Materials analytics plays an essential role in the development of epitaxial growth processes and in quality control for epitaxy and device fabrication. Due to fast and direct access to methods such as X-ray diffraction, photoluminescence, electroluminescence, carrier-density profiling, and electron microscopy, we are able to develop new epitaxial growth processes within a short time-scale. The rapid feed-back regarding the analysis of layer structures is indispensable for the production of highly complex devices (e. g. laser structures with integrated Bragg grating). Data from materials analytics are key informations for the quality management in epitaxy. Routine assessment of critical parameters after the exchange of source materials or maintenance of growth systems are the basis for our high quality standard products. The analysis of failure causes is essential for further device development and thus helps to push device technology forward. Our analytical methods and our expertise are also offered to partners and customers.
In-depth information on structural properties of semiconductor structures after certain epitaxial or process steps, in particular on the composition and design of interfaces on nanometer scales, is obtained via transmission electron microscopy (TEM). We use the instrumental equipment for TEM analyses within the framework of a partnership with the Humboldt-Universität zu Berlin.
We also offer our analytical processes and expertise as services to partners and customers: