We design and realize customized diode lasers in the wavelength range from 0.62 µm to 1.18 µm based on gallium arsenide (GaAs) III-V semiconductor layer structures in our Optoelectronics Department. Our focus is on increasing their output power, efficiency, beam quality and reliability. FBH diode lasers are used in a wide range of applications, from materials processing, solid-state laser pumping, metrology, medicine, nonlinear optics, display technology and sensor technology to quantum technologies and space applications.
Our focus for gallium nitride (GaN)-based diode lasers is currently on emission wavelengths from 0.40 µm to 0.42 µm. We are developing UV light-emitting diodes (LEDs) especially for the UVB and UVC spectral range. For the device packaging we use our well-established mounting and assembly technology.