Joint Lab InP Devices

Technically, the terahertz range (0.1 - 3 THz) in the electromagnetic spectrum below the optical frequencies is currently largely unexplored. Electronic components beyond 100 GHz are commercially available only very rarely. Therefore, the activities of our Joint Lab InP Devices aim at providing terahertz electronic technology for very high frequency integrated circuits (MMIC) – using our InP-HBT process and InP-on-BiCMOS heterointegration. The Lab relies on the complementary infrastructures of FBH and the University of Duisburg Essen to specifically translate fundamental materials research – with a focus on indium phosphide (InP) – into applied circuits and modules.

Transfer substrate wafer with InP-on-BiCMOS circuits