with high current load of the bonds

Please find further technical details and performance figures on electronic devices from the FBH here.