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FBH paper selected as featured article by Applied Physics Letters
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The paper "Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers" by Seval Arslan et. al. was selected as featured article by the journal Applied…
Getting polymers in shape – microwave permittivity characterization
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Dielectric constant and loss tangent of polymer materials at microwave frequencies are important parameters for various industrial processes. Of particular interest is their temperature dependence.…
Podcast on the Long Night of the Sciences
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This year many things are different - also for the Long Night of the Sciences. Instead of lab tours and hands-on experiments on site, this year there will be a podcast. In episode 6 of the series the…
Secure satellite communication - Berlin team wins INNOspace Masters
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On 14 October, a Berlin-based team from TU, HU and FBH won the DLR Challenge. TMoreover, the winning project "QuMSeC" was chosen as overall winner of the INNOSpace Masters 2019/20.
Charge-shifting CCD operation enables fast Shifted Excitation Raman Difference Spectroscopy
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A charge-shifting CCD-SERDS approach using a custom 830 nm dual-wavelength diode laser and a specialized CCD overcomes technical limitations of conventional CCD operation. It reduces…
FBH’s high-performance FET-based THz detectors reach user level
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Based on its GaN HEMT MMIC process, the FBH develops state-of-the-art TeraFETs. They work at room temperature with excellent sensitivity, comparable to classical diode-based performance. The THz…
The floating-ground transistor – a key enabler for reverse-type envelope tracking systems for space applications and 5G
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The packaged floating-ground RF power GaN-HEMT is a novel patented invention developed by FBH. It allows straightforward floating-ground RF PA designs, but also opens a whole new field of GaN based…
Widely tunable monolithically integrated GaAs lasers with sampled gratings
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Widely tunable monolithically integrated GaAs lasers with sampled gratings are attractive light sources for industrial and biomedical sensor applications. Recently we have realized a single…
Degradation of AlGaN-based metal-semiconductor-metal UV photodetectors
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Degradation of AlGaN-based metal-semiconductor-metal UV photodetectors AlxGa1-xN-based metal-semiconductor-metal photodetectors (MSM PDs) are very attractive for the detection of ultraviolet…
Plasma etching of surface gratings for laser diodes emitting in the blue-violet spectral region
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Plasma etching of surface gratings for laser diodes emitting in the blue-violet spectral region For GaN-based DFB laser diodes, specific etching processes are required to realize laterally coupled…