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Noise in GaN HEMTs and Circuits
/en/research/publications/noise-in-gan-hemts-and-circuits
GaN HEMTs are known to outperform GaAs technologies in power applications, while their noise performance drew much less attention. Only recently, results were published for GaN that are competitive…
Mutual Interference in Calibration Line Configurations
/en/research/publications/mutual-interference-in-calibration-line-configurations
When using multiline TRL calibrations for correcting on-wafer measurements, the accuracy of the result depends crucially on the consistency of the calibration set. For example, each line standard…
Novel Digital Microwave PA with More Than 40% PAE Over 10 dB Power Back-Off Range
/en/research/publications/novel-digital-microwave-pa-with-more-than-40-pae-over-10-db-power-back-off-range
This paper presents a novel GaN-based digital power amplifier (PA) circuit with a high overall power-added efficiency (PAE) over a 10 dB power back-off range for the 800 MHz LTE-band. It…
A 2-W GaN-based Three-level Class-D Power Amplifier with Tunable Back-off Efficiency
/en/research/publications/a-2-w-gan-based-three-level-class-d-power-amplifier-with-tunable-back-off-efficiency
This paper presents a voltage-mode three-level class-D gallium nitride (GaN) power amplifier (PA) for the 700-MHz band. The PA achieves a drain efficiency of 68.7%, at a maximum output power of…
GaN MMIC Active Arrays with Space Power Combination
/en/research/publications/gan-mmic-active-arrays-with-space-power-combination
This paper discusses the implementation of a K/Ka band GaN MMIC for developing space active arrays with space power combination, as a way to overcome TWTA needs. The obtained results, including the…
Highly Efficient Class-G Supply-Modulated Amplifier with 75 MHz Modulation Bandwidth for 1.8-1.9 GHz LTE FDD Applications
/en/research/publications/highly-efficient-class-g-supply-modulated-amplifier-with-75-mhz-modulation-bandwidth-for-18-19-ghz-lte-fdd-applications
This paper presents a broadband and highly efficient class-G supply modulated amplifier system. The system covers the full LTE band 1805-1880 MHz. The core element is the class-G supply…
An Active Balanced Up-Converter Module in InP-on-BiCMOS Technology
/en/research/publications/an-active-balanced-up-converter-module-in-inp-on-bicmos-technology
This paper presents an active up-converter realized as hetero-integrated module in InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 µm…
A 14 W Wideband Supply-Modulated System with Reverse Buck Converter and Floating-Ground RF Power Amplifier
/en/research/publications/a-14-w-wideband-supply-modulated-system-with-reverse-buck-converter-and-floating-ground-rf-power-amplifier
This paper presents a wideband supply-modulated system with a floating ground RF power amplifier and a reverse buck topology DC/DC converter. The power amplifier and the reverse buck converter are…
Thick-Film MIM BST Varactors for GaN Power Amplifiers with Discrete Dynamic Load Modulation
/en/research/publications/thick-film-mim-bst-varactors-for-gan-power-amplifiers-with-discrete-dynamic-load-modulation
Due to their extremely low static current consumption, varactors based on BST are perfect devices for realization of tunable and re-configurable components. This work presents fully screen-printed…
A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements
/en/research/publications/a-drain-lag-model-for-gan-hemt-based-on-chalmers-model-and-pulsed-s-parameter-measurements
This paper addresses a novel approach to account for trapping effects in the large-signal description of GaN HEMTs. Instead of relying on an internal effective gate voltage, which is not very…