Integrated circuits are designed relying on simulation software and cannot be tuned after being fabricated. The accuracy of the simulation software is therefore crucial for successful MMIC design. Transistor models are most decisive for simulation accuracy, as they are the mathematical description of the electrical and thermal transistor behavior. Since the FBH’s core research field is semiconductor technology, transistor modeling is a continuous challenge.
Models are developed for all processes of the FBH foundry, for InP-transfer substrate HBT as well as for GaN-HEMT devices. Since different applications require different models, we characterize small-signal, noise, and large-signal performance of our devices. Advanced transistors frequently cannot be described through previously published models or even models available in commercial circuit simulators. Examples for the outcome of our research are the FBH-HBT model that is currently used for the InP-HBTs, models for white and 1/f noise of HBT as well as a nonlinear noise model for GaN HEMTs, and a model for packaged transistors.
Current research activities:
- physics-based modelling of GaN HEMTs
- high-frequent switching behavior of GaN HEMTs and InP HBTs
- AlN HEMTs and strained GaN technology
The research regarding transistor modeling is performed in cooperation with the Brandenburg Technical University BTU Cottbus-Senftenberg, department Fachgebiet Hochfrequenz- und Mikrowellentechnik, Ulrich-L.-Rohde Stiftungsprofessur, within the Joint Lab BTU-CS - FBH Microwave.
DFG material aid
Cooperation project with Prof. Ingmar Kallfass, University Stuttgart, and Prof. Dan Ritter, Technion, Israel Institute of Technology, Haifa
BMBF-funded project focusing on innovative power transistors based on the new materialsystem aluminium-nitride - ForMikro-LeitBAN (in German)