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Joint Lab Electromagnetic Fields
/ueber-uns/struktur/labs-departments/iii/v-elektronik/joint-lab-electromagnetic-fields
Im Joint Lab Electromagnetic Fields kooperieren wir mit der Gruppe von Prof. Dr.-Ing. Thomas Flisgen, Professur für Theoretische Elektrotechnik an der Brandenburgischen Technischen Universität…
Efficient soil analysis—enhancing a sensor platform for sustainable agriculture
/media-center/medienschau/efficient-soil-analysis-enhancing-a-sensor-platform-for-sustainable-agriculture
Precise information about agricultural soils is key to managing them more efficiently and sustainably. Researchers at the Leibniz institutes FBH and ATB have recently enhanced an existing sensor…
FBH at Laser World of Photonics
/media-center/medienschau/fbh-at-laser-world-of-photonics
The Ferdinand-Braun-Institut (FBH) will be presenting its range of photonics expertise and solutions at Laser World of Photonics in Munich from June 24 to 27, 2025.
Quantum satellite launched into space
/media-center/medienschau/quantum-satellite-launched-into-space
The QUICK³ nano satellite will test components for future quantum satellite systems. The goal is to enable rapid and secure communication using quantum technology.
Compact light control unit for use in a low-SWaP strontium optical atomic clock
/forschung/forschungsnews/compact-light-control-unit-for-use-in-a-low-swap-strontium-optical-atomic-clock
Using FBH’s unique hybrid micro-integration technology, we realized a compact light control unit for laser beam conditioning in a transportable strontium-based optical atomic clock. Equipped with…
Improved stability of InGaN-based laser diodes by overcoming facet degradation
/forschung/forschungsnews/improved-stability-of-ingan-based-laser-diodes-by-overcoming-facet-degradation
Blue-violet emitting laser diodes tend to form SiOx deposits on the facet, causing unstable laser thresholds and beam characteristics. A suited facet coating, together with a hermetically sealed TO…
Exploration of high-temperature PECVD SiNx for strain engineering of GaN-HEMTs
/forschung/forschungsnews/exploration-of-high-temperature-pecvd-sinx-for-strain-engineering-of-gan-hemts
We demonstrate that high-temperature PECVD SiNx passivation layers enable controlled stress engineering in GaN-HEMTs. Our approach specifically shifts the threshold voltage up to 1.4 V, supporting…
Optical metrology for efficient manufacturing of high-quality VCSELs
/forschung/forschungsnews/optical-metrology-for-efficient-manufacturing-of-high-quality-vcsels
Using in-situ and ex-situ optical metrology, we have optimized VCSEL growth and etching processes. This ensures precise layer control, aligning emission wavelengths efficiently and enabling “first…
Advancing high-frequency communication: Scaled InP HBT transistors with fmax> 500 GHz
/forschung/forschungsnews/advancing-high-frequency-communication-scaled-inp-hbt-transistors-with-fmax-500-ghz
We have developed a highly scalable 400 nm InP HBT process with fmax> 500 GHz. The technology offers precise control, consistent performance, and improved efficiency, contributing to…
Trap characterization of GaN HEMTs with MHz load-line measurements
/forschung/forschungsnews/trap-characterization-of-gan-hemts-with-mhz-load-line-measurements
Simple yet precise trap characterization is crucial for optimizing device and model performance. At FBH, we have developed an innovative characterization technique using MHz load-line measurements to…