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Watt-level yellow emitting lasers by frequency doubling of high power diode lasers
/en/research/publications/watt-level-yellow-emitting-lasers-by-frequency-doubling-of-high-power-diode-lasers
Distributed Bragg reflector tapered diode lasers (DBR-TPL) based on a quantum-well structure are presented, which emit at various wavelengths between 1100 and 1200 nm. Long lifetimes of these…
Reconfigurable Packaged GaN Power Amplifier Using Thin-Film BST Varactors
/en/research/publications/reconfigurable-packaged-gan-power-amplifier-using-thin-film-bst-varactors
A compact and reconfigurable GaN HEMT power amplifier using thin-film BST varactors, mounted inside a customized RF package is presented. With tuning of input and output matching networks several…
The Efficiency/Bandwidth Trade-Off in Class-G Supply-Modulated Power Amplifiers
/en/research/publications/the-efficiencybandwidth-trade-off-in-class-g-supply-modulated-power-amplifiers
This work deals with class-G, i.e. discrete level, supply modulated systems. It is investigated how the efficiency improvement achievable through this approach depends on the maximum switching…
Pulsed RF Characterization of Envelope Tracking Systems for Improved Shaping Function Extraction
/en/research/publications/pulsed-rf-characterization-of-envelope-tracking-systems-for-improved-shaping-function-extraction
This paper presents a measurement setup for pulsed RF characterization of a buck-converter based envelope tracking (ET) system. In contrast to continuous wave (CW) measurements, the proposed method…
Benchmarking of RF Measurement Systems for Digital Predistortion using Iterative Learning Control
/en/research/publications/benchmarking-of-rf-measurement-systems-for-digital-predistortion-using-iterative-learning-control
In this study iterative learning control (ILC) linearization is used to characterize the performance of a measurement system for modulated measurements and digital predistortion of RF power…
Impact of Parasitic Coupling on Multiline TRL Calibration
/en/research/publications/impact-of-parasitic-coupling-on-multiline-trl-calibration
On-wafer measurements of any Device Under Test (DUT) usually require the application of a calibration algorithm to eliminate unwanted but unavoidable effects due to the probe tip properties, the…
GaN-Based Digital Transmitter Chain Utilizing Push-Pull Gate Drivers for High Switching Speed and Built-In DPD
/en/research/publications/gan-based-digital-transmitter-chain-utilizing-push-pull-gate-drivers-for-high-switching-speed-and-built-in-dpd
This paper presents a fully digital transmitter chain, including a modulator and a digital microwave power amplifier (PA) MMIC. It uses push-pull drivers for the gates of the class-D final stage for…
D-band LNA using a 40-nm GaAs mHEMT technology
/en/research/publications/d-band-lna-using-a-40-nm-gaas-mhemt-technology
A D-band LNA is reported serving as a test vehicle of an under-development 40 nm GaAs HEMT technology developed by OMMIC foundry. The amplifier, designed on the basis of custom small-signal…
EM Simulation Assisted Parameter Extraction for the Modeling of Transferred-Substrate InP HBTs
/en/research/publications/em-simulation-assisted-parameter-extraction-for-the-modeling-of-transferred-substrate-inp-hbts
In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic…
On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design
/en/research/publications/on-the-optimization-of-gan-hemt-layout-for-highly-rugged-low-noise-amplifier-design
GaN low-noise amplifiers need to provide low noise figure, but are also often expected to be highly rugged. This paper addresses the question, how HEMT devices within a certain technology can be…