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Facts & Figures

View on FBH building

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH)
Gustav-Kirchhoff-Straße 4, 12489 Berlin
Phone +49 30 63922600
Email fbh(at)fbh-berlin.de
Web www.fbh-berlin.de

Management

Prof. Dr.-Ing. Patrick Scheele (Scientific Managing Director)
phone +49 30 634922601, patrick.scheele(at)fbh-berlin.de

Dr. Karin-Irene Eiermann (Administrative Managing Director)
Tel. +49 30 639258003, irene.eiermann(at)fbh-berlin.de

1992   founded

member of the Leibniz Association

400   Employees

including 200 scientists,
30 student assistants

44.5   MM € Revenue (2024)

€19.6 million basic funding
€20.9 million public third-party funding
€4.0 million industrial contracts

Research Topics & Competencies

  • Center of competence for III-V semiconductors – one of the most capable and major businesses in this field in Europe
  • Applied research and development of microwave and optoelectronic devices

Photonics

  • high-power diode lasers: broad area & bars
  • high-brightness & narrowband diode lasers
  • hybrid laser modules (cw & pulsed): from NIR to UV spectral range, e.g. for biophotonics, laser sensors, …
  • nitride laser diodes for the blue & UV spectral range
  • short-wave UV LEDs, e.g. for sensors, disinfection, medical & production technology, …

Integrated Quantum Technology 

  • electro-optical components & hybrid micro-integrated modules
  • integrated quantum sensors based on atomic gases
  • quantum light for photonic quantum sensing & quantum communication
  • nanostructured diamond systems & materials
  • quantum emitters & nanofabricated optical waveguide chips

III-V Electronics 

  • GaN microwave transistors, MMICs & frontends
  • advanced power amplifier concepts for the wireless infrastructure, radar & space applications
  • integrated circuits with InP HBTs for the 100…500 GHz frequency range
  • high-speed drivers for laser diodes & broadband optoelectronic transceivers
  • power electronics based on GaN, Ga2O3 & AlN
  • THz transistor detectors, scanners & arrays for imaging

III-V Technology 

  • epitaxy (MOVPE) of GaAs- & GaN-based layer structures for devices
  • in situ control techniques for MOVPE
  • complete process line for GaAs, InP, GaN, AlN & SiC devices on 2" - 4" wafers (expansion up to 200 mm) & wafer parts 
  • InP HBT technology for mm-wave & THz applications, hetero-integrated SiGe-BiCMOS/InP-HBT foundry offered within APECS
  • mounting & assembly

Outreach

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Prototype Engineering

functionally-efficient models & prototypes for system applications
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Innovation & Technology Transfer

technology transfer & research management, training & securing skilled personnel
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Spin-offs

12 spin-offs, most of which are still active today

Partner of

  • Technische Universität Berlin
  • Humboldt-Universität zu Berlin
  • Goethe-Universität Frankfurt am Main
  • Universitäy of Duisburg-Essen
  • Brandenburg University of Technology Cottbus-Senftenberg
  • Research Fab Microelectronics Germany (FMD)
  • Zwanzig20 consortium „Advanced UV for Life“ (coordinated by FBH)
  • iCampµs
  • Photonics Cluster Berlin Brandenburg
  • ...