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A New Modulator for Digital RF Power Amplifiers Utilizing a Wave-Table Approach
/en/research/publications/a-new-modulator-for-digital-rf-power-amplifiers-utilizing-a-wave-table-approach
This work presents for the first time a wave-table based coding scheme to generate a high speed binary input signal for digital RF power amplifiers. The approach maximizes the utilization of the time…
Discrete Gate Bias Modulation of a Class-G Modulated RF Power Amplifier
/en/research/publications/discrete-gate-bias-modulation-of-a-class-g-modulated-rf-power-amplifier
In this paper the combination of class-G supply modulation with discrete level gate bias modulation is investigated. Previous work with class-G supply modulation revealed that the supply voltage…
An 60 W Average Power Wideband Amplifier with Envelope Tracking for DVB-T Applications
/en/research/publications/an-60-w-average-power-wideband-amplifier-with-envelope-tracking-for-dvb-t-applications
In this paper, the development of a DVB-T power amplifier (PA) with enhanced efficiency performance based on the envelope tracking method (ET) is described. The amplifier works in the ultrahigh…
Multi-Octave GaN High Power Amplifier Using Planar Transmission Line Transformer
/en/research/publications/multi-octave-gan-high-power-amplifier-using-planar-transmission-line-transformer
In this work, design, implementation and experimental results of an efficient, high power and multi-octave GaN-HEMT power amplifier (PA) are presented. To overcome the low optimum source and load…
Two-Stage Harmonically Tuned 50W GaN-HEMT Wideband Power Amplifier
/en/research/publications/two-stage-harmonically-tuned-50w-gan-hemt-wideband-power-amplifier
In conjunction with suited terminations of harmonic load impedances, this paper contributes a systematic analysis and design for a high power, high efficiency and broadband GaN-HEMT power amplifier…
A 100 GHz Fundamental Oscillator with 25% Efficiency Based on Transferred-Substrate InP-DHBT Technology
/en/research/publications/a-100-ghz-fundamental-oscillator-with-25-efficiency-based-on-transferred-substrate-inp-dhbt-technology
A 96-GHz fixed-frequency fundamental oscillator with high efficiency is presented, realized using a transferred-substrate (TS) 0.8 µm InP-DHBT process. It delivers 9 dBm output power, with…
A 315 GHz Reflection-Type Push-Push Oscillator in InP-DHBT Technology
/en/research/publications/a-315-ghz-reflection-type-push-push-oscillator-in-inp-dhbt-technology
A 315-GHz reflection-type push-push oscillator is presented. It is realized using a 0.8 µm-emitter transferred-substrate (TS) InP-DHBT technology with an fmax of 320 GHz. The oscillator…
Response Time of VSWR Protection for GaN HEMT based Power Amplifiers
/en/research/publications/response-time-of-vswr-protection-for-gan-hemt-based-power-amplifiers
Protection against high voltage-standing-wave-ratios (VSWR) is of great importance in many power amplifier applications. Despite excellent thermal and voltage breakdown properties even gallium…
Development of K- and Ka-band High-Power Amplifier GaN MMIC Fabrication Technology
/en/research/publications/development-of-k-and-ka-band-high-power-amplifier-gan-mmic-fabrication-technology
In the present work, we compare two different embedded-gate technologies used for the fabrication of 150 nm AlGaN/GaN HEMTs intended for K- and Ka-band satellite communication applications. DC…
Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures
/en/research/publications/dominance-of-radiative-recombination-from-electron-beam-pumped-deep-uv-algan-multi-quantum-well-heterostructures
AlGaN-based multiple-quantum-well (MQW) heterostructures were irradiated with a pulsed electron beam. Excitation with a beam energy of 12 keV and a beam current of 4.4mA produced…