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A G-Band High Power Frequency Doubler in Transferred-Substrate InP HBT Technology
/en/research/publications/a-g-band-high-power-frequency-doubler-in-transferred-substrate-inp-hbt-technology
This letter presents a G-band balanced frequency doubler with high output power, realized using a 800 nm transferred-substrate InP-HBT process. The doubler delivers…
SciFab - a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications
/en/research/publications/scifab-a-wafer-level-heterointegrated-inp-dhbtsige-bicmos-foundry-process-for-mm-wave-applications
We present a wafer-level heterointegrated indium phosphide double heterobipolar transistor on silicon germanium bipolar-complementary metal oxide semiconductor (InP DHBT on SiGe BiCMOS) process which…
Injection Current Dependent Single-Mode Fiber Coupling of a DBR Tapered Diode Laser Beam
/en/research/publications/injection-current-dependent-single-mode-fiber-coupling-of-a-dbr-tapered-diode-laser-beam
In this work, we investigate experimentally the influence of injection current induced beam astigmatism change in a distributed Bragg reflector (DBR) tapered diode laser on launching of its nearly…
Miniaturized diode laser module emitting green light at 532 nm with a power of more than 900 mW for next-generation holographic displays
/en/research/publications/miniaturized-diode-laser-module-emitting-green-light-at-532nbspnm-with-a-power-of-more-than-900nbspmw-for-next-generation-holographic-displays
We present a micro-integrated laser module based on an amplified diode laser and second harmonic generation which is a promising candidate for a green light source in next-generation 3D holographic…
Watt-level red-emitting diode lasers and modules for display applications
/en/research/publications/watt-level-red-emitting-diode-lasers-and-modules-for-display-applications
Red-emitting lasers for display applications require high output powers and a high visibility. We demonstrate diode lasers and modules in the red spectral range based on AlGaInP with optical output…
Reconfigurable package integrated 20W RF power GaN HEMT with discrete thick-film MIM BST varactors
/en/research/publications/reconfigurable-package-integrated-20w-rf-power-gan-hemt-with-discrete-thick-film-mim-bst-varactors
A novel package integrated solution for gallium nitride high-electron-mobility transistors with an electronically two-dimensional reconfigurable L-section matching network is presented. Thick-film…
A Novel Model for Digital Predistortion of Discrete Level Supply-Modulated RF Power Amplifiers
/en/research/publications/a-novel-model-for-digital-predistortion-of-discrete-level-supply-modulated-rf-power-amplifiers
The linearization of a discrete level supplymodulated RF power amplifier using digital predistortion (DPD) is investigated. The characteristics of the system are evaluated and a novel DPD model,…
High duty cycle, highly efficient fiber coupled 940-nm pump module for high-energy solid-state lasers
/en/research/publications/high-duty-cycle-highly-efficient-fiber-coupled-940-nm-pump-module-for-high-energy-solid-state-lasers
Tailored diode laser single emitters with long (6 mm) resonators and wide (1.2 mm) emission apertures that operate with 940 nm emission wavelength were assembled in novel edge-cooled…
Rear-side resonator architecture for the passive coherent combining of high-brightness laser diodes
/en/research/publications/rear-side-resonator-architecture-for-the-passive-coherent-combining-of-high-brightness-laser-diodes
We describe a new coherent beam combining architecture based on passive phase locking of emitters in an extended cavity on the rear facet and their coherent combination on the front facet. This…
Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg
/en/research/publications/impact-of-acceptor-concentration-on-the-resistivity-of-niau-p-contacts-on-semipolar-20-21-ganmg
The p-type doping of GaN with Mg, in particular doping of p++ cap layers and its influence on the resistivity of Ni/Au contacts on semipolar (20-21) GaN, has been investigated. For this purpose, we…