Materials technology is the starting point to realize new concepts for optoelectronic and electronic devices. As a center of competence for metalorganic vapor phase epitaxy (MOVPE), the Materials Technology Department produces ultra-thin semiconductor layer structures. On a single-crystalline substrate atomic layer by atomic layer is deposited, leading to a homogeneous layer structure with exactly defined crystalline properties and accompanied by comprehensive material analytics.
- Nitride Epitaxy – heterostructures for UV LEDs, UV photodetectors, violet laser diodes and GaN transistors. Furthermore, we conduct research on HVPE processes for AlN templates.
- Arsenides & Phosphides Epitaxy – heterostructures for GaAs laser diodes both for device development at FBH and for external customers. Furthermore, we develop SAM structures for pulsed laser systems.