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Logo (jpg, rgb modus) of Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik. Please contact our public relations office in case you need further formats.

© FBH/Christoph Ruß

Aerial view of the Ferdinand-Braun-Institut – main building. In the foreground, with the FBH logo, is the extension building opened in 2015) with laboratory and office spaces. To the left is the rear facade of cleanroom-1, which is clad with solar modules. The entrance to the main building is on the side not visible in the photo.

© FBH/P. Immerz

Multi-wafer reactor for Metal Organic Vapor Phase Epitaxy (MOVPE) of gallium nitride. Substrate wafers are put inside a sluice and seperately placed into the reactor. During this first step on its way to the final device atomic-thin layers are deposited onto the substrate material (= wafer).

© FBH/Matthias Baumbach

Electroplating – this electrochemical process is used to apply metallic layers to semiconductor wafers. Areas of the wafers that have been covered beforehand, e.g. with photoresist, are not electroplated. This allows precise control over where the electroplated layers are formed on the wafer and enables structures in the micrometer range and below to be produced.

© FBH/ Matthias Baumbach

Microtechnologist at the microscope during wafer inspection

© FBH/schurian.com

Measurement of single circuits with special probe tips, which only insignificantly distort the RF properties of the circuits. The distance of the contacts is usually in the range of only 50-150 micrometer.

©FBH/schurian.com

This wafer mapper is used to determine the characteristic properties of AlGaN-based UV LEDs on a 2-inch wafer such as optical power, voltage, and wavelength and to investigate their uniformity. The UV radiation of these LEDs is used, among others, for medical applications in dermatology, for sensing, and disinfection.

©FBH/schurian.com

Terahertz (THz) circuits in InP-on-BiCMOS technology for THz signal generation. The high-frequency indium phosphide (InP) double-heteorostructure bipolar transistors (DHBT) are heterointegrated onto a silicon BiCMOS wafer. The dark areas indicate BiCMOS oscillators at 82 GHz and the brighter circuit parts are InP-DHBT multipliers and amplifier circuits.

© FBH/schurian.com

Completely processed 3" wafer with laser diodes.

© FBH/schurian.com

AlGaN-based UV LED chip mounted in flip-chip geometry in a hermetically sealed AlN ceramic package with a quartz lid. The package protects the chip in humid environments and efficiently dissipates the heat. The UV light emitted by the LED can be used for plant growth lighting, dermatology, sensing, disinfection, and others

© FBH/schurian.com

Kilowatt-class pump laser modules for high-power laser applications

©FBH/schurian.com

Fiber coupled amplifier module with emission in the yellow spectral range with integrated frequency conversion to the yellow spectral range at 561 nm with 200 mW for biophotonics applications.

© FBH/schurian.com

Quantum light module for optical coherence tomography (OCT) and spectroscopy measurements in the mid-infrared (MIR) range using “undetected photons.” The FBH quantum light modules are based on entangled photon pairs that are brought to interference in a nonlinear interferometer, thereby making the MIR spectral range accessible. Measurements are taken entirely in the more cost-effective near-infrared (NIR) range.

© FBH/P. Immerz
High-current nanosecond laser driver with integrated ridge-waveguide laser diode for LiDAR applications. The FBH provides grating-stabilized diode lasers with multiple epitaxially stacked active regions that are suitable for pulsed nanosecond operation in time-of-flight (ToF) LiDAR. These are used, for example, to measure distances in the automotive sector.
 

© FBH/schurian.com

The novel module can be flexibly used for different frequencies, is very compact, and highly efficient. These features make it particularly attractive with respect to the digitalization of base stations for mobile communications since the power amplifier mainly determines the efficiency of the overall system and thus operational costs.

© FBH/P. Immerz

They each consist of two GaN-based power switching transistors in normally-off technology and two GaN free-wheeling diodes - in an electronic power converter they are interconnected to a full bridge. The symetrically built half bridges are designed to achieve an output power of 10 kW with an efficiency clearly > 90%. Such power converters are suited e.g. for on-board charging units in e-cars.