Development & Fabrication of GaAs Diode Lasers

We develop and fabricate tailored gallium arsenide-based diode laser chips in the wavelength range from 0.62 µm to 1.2 µm. This includes chip design, where we use state-of-the-art simulation methods, and low-volume and pilot-series manufacturing:

•     ridge waveguide & tapered lasers
•     broad area lasers - single emitters & laser bars
•     frequency stabilized diode lasers - DBR, DFB, mECDL
•     tunable & dual-wavelength diode lasers
•     pulsed diode lasers

On request, we also offer passivation and coating of laser facets as well as laser chip assembly using our established mounting and assembly technology.