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Patents

Study of in-depth strain variation in ion-irradiated GaN

M. Herms1, U. Zeimer1, G. Sonia1, F. Brunner1, E. Richter1, M. Weyers1, G. Tränkle1, T. Behm2, G. Irmer2, G. Pensl3, A. Denker4, J. Opitz-Coutureau4

Published in:

J. Mater. Sci. - Mater. Electron., vol. 19, no. 1, pp. 68-72 (2008).

Abstract:

The strain state of (0001) GaN layers grown on 4H-SiC by Metal Organic Vapour Phase Epitaxy (MOVPE) and its change upon ion irradiation was studied by Raman microscopy (RM) and X-ray diffraction (XRD). The layers were irradiated with light (H, C, O) and heavy (Fe, Kr) ions at high (68 and 120 MeV) and low (2 MeV) energies in order to simulate the situation in space. The in-depth profiles of the E2H phonon frequency of the layers recorded across the cleaved edge show a pronounced gradient between surface and interface. Taking the in-plane strain data calculated from XRD into account, the layers are generally tensile-strained but nearly strain-compensated at the interface. This is in line with the strain development during the growth process as measured by the wafer curvature. The E2H frequencies and their gradient over the layer thickness are not significantly changed by irradiation with high-energy ions. Small changes are seen for layers irradiated with heavy low-energy ions that penetrate into the layer only a few microns. Consequently, GaN can be considered as hard against space-like ion irradiation in view of change of the strain state.

1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Institute for Theoretical Physics, Technical University Bergakademie Freiberg, 09596 Freiberg, Germany
3 Institute for Applied Physics, University Erlangen-Nürnberg, 91058 Erlangen, Germany
4 Ionenstrahllabor, Hahn-Meitner-Institut, Glienicker Str. 100, 14109 Berlin, Germany

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