Directlink:

  1. Ferdinand-Braun-Institut
  2. Transfer & Services
  3. Devices
  4. GaAs Diode Lasers

Development & Fabrication of GaAs Diode Lasers

We develop and fabricate tailored gallium arsenide-based diode laser chips in the wavelength range from 0.62 µm to 1.2 µm. This includes chip design, where we use state-of-the-art simulation methods, and low-volume and pilot-series manufacturing:

  •     ridge waveguide & tapered lasers
  •    broad area lasers - single emitters & laser bars
  •    frequency stabilized diode lasers - DBR, DFB, mECDL
  •    tunable & dual-wavelength diode lasers
  •    pulsed diode lasers

On request, we also offer passivation and coating of laser facets as well as laser chip assembly using our established mounting and assembly technology. Our laser chiplets can be integrated onto various material platforms, so-called photonic integrated circuits (PICs).

Three round wafers of different sizes stand next to each other on a light-colored background.