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Images related to press releases

can be found directly on the page of the respective release

  • Logo

    Logo (jpg, rgb modus) of Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik. Please contact our public relations office in case you need further formats.

  • Aerial Image of the Ferdinand-Braun-Institut

    © FBH/Dimitri Stoppel

    Aerial photograph of the Ferdinand-Braun-Institut. In the forefront, the latest extension building of FBH can be seen offering 1,800 sqm laboratory and office space. On the left side, the image shows the backward façade of the cleanroom cladded with solar modules. The main entrance is situated on the rear side of this image.

  • Metal Organic Vapor Phase Epitaxy (MOVPE) - Planetary Reactor

    © FBH/P. Immerz

    Multi-wafer reactor for Metal Organic Vapor Phase Epitaxy (MOVPE) of gallium nitride. Substrate wafers are put inside a sluice and seperately placed into the reactor. During this first step on its way to the final device atomic-thin layers are deposited onto the substrate material (= wafer).

  • Plasma Etching in the Cleanroom

    © FBH/Petra Immerz

    Dry etching technique that is used, for example, in semiconductor technology to remove material in a controlled manner. Defined parts of the substrate are therefore coated with a material such as photoresist – these parts withstand the subsequent etching process unharmed. This process allows to realize structures in the millimeter range and below.

  • Microtechnologist in the Cleanroom

    © FBH/schurian.com

    A microtechnologist mounting laser stacks – such diode lasers deliver specifically high output powers as, for example, required for materials processing.

  • On-wafer Microwave Measurement

    © FBH/schurian.com

    Measurement of single circuits with special probe tips, which only insignificantly distort the RF properties of the circuits. The distance of the contacts is usually in the range of only 50-150 micrometer.

  • Electroluminescence Measurement of AlGaN UV LEDs Using a Wafer Mapper

    ©FBH/schurian.com

    This wafer mapper is used to determine the characteristic properties of AlGaN-based UV LEDs on a 2-inch wafer such as optical power, voltage, and wavelength and to investigate their uniformity. The UV radiation of these LEDs is used, among others, for medical applications in dermatology, for sensing, and disinfection.

  • Wafer with Terahertz Circuits

    ©FBH/schurian.com

    Terahertz (THz) circuits in InP-on-BiCMOS technology for THz signal generation. The high-frequency indium phosphide (InP) double-heteorostructure bipolar transistors (DHBT) are heterointegrated onto a silicon BiCMOS wafer. The dark areas indicate BiCMOS oscillators at 82 GHz and the brighter circuit parts are InP-DHBT multipliers and amplifier circuits.

  • Wafer with Laser Diodes

    © FBH/schurian.com

    Completely processed 3" wafer with laser diodes.

  • UV Light-Emitting Diode (LED)

    © FBH/schurian.com

    AlGaN-based UV- LED chip mounted in flip-chip geometry in a hermetically sealed ceramic package with quartz lid. The package protects the chip in humid environments and efficiently dissipates the heat. The UV light emitted by the LED can be used for plant growth lighting, dermatology, sensing, disinfection, and others

  • New Generation of Laser Diodes

    © FBH/schurian.com

    Design improvements led to enhanced broad area lasers featuring high output powers and high efficiencies at the same time – up to now, high output powers usually came along with a significantly poorer efficiency (conversion efficiency of electrical into optical power).

  • Fiber-Coupled Laser Modules for Systems Integration

    ©FBH/schurian.com

    By fitting fiber outputs to diode laser modules the complex diode laser radiation can be easily integrated into systems, thus making it utilizable for a wide variety of applications. These range from bio medical technology through production automatization to basic research. Laser modules with fiber output are ideally suited to safely guide high output powers up to the watt range right to the point of usage. The fibers can also be realized polarization-maintaining in order to optimally use the radiation for polarization-sensitive effects such as frequency doubling.

  • ps Light Source with Integrated Pulse Picker

    © FBH/schurian.com

    This picosecond light source with hybrid-integrated electronics combines FBH’s competencies in optoelectronics and microwaves. Such laser sources based on diode lasers offer a high application and market potential in materials processing, sensors, and analytics. They are the center pieces of FBH’s compact pulse light sources that deliver flexible pulses in the pico- and nanosecond range with nanojoule energies.

  • Digital Power Amplifier Module for 5G, the Mobile Communication of the Future

    © FBH/schurian.com

    The novel module can be flexibly used for different frequencies, is very compact, and highly efficient. These features make it particularly attractive with respect to the digitalization of base stations for mobile communications since the power amplifier mainly determines the efficiency of the overall system and thus operational costs.

  • Symmetric Half Bridge

    © FBH/P. Immerz

    They each consist of two GaN-based power switching transistors in normally-off technology and two GaN free-wheeling diodes - in an electronic power converter they are interconnected to a full bridge. The symetrically built half bridges are designed to achieve an output power of 10 kW with an efficiency clearly > 90%. Such power converters are suited e.g. for on-board charging units in e-cars.

  • Prof. Dr. Günther Tränkle

    © FBH/Katja Bilo

    Scientific Director of Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik

  • Prof. Dr. Günther Tränkle

    © FBH/Katja Bilo

    Scientific Director of Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik