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Securing the technological lead with laser innovations
/en/media-center/press-releases/securing-the-technological-lead-with-laser-innovations
Together with small and medium-sized companies, research institutes from Berlin and Jena are developing the world's first pulsed Joule-class laser light source for the mid-infrared spectral range.…
Hot off the press - FBH's annual report 2017
/en/events/hot-off-the-press-fbhs-annual-report-2017
FBH's most important events and results achieved in 2017.
Transferred substrate InP/GaAsSb heterojunction bipolar transistor technology with fmax ∼ 0.53 THz
/en/research/research-news/transferred-substrate-inpgaassb-heterojunction-bipolar-transistor-technology-with-fmax-053-thz
InP-based semiconductors exhibit outstanding cut-off frequencies and large breakdown voltages and thus provide comparably high output powers in the THz frequency range. FBH's InP MMIC process allows…
Stabilization of AlN/sapphire templates during high-temperature annealing
/en/research/research-news/stabilization-of-alnsapphire-templates-during-high-temperature-annealing
To obtain high-performance AlGaN-based optoelectronic devices, AlN starting layers with low threading dislocation densities (TDD) are required. FBH scientists have investigated and demonstrated a…
Quantum Technology: New EU Research Network measures Bell-States
/en/media-center/press-releases/quantum-technology-new-eu-research-network-measures-bell-states
European research network launched aiming to develop an analysis device for special entangled quantum states - FBH is also part of it.
Broadband InP DHBT Millimeter-wave Integrated Circuit (MMIC) Components for DC-300 GHz Frequency Range
/en/media-center/press-releases/broadband-inp-dhbt-millimeter-wave-integrated-circuit-mmic-components-for-dc-300-ghz-frequency-range
Broadband InP DHBT Millimeter-wave Integrated Circuit (MMIC) Components for DC-300 GHz Frequency Range Tanjil ShivanFerdinand-Braun-Institut, Berlin
Chalmers GaN HEMT Charge Model – Revisited
/en/research/research-news/chalmers-gan-hemt-charge-model-revisited
The Chalmers model is one of the frequently used and well-known GaN HEMT models, featuring two implementations of capacitive effects: the capitance and the charge-based model. To achieve more precise…
ASM GaN: New Industry Standard Compact Model for GaN RF and Power Devices
/en/media-center/press-releases/asm-gan-new-industry-standard-compact-model-for-gan-rf-and-power-devices
ASM GaN: New Industry Standard Compact Model for GaN RF and Power Devices Prof. Sourabh KhandelwalMacquarie University, Sydney
ISLC 2018
/en/events/islc-2018
The 26. International Semiconductor Laser Conference is dedicated to latest developments in semiconductor lasers, amplifiers and LEDs - with several FBH contributions.
Breakthrough in neutron backscattering spectroscopy: A tenfold enhanced energy resolution using GaAs
/en/research/research-news/breakthrough-in-neutron-backscattering-spectroscopy-a-tenfold-enhanced-energy-resolution-using-gaas
Breakthrough in neutron backscattering spectroscopy: A tenfold enhanced energy resolution using GaAs Dr. Kristijan KuhlmannFriedrich-Alexander University Erlangen-Nürnberg and Institut…