InP Ultra-Broadband Components

We develop ultra-wideband traveling-wave amplifiers (TWA) and wideband transimpedance amplifiers (TIA) with excellent characteristics. They are realized using our transfer substrate InP-DHBT process.

[Translate to English:] Chipfoto eines TIA und TWA

[Translate to English:] Chipfoto eines ultra-breitbandigen Verstärker TWAs

Wideband MMIC amplifiers (TWA)

Printed circuit board with various electronic components, including resistors, transistors and integrated circuits, arranged on a light green background. — Travelling wave MMIC amplifier with DC - 175 GHz bandwidth

Diagram with S-parameters in decibels (dB) on the y-axis and frequencies in gigahertz (GHz) on the x-axis. Three curves are shown in different colors (red, blue, green), with different slopes and gradients across the frequencies. — Simulated and measured results for the DC - 175 GHz

Our TWA achieve high output power Psat > 12 dBm, high efficiency > 10% with a low noise figure NF < 8 dB in a bandwidth > 150 GHz. The designed TIA achieve transimpedance > 50 dBOhm with high output power.

As an example, the figure shows a DC-175 GHz TWA with a gain of 12 dB and uniform linear phase and output power, with P1dB > 8 dBm at 150 GHz and a PAE of 6%.

Wideband transimpedance amplifiers (TIA)

Electronic circuit with various components such as resistors and semiconductors. The structure is complex and detailed, with several connecting lines and pins used for electrical connection. — Cascade of a TIA and a TWA operating up to 110 GHz

Diagram shows the S-parameters as a function of frequency from 0 to 110 GHz. Five curves are shown: S11, S21 and S22, each in measured and simulated values, recognizable by different line shapes and colors. — Simulated and measured results for the TIA TWA cascade with 1.75 dBGHz gain bandwidth product

Our InP DHBT transimpedance amplifiers achieve very low noise figures with simultaneously high output power and wide bandwidth.

Ultra broadband switches

Mikrochip mit komplexen Schaltkreisen und goldfarbenen Verbindungen auf einer bläulich-grünen Oberfläche. An verschiedenen Stellen sind kleine Halbleiter-Komponenten sichtbar, die miteinander verbunden sind. — Photograph of the SPDT switch

Diagram shows various S-parameters as a function of frequency, shown in dB. The curves represent S11, S21 (on and off) and S22. The values range from -60 dBm to 0 dBm over frequencies from 0 to 330 GHz. — Simulated and measured results for the MMIC switch

The electronic switches in InP DHBT technology show excellent isolation between ports, very good linearity and low losses. Using InP-TS-DHBT technology, single-pole double-throw (SPDT) MMIC switches with a bandwidth of > 235 GHz could be achieved with cut-off frequencies up to 300 GHz. The linearity with 1dB power referenced to the input is P_IN(1dB) > 16 dBm and the isolation is > 40 dB.

TERAWAY - terahertz technology for ultra-broadband and ultra-wideband operation of backhaul and fronthaul links in systems with SDN management of network and radio resources

The goal of the TERAWAY project is to build a comprehensive (fronthaul and backhaul) 5G infrastructure for THz data transmission to and from drones and balloons. The unmanned aerial vehicles will provide 5G or 6G connectivity for large and sporting events where local data traffic is very high.