Photoluminescence (PL) is sensitive on various characteristics of III-V semiconductors which are related to conductivity and light generation efficiency. The materials analytics group at FBH uses various PL methods to optimize crystal growth for GaN laser diodes.

FBH and its partner TU Berlin have succeeded in significantly increasing the lifetime of its UVC LEDs to beyond 10,000 h by using AlN base layers of high crystalline quality. Crucial for this improvement is a reduction of the threading dislocation densities in the active region.

FBH has developed a potential shifting driver amplifier. The compact module contains a novel inhouse GaN driver chip. It delivers a voltage gain of about 11 at a usual GaN-HEMT input load and provides a potential shift between -1.5 V and -11 V, respectively.

FBH has succeeded in fabricating nanostructures in diamond with a diameter of about 200 nm into which single quantum emitters were incorporated. These nanopillars enable the efficient collection of single photons. This is crucial for a variety of applications in quantum technology.

Novel kW-class 780 nm pump modules with near symmetric beam quality have been demonstrated, suited for high repetition rate, long-pulse applications, without micro-channel coolers – a key enabling technology for emerging high-energy-class Mid-IR lasers.

Low-inductance switching and low-thermal impedance environments are key parameters to enable GaN devices high switching speed. FBH has developed AlN power electronic modules that can serve as fundamental building blocks of large-scale plug-and-play power electronic systems.