THz Imaging with Transistor Detectors
We develop THz detectors based on plasmonic and resistive effects in GaN-HEMT technology for frequencies up to 2500 GHz - as narrow-band and wideband THz detectors. We also realize high-performance THz detector arrays and THz camera systems with integrated read-out electronics. All these developments are based on FBH's GaN-HEMT microwave process. In cooperation with the Goethe-Leibniz-Terahertz-Center, we have developed THz detectors with record performance in the 500 GHz - 2500 GHz range with integrated antennas and monolithic arrays.
The THz detectors exhibit very high sensitivity and a record optical noise equivalent power (NEP) performance of 26 pW/√Hz at 500 GHz with a bandwidth of 1000 GHz for individual detectors and detecor arrays.
In this project an imaging demonstrator system will be realized for conveyor-based industrial applications with highest sensitivity and improved noise characteristics of the THz detector arrays. It should demonstrate the added value of the system to interested industrial customers in the THz spectral range as compared to established technologies in the visible or infrared spectral range.
The sensor demonstrator system will be multi-purpose and will be able to operate in both transmission and reflection modes. In addition, imaging for 2D and 3D reconstruction will be implemented in order to demonstrate image reconstruction beyond hardware realization. This will demonstrate the full potential of the THz spectral range.
Further information: adam.raemer(at)fbh-berlin.de