Search
Are you looking for a scientific paper? Please use the special search function. The standard search does not return results from publications.
Leistungsstarke DFB-Breitstreifenlaser erzielen erstmalig mehr als 60% Konversionseffizienz
/en/research/research-news/leistungsstarke-dfb-breitstreifenlaser-erzielen-erstmalig-mehr-als-60-konversionseffizienz
Leistungsstarke DFB-Breitstreifenlaser erzielen erstmalig mehr als 60% Konversionseffizienz Leistungsstarke Breitstreifenlaser mit internen, epitaktisch überwachsenen distributed feedback (DFB)…
Best Paper Award: ESREF 2012
/en/research/research-news/best-paper-award-esref-2012
Best Paper Award: ESREF 2012 The publication from A. Zanandrea, E. Bahat-Treidel, F. Rampazzo, A. Stocco, M. Meneghini, E. Zanoni, O. Hilt, P. Ivo,…
Balanced 20 W GaN X-band power amplifier
/en/research/research-news/balanced-20-w-gan-x-band-power-amplifier
Power amplifiers (PA) are key components of any communication, radar or satellite system. At the FBH, GaN power amplifier MMICs are realized providing both a high output power and a high efficiency.…
Quantification of matrix and impurity elements in AlxGa1-xN compounds by Secondary Ion Mass Spectrometry
/en/research/research-news/quantification-of-matrix-and-impurity-elements-in-alxga1-xn-compounds-by-secondary-ion-mass-spectrometry
The AlGaN material system is of increasing interest for UV-based optoelectronic devices such as light emitting diodes (LEDs), laser diodes and photodetectors. The electronic properties of AlxGa1-xN…
MOVPE growth of polar (0001) and non-polar (11-20) GaN on cone-shaped patterned sapphire substrates
/en/research/research-news/movpe-growth-of-polar-0001-and-non-polar-11-20-gan-on-cone-shaped-patterned-sapphire-substrates
The patterned sapphire substrates (PSS) technology based on lateral overgrowth has been proven effective in reducing threading dislocation density and releasing in-plane residual strain of GaN.…
New class of high-performance THz MMICs – process established at FBH
/en/research/research-news/new-class-of-high-performance-thz-mmics-process-established-at-fbh
Recently, FBH in cooperation with IHP has established an InP-based process with operating frequencies up to the 250 GHz range which can be realized on top of a fully processed BiCMOS wafer.…
Reduced dislocation density – patterning of sapphire to fabricate templates for GaN/AlGaN epitaxy
/en/research/research-news/reduced-dislocation-density-patterning-of-sapphire-to-fabricate-templates-for-ganalgan-epitaxy
Epitaxial growth of GaN/AlGaN layers for light emitters in the ultraviolet spectral range has increasingly attracted interest in recent years. To improve the internal quantum efficiency of such LEDs,…
Filamentation and beam inhomogeneities in GaN broad area laser diodes
/en/research/research-news/filamentation-and-beam-inhomogeneities-in-gan-broad-area-laser-diodes
The phenomenon known as filamentation has been investigated at FBH for blue laser diodes. The results allow for a better understanding of the interplay of epitaxial layer homogeneity, basic laser…
Prize of the European Microwave Association 2019 awarded to Wolfgang Heinrich
/en/media-center/press-releases/prize-of-the-european-microwave-association-2019-awarded-to-wolfgang-heinrich
Making microwave research visible and connecting the players in research and industry - this has been Wolfgang Heinrich's driving force for many years. For his outstanding engagement, the head of the…
Optimized buried Bragg gratings for high-power DFB-BA lasers
/en/research/research-news/optimized-buried-bragg-gratings-for-high-power-dfb-ba-lasers
High-power, highly efficient broad area diode lasers that are wavelength-stabilized by integrated Bragg gratings are in high demand for example for pumping narrow absorption bands in solid-state…