Publications

S. Kanthak, J. Pahl, D. Reiche, and M. Krutzik

Proposal for a Bose–Einstein Condensate Based Test of Born’s Rule Using Light–Pulse Atom Interferometry

Adv. Quantum Technol., early view, 2400436, doi:10.1002/qute.202400436 (2025).

H.-E. Porteanu, I. Stefanović, M. Klute, P. Awakowicz, R.P. Brinkmann and W. Heinrich

Time-resolved measurements of the E–H transition in a microwave driven ICP source

J. Phys. D: Appl. Phys., vol. 58, no. 15, pp. 155206, doi:10.1088/1361-6463/adb9fc (2025).

J.E. Boschker, D. Feise, U. Spengler, P. Ressel, K. Paschke, and A. Knigge

Influence of the Passivation Method on the Performance of 635 nm Ridge Waveguide Lasers

IEEE Photonics J., vol. 17, no. 2, art. 1500904, doi:10.1109/JPHOT.2025.3542598 (2025).

X. Geng, M. Wolf, C. Kuring, N. Wieczorek, O. Hilt, and S. Dieckerhoff

Characteristics and Operation of a Monolithic Bidirectional GaN-on-AlN/SiC Power Transistor Employing Dual-Gate

IEEE Trans. Power Electron., vol. 40, no. 4, pp. 5231-5240 (2025).

P. Crump, A. Boni, M. Elattar, S.K. Khamari, I.P. Marko, S.J. Sweeney, S. Arslan, B. King, Md.J. Miah, D. Martin, A. Knigge, P. Della Casa, and G. Tränkle

Power and Efficiency Scaling of GaAs-Based Edge-Emitting High-Power Diode Lasers

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1502512 (2025).

M. Elattar, M. Hübner, M. Wilkens, A. Ginolas, and P. Crump

Finite-Element Thermal Simulation of High-Power Diode Laser Stacks for High-Duty-Cycle Pump Applications

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1500407 (2025).

F. Mauerhoff, P. Hildenstein, A. Maaßdorf, D. Feise, N. Werner, J. Glaab, G. Blume, and K. Paschke

GaAs Based Edge Emitters at 626 nm, 725 nm and 1180 nm

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1500710 (2025).

H. Christopher, N. Ammouri, M. Beier, J. Fricke, A. Ginolas, J.-P. Koester, A. Liero, A. Maaßdorf, S. Nozinic, H. Wenzel, and A. Knigge

Wavelength-Stabilized Multi-Active Region DBR and DFB Broad-Area and Ridge-Waveguide Lasers for High Peak-Power Pulsed Operation

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1501510 (2025).

M. Radziunas, H. Wenzel, B. King, P. Crump, and E. Kuhn

Dynamical simulations of single-mode lasing in large-area all-semiconductor PCSELs

Opt. Lett., vol. 50, no. 6, pp. 1953-1956 (2025).

O. Fartmann, M. Jutisz, A. Mahdian, V. Schkolnik, I.C. Tietje, C. Zimmermann and M. Krutzik

Ramsey-Bordé atom interferometry with a thermal strontium beam for a compact optical clock

EPJ Quantum Technol., vol. 12, art. 31, doi:10.1140/epjqt/s40507-025-00332-7 (2025).

O. Anton, I. Bröckel, D. Derr, A. Fieguth, M. Franzke, M. Gärtner, E. Giese, J.S. Haase, J. Hamann, A. Heidt, S. Kanthak, C. Klempt, J. Kruse, M. Krutzik, S. Kubitza, C. Lotz, K. Müller, J. Pahl, E.M. Rasel, M. Schiemangk, W.P. Schleich, S. Schwertfeger, A. Wicht and L. Wörner

INTENTAS - an entanglement-enhanced atomic sensor for microgravity

EPJ Quantum Technol., vol. 12, art. 26, doi:10.1140/epjqt/s40507-025-00330-9 (2025).

L. Orphal-Kobin, C.G. Torun, J.M. Bopp, G. Pieplow, and T. Schröder

Coherent Microwave, Optical, and Mechanical Quantum Control of Spin Qubits in Diamond

Adv. Quantum Technol., vol. 8, no. 2: Special Issue: Photonic Quantum Technologies, pp. 2300432, doi:10.1002/qute.202300432 (2025).

A. Wicht, T. Franke, A. Hahn, N. Håkansson, C. Kürbis, R. Smol, T. Hulin, T. Eiband, P. Lehner, M. Mühlbauer, K. Nottensteiner, R. Pietschmann, B. Thaler, D. Thaler, and J. Bosse

Human-Centric Concept for a Reconfigurable Robotic System Enabling Low-Volume Assembly of Photonic and Quantum Modules

IEEE/SICE International Symposium on System Integration (SII 2025), Munich, Germany, Jan. 21-24, ISBN 979-8-3315-3161-4, pp. 1241-1246 (2025).

K. Tetzner, A. Thies, E. Brusaterra, A. Külberg, P. Paul, I. Ostermay, J. Würfl, and O. Hilt

All-implanted lateral β-Ga₂O₃ MOSFET devices realized on semi-insulating (-201) β-Ga₂O₃ substrates

Appl. Phys. Lett., vol. 126, no. 6, pp. 062105, doi:10.1063/5.0253992 (2025).

K.-H. Chang, C.-C. Fan, T.-F. Pan, J.-H. Lai, M.-S. Tsai, A. Boudrioua, C.-M. Lai, H. Yokoyama, E. Higurashi, H. Akiyama, K. Paschke, and L.-H. Peng

Nonlinear beam conversion with multi-spectral components

Opt. Lett., vol. 50, no. 4, pp. 1313-1316 (2025).

S. Michler, Y. Hamdaoui, S. Thapa, G. Schwalb, S. Besendörfer, K. Ziouche, M. Albrecht, F. Brunner, F. Medjdoub, and E. Meissner

Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage

phys. stat. sol. (a), vol. 222, no. 3, pp. 2400544 (2025).

H. Yazdani, P. Beleniotis, F. Brunner, I. Ostermay, J. Würfl, M. Rudolph, W. Heinrich, and O. Hilt

K/Ka-Band–GaN–High-Electron-Mobility Transistors Technology with 700 mS mm^-1 Extrinsic Transconductance

phys. stat. sol. (a), vol. 222, no. 3, pp. 2400592, doi:10.1002/pssa.202400592 (2025).

E. Shabratova, H. Lotfi, A. Sakr, M.A. Hassan, M. Kern, M. Neeb, R. Grüneberger, B. Klemke, G. Marcozzi, K. Kiefer, A. Tsarapkin, K. Höflich, A. Dittwald, A. Denker, J. Anders, J.E. McPeak, K. Lips

Towards an EPR on a Chip Spectrometer for Monitoring Radiation Damage During X‑ray Absorption Spectroscopy

Appl. Magn. Reson., vol. 56, no. 1-2: Special Issue: Celebration of 80 Years of EPR Part II, pp. 103-123, doi:10.1007/s00723-024-01702-7 (2025).

S. Gündoğdu, S. Pazzagli, T. Pregnolato, T. Kolbe, S. Hagedorn, M. Weyers & T. Schröder

AlGaN/AlN heterostructures: an emerging platform for integrated photonics

npj Nanophoton., vol. 2, art. 2, doi:10.1038/s44310-024-00048-z (2025).

H. Wenzel, E. Kuhn, B. King, P. Crump, and M. Radziunas

Theory of the Linewidth–Power Product of Photonic–Crystal Surface–Emitting Lasers

IEEE J. Quantum Electron., vol. 61, no. 1, art. 2400114 (2025).

P. Haas, N. Surkamp, N. Kleemann, H. Christopher, A. Knigge, C. Brenner, M.R. Hofmann

Diode Laser-Based Generation of Mode-Locked Pulses at 1067 Nm (290 fs, 69 W Peak Power)

Electron. Lett., vol. 61, no. 1, pp. e70176, doi:10.1049/ell2.70176 (2025).

S. Wohlfeil, J.-P. Koester, H. Wenzel and A. Knigge

Spatio-temporal modeling and simulation of a mode-locked tapered semiconductor diode laser

New J. Phys., vol. 27 no. 1, pp. 013011, doi:10.1088/1367-2630/ada6f7 (2025).

Z. Galazka, A. Fiedler, A. Popp, P. Seyidov, S. Bin Anooz, R. Blukis, J. Rehm, K. Tetzner, M. Pietsch, A. Dittmar, S. Ganschow, A. Akhtar, T. Remmele, M. Albrecht, T. Schulz, T.-S. Chou, A. Kwasniewski, M. Suendermann, T. Schroeder, and M. Bickermann

Solid-Solution Limits and Thorough Characterization of Bulk β-(Al_xGa_1-x)₂O Single Crystals Grown by the Czochralski Method

Adv. Mater. Interfaces, vol. 12, no. 2: Special Issue: Progresses and Frontiers in Ultrawide Bandgap Semiconductors, pp. 2400122, doi:10.1002/admi.202400122 (2025).

T.-S. Chou, T.T.V. Tran, H. Peelaers, K. Tetzner, O. Hilt, J. Rehm, S. Bin Anooz, A. Fiedler, Z. Galazka, M. Albrecht, and A. Popp

Out-Diffusion and Uphill-Diffusion of Mg in Czochralski-Grown (100) β-Ga₂O₃ Under High-Temperature Annealing and Its Influence on Lateral MOSFET Devices

Adv. Electron. Mater., vol. 11, no. 1 Special Issue: Progresses and Frontiers in Ultrawide Bandgap Semiconductors, pp. 2400342, doi:10.1002/aelm.202400342 (2025).

J. Rass, S. Hagedorn, H.K. Cho, T. Kolbe, M. Guttmann, S. Breuer, J. Ruschel and S. Einfeldt

Influence of the AlN-sapphire template on the optical polarization and efficiency of AlGaN-based far-UVC micro LED arrays

Semicond. Sci. Technol., vol. 40, no.1, pp. 015019, doi:10.1088/1361-6641/ad9fa0 (2025).

C.-F. Wessler, M. Weiland, S. Einfeldt, M. Wiesner-Reinhold, M. Schreiner, S. Neugart

The effect of supplemental LED lighting in the range of UV, blue, and red wavelengths at different ratios on the accumulation of phenolic compounds in pak choi and swiss chard

Food Res. Int., vol. 200, art. 115438, doi:10.1016/j.foodres.2024.115438 (2025).

C. Schulze, W. Heinrich, and O. Bengtsson

Wideband Calibration Methods on a Modified Vector Network Analyzer System

IEEE Microwave Mag., vol. 26, no. 1, pp. 42-50 (2025).