Mounting of III/V electronic devices
The FBH mounts single GaN-microwave transistors with powers up to 100 W as well as MMICs (up to the mm-wavelength range) which have been processed in-house. The devices are characterized, aged, and delivered to cooperating partners. Furthermore GaN/GaO power devices for Joint Lab Power Devices and state-of-the-art THz GaN- and InP-devices were assembled for module application.
Floating-Ground RF Power GaN-HEMT
Hybrid integrated GaN half bridge
Digital GaN power amplifier
GaN based half bridge for current inverter
GaN based THz camera chip
Challenges in the assembly of these devices
- Thermal management in power components (ensuring of a low thermal resistance)
- Packaging for high powers and high frequencies simultaneously (handling of high currents, avoiding of parasitic effects)
- Electrical stability (oscillation free)
- Wire bonding with high current load of the bonds
Please find further technical details and performance figures on electronic devices from the FBH here.