The Optoelectronics Department designs, realizes and characterizes diode lasers in the wavelength range from 0.62 µm to 1.2 µm. The basis are III-V semiconductor layer structures on GaAs. The laser structures are realized by optimized process steps of our chip technology. For the assembly of our high-power diode lasers we use our established packaging technology.
Increasing power, efficiency, brightness, brilliance and reliability of laser diodes is the focus of FBH's investigations. In addition to basic research on high-brightness laser diodes in the watt range, the institute develops custom-made laser diodes for material processing, precision metrology, medicine, non-linear optics as well as display and sensor technology. One of the increasing fields of interest is the qualification of laser diodes for use in space applications. FBH's activities are integrated in national and international research projects.
Our core compentencies
- chip design
- chip technology
- laser measurements