Research News

Alkali vapor cells are a key component in many integrated atomic devices. Size, weight, reliability and production cost determine their applicability and economic viability. We have developed a technology for producing highly miniaturized vapor cells that meets the increasing demands of future mobile applications, including navigation, sensing, and telecommunications.

We have developed a low-temperature ALD passivation for InP/InGaAs HBTs tailored to aggressively scaled devices. By improving surface control, the approach supports reliable millimeter-wave and sub-terahertz applications and leads to higher gain and improved RF performance.

We developed an innovative peak finder approach for effective dimensionality reduction of spectroscopic data. It retains interpretability of results while outperforming selected state-of-the-art feature reduction methods in classification accuracy.

Reliable and rapid characterization of GaN HEMTs is essential for accurate models and circuit design. We have developed a MHz load-line technique that enables efficient extraction of compact model parameters, offering a fast alternative to conventional pulsed measurements.

Ion implantation can define tunnel-junction apertures in VCSELs without oxidation, but lateral proton straggle alters their effective size. By modelling this effect, we extract reliable specific resistances across different designs – without needing full layer or implantation details.

We have developed compact diode laser modules emitting at 619 nm – a wavelength crucial for quantum technologies and industrial use. These efficient, wavelength-stabilized sources enable scalable, miniaturized systems previously achievable only with complex solid-state lasers.

Our new optically guided probing method and image-analysis machine learning algorithms enable precise, fully automated on-wafer measurements of RF transistors. This approach improves probes’ position accuracy below 2 µm in measurements up to 50 GHz.