GaN, AlN and GaO-based Power Electronics
Wide Bandgap Devices
We develop and realize low-loss switching transistors for efficient and compact power converters. We take advantage from the high breakdown voltages combined with the high electron mobility of the semiconductor materials gallium nitride (GaN), aluminum nitride (AlN), and gallium oxide (Ga2O3).
Our lateral GaN transistors (up to 650 V) and AlN transistors (up to 1200 V) are suitable for fast-switching converters up to several kilowatts. The vertical GaN transistors with 1200 V blocking voltage target highly efficient converters above 10 kW.
Power Modules and Device Characterization
FBH converter modules and special dynamic measurement method demonstrate the strengths of the new wide-bangap semiconductors for power electronics.