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Images related to press releases

can be found directly on the page of the respective release

  • Logo

    Logo (jpg, rgb modus) of Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik. Please contact our public relations office in case you need further formats.

  • Aerial Image of the Ferdinand-Braun-Institut

    © FBH/Dimitri Stoppel

    Aerial photograph of the Ferdinand-Braun-Institut. In the forefront, the latest extension building of FBH can be seen offering 1,800 sqm laboratory and office space. On the left side, the image shows the backward façade of the cleanroom cladded with solar modules. The main entrance is situated on the rear side of this image.

  • Metal Organic Vapor Phase Epitaxy (MOVPE) - Planetary Reactor

    © FBH/P. Immerz

    Multi-wafer reactor for Metal Organic Vapor Phase Epitaxy (MOVPE) of gallium nitride. Substrate wafers are put inside a sluice and seperately placed into the reactor. During this first step on its way to the final device atomic-thin layers are deposited onto the substrate material (= wafer).

  • Electroplating system in the cleanroom of the Ferdinand-Braun-Institut

    © FBH / Matthias Baumbach

    Electroplating - the electrochemical process is used to deposit metallic layers on semiconductor wafers.  Areas on the wafers that were previously covered with photoresist, for example, are not electroplated. In this way, it is possible to specifically control where the electroplated layers are created on the wafer and to produce structures in the micrometer range and below.

  • Microtechnologist in the Cleanroom

    © FBH/ Matthias Baumbach

    Microtechnologist at the microscope during wafer inspection

  • On-wafer Microwave Measurement

    © FBH/

    Measurement of single circuits with special probe tips, which only insignificantly distort the RF properties of the circuits. The distance of the contacts is usually in the range of only 50-150 micrometer.

  • Electroluminescence Measurement of AlGaN UV LEDs Using a Wafer Mapper


    This wafer mapper is used to determine the characteristic properties of AlGaN-based UV LEDs on a 2-inch wafer such as optical power, voltage, and wavelength and to investigate their uniformity. The UV radiation of these LEDs is used, among others, for medical applications in dermatology, for sensing, and disinfection.

  • Wafer with Terahertz Circuits


    Terahertz (THz) circuits in InP-on-BiCMOS technology for THz signal generation. The high-frequency indium phosphide (InP) double-heteorostructure bipolar transistors (DHBT) are heterointegrated onto a silicon BiCMOS wafer. The dark areas indicate BiCMOS oscillators at 82 GHz and the brighter circuit parts are InP-DHBT multipliers and amplifier circuits.

  • Wafer with Laser Diodes

    © FBH/

    Completely processed 3" wafer with laser diodes.

  • UV Light-Emitting Diode (LED)

    © FBH/

    AlGaN-based UV LED chip mounted in flip-chip geometry in a hermetically sealed AlN ceramic package with a quartz lid. The package protects the chip in humid environments and efficiently dissipates the heat. The UV light emitted by the LED can be used for plant growth lighting, dermatology, sensing, disinfection, and others

  • Pump Laser Modules

    © FBH/

    Kilowatt-class pump laser modules for high-power laser applications

  • Compact Fiber Coupled Amplifier Module


    Fiber coupled amplifier module with emission in the yellow spectral range with integrated frequency conversion to the yellow spectral range at 561 nm with 200 mW for biophotonics applications.

  • Digital Power Amplifier Module for Modern 5G Mobile Communications

    © FBH/

    The novel module can be flexibly used for different frequencies, is very compact, and highly efficient. These features make it particularly attractive with respect to the digitalization of base stations for mobile communications since the power amplifier mainly determines the efficiency of the overall system and thus operational costs.

  • Symmetric Half Bridge

    © FBH/P. Immerz

    They each consist of two GaN-based power switching transistors in normally-off technology and two GaN free-wheeling diodes - in an electronic power converter they are interconnected to a full bridge. The symetrically built half bridges are designed to achieve an output power of 10 kW with an efficiency clearly > 90%. Such power converters are suited e.g. for on-board charging units in e-cars.