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Ferdinand-Braun-Institut showcases latest developments at Laser Optics Berlin
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Ferdinand-Braun-Institut showcases latest developments at Laser Optics Berlin Due to their reliability, small size, high output power and high efficiency, semiconductor lasers are increasingly…
Prof. Dr.-Ing. Wolfgang Heinrich becomes new President of the European Microwave Association
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Der langjährige Abteilungsleiter Mikrowellentechnik des Ferdinand-Braun-Instituts und Professor an der Technischen Universität Berlin, Wolfgang Heinrich, übernahm zum Jahreswechsel 2010 die…
Leistungsstarke DFB-Breitstreifenlaser erzielen erstmalig mehr als 60% Konversionseffizienz
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Leistungsstarke DFB-Breitstreifenlaser erzielen erstmalig mehr als 60% Konversionseffizienz Leistungsstarke Breitstreifenlaser mit internen, epitaktisch überwachsenen distributed feedback (DFB)…
Best Paper Award: ESREF 2012
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Best Paper Award: ESREF 2012 The publication from A. Zanandrea, E. Bahat-Treidel, F. Rampazzo, A. Stocco, M. Meneghini, E. Zanoni, O. Hilt, P. Ivo,…
Balanced 20 W GaN X-band power amplifier
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Power amplifiers (PA) are key components of any communication, radar or satellite system. At the FBH, GaN power amplifier MMICs are realized providing both a high output power and a high efficiency.…
Quantification of matrix and impurity elements in AlxGa1-xN compounds by Secondary Ion Mass Spectrometry
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The AlGaN material system is of increasing interest for UV-based optoelectronic devices such as light emitting diodes (LEDs), laser diodes and photodetectors. The electronic properties of AlxGa1-xN…
MOVPE growth of polar (0001) and non-polar (11-20) GaN on cone-shaped patterned sapphire substrates
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The patterned sapphire substrates (PSS) technology based on lateral overgrowth has been proven effective in reducing threading dislocation density and releasing in-plane residual strain of GaN.…
New class of high-performance THz MMICs – process established at FBH
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Recently, FBH in cooperation with IHP has established an InP-based process with operating frequencies up to the 250 GHz range which can be realized on top of a fully processed BiCMOS wafer.…
Reduced dislocation density – patterning of sapphire to fabricate templates for GaN/AlGaN epitaxy
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Epitaxial growth of GaN/AlGaN layers for light emitters in the ultraviolet spectral range has increasingly attracted interest in recent years. To improve the internal quantum efficiency of such LEDs,…
Filamentation and beam inhomogeneities in GaN broad area laser diodes
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The phenomenon known as filamentation has been investigated at FBH for blue laser diodes. The results allow for a better understanding of the interplay of epitaxial layer homogeneity, basic laser…