2. Research
  3. III-V Electronics
  4. GaN, AlN and GaO-based Power Electronics

GaN, AlN and GaO-based Power Electronics

Wide Bandgap Devices

We develop and realize low-loss switching transistors for efficient and compact power converters. We take advantage from the high breakdown voltages combined with the high electron mobility of the semiconductor materials gallium nitride (GaN), aluminum nitride (AlN), and gallium oxide (Ga2O3).

Our lateral GaN transistors (up to 650 V) and AlN transistors (up to 1200 V) are suitable for fast-switching converters up to several kilowatts. The vertical GaN transistors with 1200 V blocking voltage target highly efficient converters above 10 kW.

Lateral GaN Transistors & Half Bridges

Vertical GaN Transistors

Lateral AlN Transistors

Gallium Oxide Power Transistors

Power Modules and Device Characterization

FBH converter modules and special dynamic measurement method demonstrate the strengths of the new wide-bangap semiconductors for power electronics.

[Translate to English:] Monolithischer GaN Halbbrückenchip auf einem AlN-basierten Leistungskern

Fast-Switching GaN Power Cores
[Translate to English:] Diodenloses GaN Halbbrückenmodul mit zwei 75 mOhm / 600 V GaN-Transistoren

GaN Power Converters
[Translate to English:] Hochstrompulser für waferbasierte Messungen

Power-Electronic Characterization