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High-power broad-area buried-mesa lasers
/en/research/publications/high-power-broad-area-buried-mesa-lasers
Broad area lasers emitting near 940 nm are fabricated using a process based on two-step epitaxy. The n-side of the layer structure and the active layer are grown during the first epitaxial step, the…
Design and Realization of a Miniaturized DFB Diode Laser-Based SHG Light Source With a 2-nm Tunable Emission at 488 nm
/en/research/publications/design-and-realization-of-a-miniaturized-dfb-diode-laser-based-shg-light-source-with-a-2-nm-tunable-emission-at-488-nm
We present a concept and the realization of a diode laser-based second harmonic generation (SHG) light source at 488 nm with the capability of a spectral tuning over 2 nm (83 cm-1) and…
Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology
/en/research/publications/performance-study-of-a-248-ghz-voltage-controlled-hetero-integrated-source-in-inp-on-bicmos-technology
This paper presents the performance study of a 248 GHz voltage-controlled hetero-integrated signal source using InP-on-BiCMOS technology. The source consists of a Voltage Controlled Oscillator…
Flip-Chip Approach for 500 GHz Broadband Interconnects
/en/research/publications/flip-chip-approach-for-500-ghz-broadband-interconnects
This paper presents the design and characterization of a broadband transition in the range dc to 500 GHz using the flip-chip concept. The extremely wideband performance is attained by optimizations…
Manufacturable Low-Cost Flip-Chip Mounting Technology for 300-500-GHz Assemblies
/en/research/publications/manufacturable-low-cost-flip-chip-mounting-technology-for-300-500-ghz-assemblies
We developed a chip mounting technology suitable for low-cost assemblies in the 300-500-GHz frequency range, compatible with standard chip and submount fabrication techniques. The waveguide and…
Femtosecond semiconductor laser system with resonator-internal dispersion adaptation
/en/research/publications/femtosecond-semiconductor-laser-system-with-resonator-internal-dispersion-adaptation
We present a femtosecond laser diode system that is capable of autonomously adjusting itself to compensate for the external dispersion in an arbitrary application. The laser system contains a spatial…
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
/en/research/publications/recombination-mechanisms-and-thermal-droop-in-algan-based-uv-b-leds
This paper reports a comprehensive analysis of the origin of the electroluminescence (EL) peaks and of the thermal droop in UV-B AlGaN-based LEDs. By carrying out spectral measurements at several…
Concept and numerical simulations of a widely tunable GaAs-based sampled-grating diode laser emitting at 976 nm
/en/research/publications/concept-and-numerical-simulations-of-a-widely-tunable-gaas-based-sampled-grating-diode-laser-emitting-at-976-nm
Tunable diode lasers are essential components in various optical systems. The authors present a concept and simulations of a four-section, widely tunable GaAs-based sampled-grating (SG)…
Terahertz frequency generation with monolithically integrated dual wavelength distributed Bragg reflector semiconductor laser diode
/en/research/publications/terahertz-frequency-generation-with-monolithically-integrated-dual-wavelength-distributed-bragg-reflector-semiconductor-laser-diode
Optoelectronic terahertz (THz) generation techniques have helped to narrow the THz gap and have opened up a wealth of new applications for THz technology. However, the development of THz systems into…
Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes
/en/research/publications/highly-reflective-p-contacts-made-of-pd-al-on-deep-ultraviolet-light-emitting-diodes
Highly reflective metal contacts for the p-layers of AlGaN-based deep ultraviolet light emitting diodes (DUV LEDs) emitting at 305 nm have been investigated. Different Pd-Al metal stacks have…