Publications

D. Vitali, A. Chillico, W. Samek, and O. Bengtsson

Improved On-Wafer Probing of High-Frequency Components Based on Optical Recognition of the Probe Positions

IEEE Trans. Microwave Theory Tech., early access, doi:10.1109/TMTT.2025.3557081 (2025).

H.K. Cho, J. Rass, J. Ruschel, I. Ostermay, A. Koyucuoglu, J.E. Boschker, T. Kolbe, and S. Einfeldt

Impact of Dielectric Insulation and Protection Layers on 233 nm Far-UVC LEDs

IEEE Photonics Technol. Lett., vol. 37, no. 15, pp. 829-832 (2025).

N. Ammouri, H. Christopher, A. Maaßdorf, J. Fricke, A. Ginolas, A. Liero, H. Wenzel, A. Knigge and G. Tränkle

420 W pulse power from a 905 nm distributed bragg reflector laser with multiple active regions and tunnel junctions

Phys. Scr., vol. 100, no. 7, pp. 075514, doi:10.1088/1402-4896/adde8e (2025).

S. Kanthak, J. Pahl, D. Reiche, and M. Krutzik

Proposal for a Bose–Einstein Condensate Based Test of Born’s Rule Using Light–Pulse Atom Interferometry

Adv. Quantum Technol., vol. 8, no. 6, pp. 2400436, doi:10.1002/qute.202400436 (2025).

M. Mengozzi, A.M. Angelotti, G.P. Gibiino, C. Schulze, C. Florian, P. Colantonio, O. Bengtsson, and A. Santarelli

Enhancing K-Band Dual-Input Doherty PA Performance by Bayesian Optimization

IEEE Trans. Microwave Theory Tech., vol. 73, no. 6, pp. 3491-3502, doi:10.1109/TMTT.2024.3498451 (2025).

C. Mourikis, G. Blume, K. Paschke, and G. Tränkle

Laser emission at 253.7 nm using a LaBGeO₅ and a Mg:LiTaO₃ crystal seeded by a 761.1 nm diode laser module

Appl. Opt., vol. 64, no. 18, pp. 4969-4974 (2025).

C. Garcion, S.S. Gill, M. Misslisch, A. Heidt, I. Papadakis, B. Piest, V. Schkolnik, T. Wendrich, A. Prat, K. Bleeke, H. Müntinga, M. Krutzik, S.-W. Chiow, N. Yu, C. Lotz, N. Gaaloul and E.M. Rasel

Dark energy search by atom interferometry in the Einstein-elevator

EPJ Quantum Technol., vol. 12, art. 65, doi:10.1140/epjqt/s40507-025-00371-0 (2025).

I. Prozheev, R. Bès, I. Makkonen, F. Mehnke, M. Schilling, T. Wernicke, M. Kneissl & F. Tuomisto

Short-range order controlled amphoteric behavior of the Si dopant in Al-rich AlGaN

Nat. Commun., vol. 16, art. 5005, doi:10.1038/s41467-025-60312-4 (2025).

C. Schulze, W. Heinrich, O. Bengtsson

Fast Optimization of RF Power Transistors with mmWave Active Load-Pull Techniques

International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC 2025), Torino, Italy, Apr. 10-11, ISBN 979-8-3315-1960-5 (2025).

A. Chillico, D. Vitali, W. Samek, O. Bengtsson

Automated On-Wafer Radio-Frequency Transistor Characterization with Adaptive Probing and Features Extraction with Uncertainties

International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC 2025), Torino, Italy, Apr. 10-11, ISBN 979-8-3315-1960-5 (2025).

V. Leitgeb, B. Kosednar-Legenstein, L. Mitterhuber, F. Brunner, E. Bahat-Treidel, E. Kraker

Stress and Crystal Quality Analysis of GaN Layers on Cost-Effective Substrates for Vertical High- Power Applications

26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2025), Utrecht, Netherlands, Apr. 6-9, ISBN 979-8-3503-9300-2 (2025).

D.G. Hellmich, S. Nozinic, E. Dischke, D. Sun, A. Rämer, W. Heinrich, V. Krozer

60 GHz Radio Transceiver System for Energy Efficient Communication Systems

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 72-75 (2025).

H. Yacoub, C. Mangiavillano, M. Rausch, E. Dischke, W. Heinrich, P. Scheele

InP-HBT MMIC for RF Applications: Technology Roadmap and Heterointegration

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 366-367 (2025).

A. Rämer, E. Negri, E. Dischke, S. Chevtchenko, H. Yazdani, V. Krozer, W. Heinrich

Monolithically integrated W-band detector with adjustable sensitivity

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 431-434 (2025).

P. Manchanda, M. Knaack, F. Tost, C. Andrei, M. Rudolph

Digitally Reconfigurable Power Detector

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 439-442 (2025).

P. Beleniotis, C. Andrei, U.L. Rohde, M. Rudolph

Determining GaN HEMT Trap Models from MHz Load-line Measurement — Synthesis and Evaluation

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 451-454 (2025).

K.K. Tiwari, T. Flisgen, W. Heinrich, G. Caire

Array-Fed RIS: Validation of Friis-Based Modeling Using Full-Wave Simulations

16th German Microwave Conference (GeMiC 2025), Dresden, Germany, Mar. 17-19, ISBN 978-3-9820397-4-9, pp. 611-614 (2025).

A. Rumiantsev, R. Doerner

Method of Estimating RF Probe-Tip Calibration Reproducibility Budget on Commercial Calibration Substrates

104th ARFTG Microwave Measurement Conference (ARFTG 2025), San Juan, USA, Jan. 19-22, ISBN 979-8-3503-6838-3 (2025).

F.A. Mubarak, G.N. Phung, U. Arz, K. Haddadi, I. Roch-Jeune, G. Ducournau, T. Flisgen, R. Doerner, D. Allal, D. Jayasankar, J. Stake, R. Schmidt, G. Fisher, N.M. Ridler, and X. Shang

An Interlaboratory Comparison of On-Wafer S-Parameter Measurements up to 1.1 THz

IEEE Trans. Terahertz Sci. Technol., vol. 15, no. 3, pp. 344-358, doi:10.1109/TTHZ.2025.3537461 (2025).

Md. J. Miah, A. Boni, D. Martin, A. Ginolas, M. Elattar, P. Della Casa, S. Grützner, S. Strohmaier, A. Knigge, G. Tränkle, and P. Crump

Thermal Lens Manipulation Using Edge-Heaters in Laser Bars for Improved Efficiency and Divergence

IEEE Photonics Technol. Lett., vol. 37, no. 9, pp. 545-548 (2025).

T. Tenzler, J.-P. Koester and H. Wenzel

Theoretical study of Bragg reflection waveguide laser structures with surface gratings for spontaneous parametric down conversion

Phys. Scr., vol. 100, no. 5, pp. 055105, doi:10.1088/1402-4896/adc347 (2025).

N. Roccato, F. Piva, M. Buffolo, C. De Santi, N. Trivellin, M. Schilling, A. Muhin, J. Höpfner, M. Guttmann, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni & M. Meneghini

Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs

Sci. Rep., vol. 15, art. 13483, doi:10.1038/s41598-025-95015-9 (2025).

M. Schilling, C. Hartmann, M. Guttmann, U. Juda, A. Muhin, J. Höpfner, T. Wernicke, T. Straubinger, and M. Kneissl

Light Extraction and External Quantum Efficiency of 235 nm Far–Ultraviolet-C Light-Emitting Diodes on Single-Crystal AlN Substrates

phys. stat. sol. (a), vol. 222, no. 8, pp. 2400812, doi:10.1002/pssa.202400812 (2025).

H. Yazdani, C. Zervos, P. Beleniotis, E. Brusaterra, O. Hilt, M. Rudolph, and J. Würfl

Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps-Induced Drain Lag

phys. stat. sol. (a), vol. 222, no. 8, pp. 2300885, doi:10.1002/pssa.202300885 (2025).

H.-E. Porteanu, I. Stefanović, M. Klute, P. Awakowicz, R.-P. Brinkmann, and W. Heinrich

Time-Resolved Investigations of the Capacitive to Inductive Transition in a Microwave-Driven Plasma Source

IEEE Trans. Plasma Sci., vol. 53, no. 4, pp. 571-578 (2025).

M.R. Mahani, I.A. Nechepurenko, T. Flisgen, A. Wicht

Combining Bayesian Optimization, Singular Value Decomposition, and Machine Learning for Advanced Optical Design

ACS Photonics, vol. 12, no. 4, pp. 1812–1821, doi:10.1021/acsphotonics.4c02157 (2025).

A. Abdalla, M. Abe, S. Abend, M. Abidi, M. Aidelsburger, ..., M. Krutzik, ..., M. Zarei, M. Zhan, S. Zhang, L. Zhou and E. Zupanič

Terrestrial Very-Long-Baseline Atom Interferometry: summary of the second workshop

EPJ Quantum Technol., vol. 12, art. 42, doi:10.1140/epjqt/s40507-025-00344-3 (2025).

E. Brusaterra, E. Bahat Treidel, L. Deriks, S. Danylyuk, E. Brandl, J. Bravin, M. Pawlak, A. Külberg, M. Schiersch, A. Thies, and O. Hilt

Vertical GaN-on-Tungsten High Voltage pn-Diodes From Sapphire-Grown GaN Membranes

IEEE Electron Device Lett., vol. 46, no. 4, pp. 564-567 (2025).

M. Schilling, J. Ruschel, H.K. Cho, J. Rass, J. Höpfner, T. Wernicke, S. Einfeldt and M. Kneissl

Effect of quantum well number on the efficiency and degradation of AlGaN-based far-UVC LEDs emitting at 233 nm and 226 nm

Semicond. Sci. Technol., vol. 40, no. 4, pp. 045004, doi:10.1088/1361-6641/adbf40 (2025).

H.-E. Porteanu, I. Stefanović, M. Klute, P. Awakowicz, R.P. Brinkmann and W. Heinrich

Time-resolved measurements of the E–H transition in a microwave driven ICP source

J. Phys. D: Appl. Phys., vol. 58, no. 15, pp. 155206, doi:10.1088/1361-6463/adb9fc (2025).

J.E. Boschker, D. Feise, U. Spengler, P. Ressel, K. Paschke, and A. Knigge

Influence of the Passivation Method on the Performance of 635 nm Ridge Waveguide Lasers

IEEE Photonics J., vol. 17, no. 2, art. 1500904, doi:10.1109/JPHOT.2025.3542598 (2025).

X. Geng, M. Wolf, C. Kuring, N. Wieczorek, O. Hilt, and S. Dieckerhoff

Characteristics and Operation of a Monolithic Bidirectional GaN-on-AlN/SiC Power Transistor Employing Dual-Gate

IEEE Trans. Power Electron., vol. 40, no. 4, pp. 5231-5240 (2025).

M.R. Mahani, I.A. Nechepurenko, Y. Rahimof, and A. Wicht

Frequency shift detection mechanism in GaAs waveguides with mode-coupled Bragg gratings

Opt. Express, vol. 33, no. 6, pp. 13519-13529, doi:10.1364/OE.557803 (2025).

K. Sowoidnich, A. Müller, K. Rudisch, K. Pufahl, V. Regir, B. Sumpf, M. Maiwald

Shifted excitation Raman difference spectroscopy: a potential tool for a sustainable recycling industry

Proc. of SPIE, vol. 13337, Plasmonics in Biology and Medicine XXII, Photonics West, San Francisco, USA, Jan 17-22, 1333705 (2025).

P. Crump and W.E. Fenwick

Performance scaling of high-power diode laser pumps for fusion applications

Proc. of SPIE, vol. 13343, High Power Lasers for Fusion Research VIII, Photonics West, San Francisco, USA, Jan 17-22, 133430C (2025).

F. Mauerhoff, O. Senel, D. Feise, A. Sahm, T. Schröder, K. Paschke

Miniaturized wavelength stabilized laser module emitting at 619nm

Proc. of SPIE, vol. 13344, Components and Packaging for Laser Systems XI, Photonics West, San Francisco, USA, Jan 17-22, 133440I (2025).

N. Werner, S.-A. Seeger, F. Mauerhoff, P. Hildenstein, A. Maaßdorf, G. Blume, D. Feise, A. Sahm, J. Zender, L. Wittenbecher, H. Wenzel, K. Paschke

High-power semiconductor laser systems at 720nm: tailored laser light delivery for quantum technologies

Proc. of SPIE, vol. 13345, High-Power Diode Laser Technology XXIII, Photonics West, San Francisco, USA, Jan 17-22, 1334505 (2025).

M. Elattar, H. Wenzel, J. Fricke, P. Della Casa, S. Kreutzmann, A. Knigge, A. Pietrzak, C.-L. Jiang, X. Liu, A. Amtout, S.D. McDougall, and P. Crump

Monolithic DBR broad-area diode lasers with high conversion efficiency in the 87x–88xnm wavelength range

Proc. of SPIE, vol. 13345, High-Power Diode Laser Technology XXIII, Photonics West, San Francisco, USA, Jan 17-22, 1334507 (2025).

M. Hübner, S. Arslan, L. Wittenbecher, J. Zender, B. Eppich, D. Martin, P. Della Casa, A. Ginolas, P.S. Basler, N. Lobo-Ploch, P. Crump, M. Rozycki, A. Schultze, U. Tradowsky, A. Knaub, H. Alder

Compact 1 kW diode laser process head emitting at 780 nm for the efficient direct additive manufacturing of aluminum

Proc. of SPIE, vol. 13345, High-Power Diode Laser Technology XXIII, Photonics West, San Francisco, USA, Jan 17-22, 133450U (2025).

M. Maiwald, K. Sowoidnich, A. Müller, B. Sumpf

Shifted Excitation Raman Difference Spectroscopy for the Analysis of Milk and Dairy Products

Proc. of SPIE, vol. 13357, Photonic Technologies in Plant and Agricultural Science II, Photonics West, San Francisco, USA, Jan 17-22, 1335704 (2025).

M. Buffolo, F. Piva, N. Roccato, C. De Santi, T. Wernicke, J. Höpfner, M. Schilling, A. Muhin, N. Susilo, D. Hauer-Vidal, L. Sulmoni, M. Kneissl, N. Trivellin, G. Meneghesso, E. Zanoni, M. Meneghini

Defects and reliability of UVC-LEDs

Proc. of SPIE, vol. 13366, Gallium Nitride Materials and Devices XX, Photonics West, San Francisco, USA, Jan 17-22, 133660G (2025).

A. Müller, R. Busch, K. Sowoidnich, L.S. Theurer, J.-P. Koester, M. Maiwald, A. Knigge, B. Sumpf

830 nm multimode interference coupler-based dual-wavelength master oscillator power amplifier for spectroscopic applications

Proc. of SPIE, vol. 13385, Novel In-Plane Semiconductor Lasers XXIV, Photonics West, San Francisco, USA, Jan 17-22, 133850A (2025).

L.S. Theurer, J.-P. Koester, A. Müller, M. Maiwald, A. Knigge, B. Sumpf, G. Tränkle

Quantification of losses in bent waveguide distributed Bragg reflector diode lasers at 785 nm

Proc. of SPIE, vol. 13385, Novel In-Plane Semiconductor Lasers XXIV, Photonics West, San Francisco, USA, Jan 17-22, 133850C (2025).

K. Paschke, N. Werner, S.-A. Seeger, D. Feise, P. Della Casa, R.-St. Unger, S. Kreutzmann, A. Sahm, G. Blume

Wavelength tunable tapered diode lasers at 1180 nm with high spectral radiance

Proc. of SPIE, vol. 13385, Novel In-Plane Semiconductor Lasers XXIV, San Francisco, USA, Jan 17-22, 133850G (2025).

B. King, H. Wenzel, E. Kuhn, M. Radziunas, and P. Crump

Design study on large-area all-semiconductor PCSELs

Proc. of SPIE, vol. 13385, Novel In-Plane Semiconductor Lasers XXIV, Photonics West, San Francisco, USA, Jan 17-22, 133850I (2025).

P. Crump, A. Boni, M. Elattar, S. Khamari, I.P. Marko, S.J. Sweeney, S. Arslan, B. King, M.J. Miah, D. Martin, A. Knigge, P. Della Casa, G. Tränkle

Experimental studies of GaAs-based broad area diode lasers using highly asymmetric epitaxial structures with high modal gain: finding a path to exceeding 80% conversion efficiency at 25°C

Proc. of SPIE, vol. PC13385, Novel In-Plane Semiconductor Lasers XXIV, Photonics West, San Francisco, USA, Jan 17-22, PC133850V (2025).

C. De Santi, F. Piva, M. Buffolo, N. Roccato, M. Pilati, S. Longato, N. Susilo, D. Hauer Vidal, A. Muhin, L. Sulmoni, T. Wernicke, M. Kneissl, N. Trivellin, G. Meneghesso, E. Zanoni, M. Meneghini

Spectral components, initial improvement and degradation of 265 nm UV-C LEDs

Proc. of SPIE, vol. 13386, Light-Emitting Devices, Materials, and Applications XXIX, Photonics West, San Francisco, USA, Jan 17-22, 1338608 (2025).

J. Hamperl, M. Gärtner, N. Goossen-Schmidt, B. Arar, M. Bursy, S. Hariharan, S. Kubitza, A. Liero, S. Nozinic, M. Schiemangk, S. Szermer, C. Tyborski, and A. Wicht

Micro-integrated laser distribution modules for low-SWaP optical atomic clocks

Proc. of SPIE, vol. 13392, Quantum Sensing, Imaging, and Precision Metrology III, Photonics West, San Francisco, USA, Jan 17-22, 133920E (2025).

G. Blume, D. Feise, A. Sahm, P. Hildenstein, N. Werner, J. Zender, F. Wendt, F. Gewers, E. Pearce, S. Ramelow, K. Paschke

Long wavelength, small quantum interferometer module: shrinking MIR OCT systems via quantum entanglement

Proc. of SPIE, vol. 13392, Quantum Sensing, Imaging, and Precision Metrology III, Photonics West, San Francisco, USA, Jan 17-22, 133920V (2025).

P. Hildenstein, G. Blume, A. Sahm, N. Werner, D. Feise, A. Sherwani, E. Pearce, B. Kemper, Á. Barroso, J. Schnekenburger, S. Ramelow, K. Paschke

Efficient MIR sensing with undetected photons: high brightness, miniaturized SPDC module for real world applications

Proc. of SPIE, vol. 13392, Quantum Sensing, Imaging, and Precision Metrology III, Photonics West, San Francisco, USA, Jan 17-22, 133921B (2025).

P. Crump, L. Mawst, S. Mcdougall, S. Noda, S. Reitzenstein, S. Sweeney, E. Tournie, Y. Wan

Editorial

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1502512 (2025).

P. Crump, A. Boni, M. Elattar, S.K. Khamari, I.P. Marko, S.J. Sweeney, S. Arslan, B. King, Md.J. Miah, D. Martin, A. Knigge, P. Della Casa, and G. Tränkle

Power and Efficiency Scaling of GaAs-Based Edge-Emitting High-Power Diode Lasers

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1502512 (2025).

M. Elattar, M. Hübner, M. Wilkens, A. Ginolas, and P. Crump

Finite-Element Thermal Simulation of High-Power Diode Laser Stacks for High-Duty-Cycle Pump Applications

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1500407 (2025).

F. Mauerhoff, P. Hildenstein, A. Maaßdorf, D. Feise, N. Werner, J. Glaab, G. Blume, and K. Paschke

GaAs Based Edge Emitters at 626 nm, 725 nm and 1180 nm

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1500710 (2025).

H. Christopher, N. Ammouri, M. Beier, J. Fricke, A. Ginolas, J.-P. Koester, A. Liero, A. Maaßdorf, S. Nozinic, H. Wenzel, and A. Knigge

Wavelength-Stabilized Multi-Active Region DBR and DFB Broad-Area and Ridge-Waveguide Lasers for High Peak-Power Pulsed Operation

IEEE J. Sel. Top. Quantum Electron., vol. 31, no. 2: Pwr. and Effic. Scaling in Semiconductor Lasers, art. 1501510 (2025).

B. Stray, X. Bosch-Lluis, R. Thompson, C. Okino, N. Yu, N. Lay, B. Muirhead, J. Hyon, H. Leopardi, P. Brereton, A. Mylapore, B. Loomis, S. Luthcke, P. Ghuman, S. Bettadpur, M.D. Lachmann, T. Stolz, C. Kuehl, D. Weise, H. Ahlers, C. Schubert, A. Bawamia and S.-W. Chiow

Quantum gravity gradiometry for future mass change science

EPJ Quantum Technol., vol. 12, art. 35, doi:10.1140/epjqt/s40507-025-00338-1 (2025).

M. Radziunas, H. Wenzel, B. King, P. Crump, and E. Kuhn

Dynamical simulations of single-mode lasing in large-area all-semiconductor PCSELs

Opt. Lett., vol. 50, no. 6, pp. 1953-1956 (2025).

O. Fartmann, M. Jutisz, A. Mahdian, V. Schkolnik, I.C. Tietje, C. Zimmermann and M. Krutzik

Ramsey-Bordé atom interferometry with a thermal strontium beam for a compact optical clock

EPJ Quantum Technol., vol. 12, art. 31, doi:10.1140/epjqt/s40507-025-00332-7 (2025).

O. Anton, I. Bröckel, D. Derr, A. Fieguth, M. Franzke, M. Gärtner, E. Giese, J.S. Haase, J. Hamann, A. Heidt, S. Kanthak, C. Klempt, J. Kruse, M. Krutzik, S. Kubitza, C. Lotz, K. Müller, J. Pahl, E.M. Rasel, M. Schiemangk, W.P. Schleich, S. Schwertfeger, A. Wicht and L. Wörner

INTENTAS - an entanglement-enhanced atomic sensor for microgravity

EPJ Quantum Technol., vol. 12, art. 26, doi:10.1140/epjqt/s40507-025-00330-9 (2025).

L. Orphal-Kobin, C.G. Torun, J.M. Bopp, G. Pieplow, and T. Schröder

Coherent Microwave, Optical, and Mechanical Quantum Control of Spin Qubits in Diamond

Adv. Quantum Technol., vol. 8, no. 2: Special Issue: Photonic Quantum Technologies, pp. 2300432, doi:10.1002/qute.202300432 (2025).

A. Wicht, T. Franke, A. Hahn, N. Håkansson, C. Kürbis, R. Smol, T. Hulin, T. Eiband, P. Lehner, M. Mühlbauer, K. Nottensteiner, R. Pietschmann, B. Thaler, D. Thaler, and J. Bosse

Human-Centric Concept for a Reconfigurable Robotic System Enabling Low-Volume Assembly of Photonic and Quantum Modules

IEEE/SICE International Symposium on System Integration (SII 2025), Munich, Germany, Jan. 21-24, ISBN 979-8-3315-3161-4, pp. 1241-1246 (2025).

K. Tetzner, A. Thies, E. Brusaterra, A. Külberg, P. Paul, I. Ostermay, J. Würfl, and O. Hilt

All-implanted lateral β-Ga₂O₃ MOSFET devices realized on semi-insulating (-201) β-Ga₂O₃ substrates

Appl. Phys. Lett., vol. 126, no. 6, pp. 062105, doi:10.1063/5.0253992 (2025).

K.-H. Chang, C.-C. Fan, T.-F. Pan, J.-H. Lai, M.-S. Tsai, A. Boudrioua, C.-M. Lai, H. Yokoyama, E. Higurashi, H. Akiyama, K. Paschke, and L.-H. Peng

Nonlinear beam conversion with multi-spectral components

Opt. Lett., vol. 50, no. 4, pp. 1313-1316 (2025).

S. Michler, Y. Hamdaoui, S. Thapa, G. Schwalb, S. Besendörfer, K. Ziouche, M. Albrecht, F. Brunner, F. Medjdoub, and E. Meissner

Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage

phys. stat. sol. (a), vol. 222, no. 3, pp. 2400544 (2025).

H. Yazdani, P. Beleniotis, F. Brunner, I. Ostermay, J. Würfl, M. Rudolph, W. Heinrich, and O. Hilt

K/Ka-Band–GaN–High-Electron-Mobility Transistors Technology with 700 mS mm^-1 Extrinsic Transconductance

phys. stat. sol. (a), vol. 222, no. 3, pp. 2400592, doi:10.1002/pssa.202400592 (2025).

E. Shabratova, H. Lotfi, A. Sakr, M.A. Hassan, M. Kern, M. Neeb, R. Grüneberger, B. Klemke, G. Marcozzi, K. Kiefer, A. Tsarapkin, K. Höflich, A. Dittwald, A. Denker, J. Anders, J.E. McPeak, K. Lips

Towards an EPR on a Chip Spectrometer for Monitoring Radiation Damage During X‑ray Absorption Spectroscopy

Appl. Magn. Reson., vol. 56, no. 1-2: Special Issue: Celebration of 80 Years of EPR Part II, pp. 103-123, doi:10.1007/s00723-024-01702-7 (2025).

S. Gündoğdu, S. Pazzagli, T. Pregnolato, T. Kolbe, S. Hagedorn, M. Weyers & T. Schröder

AlGaN/AlN heterostructures: an emerging platform for integrated photonics

npj Nanophoton., vol. 2, art. 2, doi:10.1038/s44310-024-00048-z (2025).

H. Wenzel, E. Kuhn, B. King, P. Crump, and M. Radziunas

Theory of the Linewidth–Power Product of Photonic–Crystal Surface–Emitting Lasers

IEEE J. Quantum Electron., vol. 61, no. 1, art. 2400114 (2025).

P. Haas, N. Surkamp, N. Kleemann, H. Christopher, A. Knigge, C. Brenner, M.R. Hofmann

Diode Laser-Based Generation of Mode-Locked Pulses at 1067 Nm (290 fs, 69 W Peak Power)

Electron. Lett., vol. 61, no. 1, pp. e70176, doi:10.1049/ell2.70176 (2025).

S. Wohlfeil, J.-P. Koester, H. Wenzel and A. Knigge

Spatio-temporal modeling and simulation of a mode-locked tapered semiconductor diode laser

New J. Phys., vol. 27 no. 1, pp. 013011, doi:10.1088/1367-2630/ada6f7 (2025).

Z. Galazka, A. Fiedler, A. Popp, P. Seyidov, S. Bin Anooz, R. Blukis, J. Rehm, K. Tetzner, M. Pietsch, A. Dittmar, S. Ganschow, A. Akhtar, T. Remmele, M. Albrecht, T. Schulz, T.-S. Chou, A. Kwasniewski, M. Suendermann, T. Schroeder, and M. Bickermann

Solid-Solution Limits and Thorough Characterization of Bulk β-(Al_xGa_1-x)₂O Single Crystals Grown by the Czochralski Method

Adv. Mater. Interfaces, vol. 12, no. 2: Special Issue: Progresses and Frontiers in Ultrawide Bandgap Semiconductors, pp. 2400122, doi:10.1002/admi.202400122 (2025).

T.-S. Chou, T.T.V. Tran, H. Peelaers, K. Tetzner, O. Hilt, J. Rehm, S. Bin Anooz, A. Fiedler, Z. Galazka, M. Albrecht, and A. Popp

Out-Diffusion and Uphill-Diffusion of Mg in Czochralski-Grown (100) β-Ga₂O₃ Under High-Temperature Annealing and Its Influence on Lateral MOSFET Devices

Adv. Electron. Mater., vol. 11, no. 1 Special Issue: Progresses and Frontiers in Ultrawide Bandgap Semiconductors, pp. 2400342, doi:10.1002/aelm.202400342 (2025).

M. Jutisz, A. Erl, J. Wolters, M. Gündoğan, and M. Krutzik

Stand-alone mobile quantum memory system

Phys. Rev. Applied, vol. 23, no. 2, pp. 024045, doi:10.1103/PhysRevApplied.23.024045 (2025).

A. Ahmadi, Y. Murat, Ö.E. Müstecaplıoğlu, P.-C. Kuan, M. Gündoğan and M. Krutzik

Concept for motion sensing using atomic optical memories

Research Directions: Quantum Technologies, vol. 3, art. e2, doi:10.1017/qut.2024.7 (2025).

J. Rass, S. Hagedorn, H.K. Cho, T. Kolbe, M. Guttmann, S. Breuer, J. Ruschel and S. Einfeldt

Influence of the AlN-sapphire template on the optical polarization and efficiency of AlGaN-based far-UVC micro LED arrays

Semicond. Sci. Technol., vol. 40, no.1, pp. 015019, doi:10.1088/1361-6641/ad9fa0 (2025).

C.-F. Wessler, M. Weiland, S. Einfeldt, M. Wiesner-Reinhold, M. Schreiner, S. Neugart

The effect of supplemental LED lighting in the range of UV, blue, and red wavelengths at different ratios on the accumulation of phenolic compounds in pak choi and swiss chard

Food Res. Int., vol. 200, art. 115438, doi:10.1016/j.foodres.2024.115438 (2025).

C. Schulze, W. Heinrich, and O. Bengtsson

Wideband Calibration Methods on a Modified Vector Network Analyzer System

IEEE Microwave Mag., vol. 26, no. 1, pp. 42-50 (2025).

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