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Micro-integrated high-power infrared laser source for short-pulse pumping applications
/en/research/research-news/micro-integrated-high-power-infrared-laser-source-for-short-pulse-pumping-applications
The FBH has developed a laser system with high beam quality that is capable of combining two laser beams practically without any losses. The coupled radiation reaches >12 W in cw mode at…
Compact, efficient, robust and reliable: FBH developments for space applications
/en/media-center/press-releases/compact-efficient-robust-and-reliable-fbh-developments-for-space-applications
The Ferdinand-Braun-Institut presents its space-compatible, ultra-narrow linewidth diode laser modules and systems along with further III-V components for satellite applications at "Space Tech Expo…
Hot off the press - FBH's annual report
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FBH's most important events and results achieved in 2018/19
Nanofabrication protocols for advanced quantum photonic circuits based on self-assembled quantum dots
/en/events/nanofabrication-protocols-for-advanced-quantum-photonic-circuits-based-on-self-assembled-quantum-dots
Nanofabrication protocols for advanced quantum photonic circuits based on self-assembled quantum dots Tommaso PregnolatoNiels Bohr Institut, Universität Kopenhagen
Development of optical microresonators and waveguides – the basis for an error-free analyzer for Bell states
/en/research/research-news/development-of-optical-microresonators-and-waveguides-the-basis-for-an-error-free-analyzer-for-bell-states
FBH contributes its expertise in the field of process technology and has developed a design which combines sufficient mechanical stability with excellent optical properties.
Analytical description of UV-LED degradation allows to predict device lifetime
/en/research/research-news/analytical-description-of-uv-led-degradation-allows-to-predict-device-lifetime
FBH has investigated current induced degradation processes of deep UV LEDs. The derived acceleration factors point to the importance of optimizing the charge carrier distribution to improve the…
Efficient power generation – at high frequencies, high voltages and with short switching times
/en/media-center/press-releases/efficient-power-generation-at-high-frequencies-high-voltages-and-with-short-switching-times
At the "European Microwave Week" (EuMW), FBH will present its portfolio in III-V electronics: components for the digitization of mobile communications, for industrial and biomedical systems as well…
Focus on defects
/en/media-center/press-releases/focus-on-defects
For four days, scientists discussed methods for analysis of crystal imperfections at the 18th International DRIP Conference in Berlin
Lateral β-Ga2O3 MOSFET for power switching applications with a breakdown voltage of 1.8 kV
/en/research/research-news/lateral-b-ga2o3-mosfet-for-power-switching-applications-with-a-breakdown-voltage-of-18-kv
FBH and IKZ worked on the fabrication of lateral β-Ga2O3-based power transistors with enhanced device performance through combining optimized layer growth and improved process technology.