The focus of our RF Power Lab is on applications with output powers in the range of 10...200 W in the microwave range below 12 GHz. Most projects use FBH packaged GaN HEMT transistors with 0.5 µm gate length. For the integrated power amplifier designs up to X-band we use FBH's 0.25 µm GaN MMIC technology.
A focus is on novel concepts to increase efficiency in broadband modulated power amplifier systems for modern telecommunication signals with high peak-to-average power ratios. In particular, we investigate system types based on load & supply voltage modulation. In addition, we research general issues in RF GaN power transistor technology.