Search
Are you looking for a scientific paper? Please use the special search function. The standard search does not return results from publications.
Nanofabrication protocols for advanced quantum photonic circuits based on self-assembled quantum dots
/en/events/nanofabrication-protocols-for-advanced-quantum-photonic-circuits-based-on-self-assembled-quantum-dots
Nanofabrication protocols for advanced quantum photonic circuits based on self-assembled quantum dots Tommaso PregnolatoNiels Bohr Institut, Universität Kopenhagen
Development of optical microresonators and waveguides – the basis for an error-free analyzer for Bell states
/en/research/research-news/development-of-optical-microresonators-and-waveguides-the-basis-for-an-error-free-analyzer-for-bell-states
FBH contributes its expertise in the field of process technology and has developed a design which combines sufficient mechanical stability with excellent optical properties.
Analytical description of UV-LED degradation allows to predict device lifetime
/en/research/research-news/analytical-description-of-uv-led-degradation-allows-to-predict-device-lifetime
FBH has investigated current induced degradation processes of deep UV LEDs. The derived acceleration factors point to the importance of optimizing the charge carrier distribution to improve the…
Efficient power generation – at high frequencies, high voltages and with short switching times
/en/media-center/press-releases/efficient-power-generation-at-high-frequencies-high-voltages-and-with-short-switching-times
At the "European Microwave Week" (EuMW), FBH will present its portfolio in III-V electronics: components for the digitization of mobile communications, for industrial and biomedical systems as well…
Focus on defects
/en/media-center/press-releases/focus-on-defects
For four days, scientists discussed methods for analysis of crystal imperfections at the 18th International DRIP Conference in Berlin
Lateral β-Ga2O3 MOSFET for power switching applications with a breakdown voltage of 1.8 kV
/en/research/research-news/lateral-b-ga2o3-mosfet-for-power-switching-applications-with-a-breakdown-voltage-of-18-kv
FBH and IKZ worked on the fabrication of lateral β-Ga2O3-based power transistors with enhanced device performance through combining optimized layer growth and improved process technology.
European Microwave Week 2019
/en/events/european-microwave-week-2019
Visit us at EuMW at the conference and at the joint booth of Research Fab Microelectronics Germany.
IEEE High Power Diode Lasers & Systems Conference
/en/events/ieee-high-power-diode-lasers-systems-conference
The FBH presents current research results at the conference and is represented with a keynote
2nd Innovation Day of Research Fab Microelectronics Germany
/en/events/2nd-innovation-day-of-research-fab-microelectronics-germany
Under the motto "From IDays to IDeas", the Research Fab Microelectronics Germany presents new developments on the subject of "Microwave & Terahertz" and offers experts, users and colleagues a…