GaN Diode Lasers for the Blue-Violet Spectral Range

We develop, manufacture and qualify GaN diode lasers (400 - 420 nm) according to customer requirements. For example, the wavelength, chip design, packaging and radiation characteristics can be tailored.

Individual steps or the entire FBH process chain (epitaxy, chip process technology, packaging technology, laser measurement technology) can be used for development and production. In addition, we offer the burn-in of diode lasers and perform reliability tests.

Gallium nitride diode laser of the FBH mounted p-up on submount and C-mount
GaN diode laser of the FBH mounted p-up on submount and C-mount