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24-wavelength distributed Bragg reflector laser array with surface gratings
/en/research/publications/24-wavelength-distributed-bragg-reflector-laser-array-with-surface-gratings
A small footprint diode laser array of 24 individually addressable distributed Bragg reflector lasers is presented. Third-order gratings etched into the surface of an AlGaAs vertical waveguide…
High Beam Quality in Broad Area Lasers via Suppression of Lateral Carrier Accumulation
/en/research/publications/high-beam-quality-in-broad-area-lasers-via-suppression-of-lateral-carrier-accumulation
High power 9xx-nm broad-area lasers with improved beam quality are required for many applications, but the physical limitations remain unclear, especially the relative importance of free-carrier and…
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
/en/research/publications/spatial-clustering-of-defect-luminescence-centers-in-si-doped-low-resistivity-al082ga018n
A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to…
Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation
/en/research/publications/index-antiguiding-in-narrow-ridge-gan-based-laser-diodes-investigated-by-measurements-of-the-current-dependent-gain-and-index-spectra-and-by-self-consistent-simulation
The threshold current density of narrow (1.5 µm) ridge-waveguide InGaN multi-quantum-well laser diodes and the shape of their lateral far-field patterns strongly depend on the etch depth of the…
Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature
/en/research/publications/degradation-of-inalgan-based-uv-b-light-emitting-diodes-stressed-by-current-and-temperature
The degradation of the electrical and optical properties of (InAlGa)N-based multiple quantum well light emitting diodes (LEDs) emitting near 308 nm under different stress conditions has been…
Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive
/en/research/publications/dynamic-behaviour-of-a-low-noise-amplifier-gan-mmic-under-input-power-overdrive
This paper presents the analysis of a highly robust low-noise amplifier subjected to high input power stress conditions. The LNA is realized in coplanar technology using the 0.25µm GaN-HEMT MMIC…
A 250 GHz Hetero-Integrated VCO with 0.7 mW Output Power in InP-on-BiCMOS Technology
/en/research/publications/a-250-ghz-hetero-integrated-vco-with-07nbspmw-output-power-in-inp-on-bicmos-technology
This paper presents a 250 GHz hetero-integrated VCO using InP-on-BiCMOS technology. It consists of a singleended Colpitts Voltage Controlled Oscillator (VCO) in 0.25 µm SiGe-BiCMOS…
Optimized Method for Achieving Accurate Signals for "True-Mode" S-Parameter Measurements
/en/research/publications/optimized-method-for-achieving-accurate-signals-for-quottrue-modequot-s-parameter-measurements
Due to the capabilities of modern vector network analyzers (VNAs), the usage of "True-Mode"-signals for characterizing and testing active differential devices is quite convenient.…
Design of a Triband Lumped Element Filter for Digital Microwave Power Amplifiers
/en/research/publications/design-of-a-triband-lumped-element-filter-for-digital-microwave-power-amplifiers
In this paper, a compact lumped element triband reconstruction filter for digital microwave power amplifier (PA) applications in the 0.8, 1.8 and 2.6 GHz band is presented. The proposed design…
An Efficient 290 GHz Harmonic Oscillator in Transferred-Substrate InP-DHBT Technology
/en/research/publications/an-efficient-290-ghz-harmonic-oscillator-in-transferred-substrate-inp-dhbt-technology
This paper presents a single-ended efficient 290 GHz harmonic oscillator, realized using 0.8 µm transferred-substrate (TS) InP-DHBT technology. The architecture of this oscillator is based…