The multi-emitter source is ideally suited for autonomous driving, generating high peak power and pulses in the nanosecond range. Short pulses guarantee both high spatial resolution and eye safety.

High-power diode lasers based on GaAs are the most efficient light sources for converting electrical input to optical power. For making them even more efficient, FBH continued its work to understand and overcome power limiting factors.

To reduce power consumption of optoelectronic devices FBH conducts researches to lower contact resistance between the contact and the semiconductor material. Focus is the contact system at the Pd/gallium nitride (GaN) interface.

FBH has realized a compact micro-integrated laser module for a transportable, robust, and user-friendly optical clock to be operated outside specialized labs. The clock itself is based on the ²S_1/2-²D_3/2 transition of a single ¹⁷¹Yb⁺ ion at 436 nm.

FBH has developed an ultra-compact microwave plasma source for atmospheric pressure. It delivers a potential-free microwave plasma with a plasma power in the 15 to 20 W range, which is sufficient for many applications.

To treat eye diseases, laser coagulation with laser emission at 532 nm is widely used. For this purpose, FBH is developing high reliable, high spectral radiance laser sources emitting at 1064 nm for second harmonic generation, thus halving the wavelength.

Precision agriculture is becoming increasingly important. The FBH evaluates the potential of Raman spectroscopy. The non-destructive optical method can be used to characterize soil, thus paving the way for efficient nutrient management.

High-power, highly efficient broad area diode lasers that are wavelength-stabilized by integrated Bragg gratings are in high demand for example for pumping narrow absorption bands in solid-state lasers. FBH has been conducting intensive research leading to continuous improvements of the institute’s DFB-BA lasers.

To make older systems ready for digitization, FBH has been developing iSensU to provide ad-hoc connectivity to legacy devices, black-box sensors, and industrial light towers. iSensU will shortly be made available to FBH's partner institutes within Research Fab Microelectronics Germany.

InP HBT technology is an ideal candidate for microwave applications in the terahertz range. The FBH uses a transfer substrate process to successfully suppress significant parasitic effects. For further improvements, an in-house diamond wafer bonding process was developed to enhance the thermal management of the wafer.

The next-generation wireless communication infrastructure demands for high flexibility, low cost and high efficiency. The FBH has developed a digital outphasing power amplifier module, an important step towards the all-digital transmitter chain.

FBH demonstrates new performance records of diode laser bars at the operation point of 1 kW. One design approach increased the conversion efficiency up to 66%, while an alternative approach reduced the lateral divergence down to 8.8°, both best-in-class results.