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Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling
/en/research/publications/logarithmic-trapping-and-detrapping-in-beta-ga2o3-mosfets-experimental-analysis-and-modeling
In this paper, we extensively characterize and model the threshold voltage instability in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric. Specifically, (i) the results indicate that the…
Passively Q-switched microchip laser based picosecond light source in the visible-red to near-infrared band for semiconductor excitation
/en/research/publications/passively-q-switched-microchip-laser-based-picosecond-light-source-in-the-visible-red-to-near-infrared-band-for-semiconductor-excitation
We developed a visible-red to near-infrared wavelength tunable all-solid-state laser system utilizing an optical parametric generation process in a MgO doped PPLN crystal pumped at 532 nm by an…
Coordination and organometallic precursors of group 10 and 11: Focused electron beam induced deposition of metals and insight gained from chemical vapour deposition, atomic layer deposition, and fundamental surface and gas phase studies
/en/research/publications/coordination-and-organometallic-precursors-of-group-10-and-11-focused-electron-beam-induced-deposition-of-metals-and-insight-gained-from-chemical-vapour-deposition-atomic-layer-deposition-and-fundamental-surface-and-gas-phase-studies
Nanostructured materials made from group 10 (Ni, Pd, Pt) and group 11 (Cu, Ag, Au) elements have outstanding technological relevance in microelectronics, nano-optics, catalysis, and energy…
Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters
/en/research/publications/spectrally-pure-far-uvc-emission-from-algan-based-leds-with-dielectric-band-pass-filters
AlGaN-based far ultraviolet-C (UVC) light emitting diodes (LEDs) with a peak emission wavelength below 240 nm typically show a long-wavelength tail at >240 nm that is detrimental to the use…
Continuous-wave operation of 405 nm distributed Bragg reflector laser diodes based on GaN using 10th-order surface gratings
/en/research/publications/continuous-wave-operation-of-405-nm-distributed-bragg-reflector-laser-diodes-based-on-gan-using-10th-order-surface-gratings
Single longitudinal mode continuous-wave operation of GaN-based distributed Bragg reflector (DBR) laser diodes with 10th-order surface gratings is demonstrated. The DBR consists of periodic V-shaped…
60% Efficient Monolithically Wavelength-Stabilized 970-nm DBR Broad-Area Lasers
/en/research/publications/60-efficient-monolithically-wavelength-stabilized-970-nm-dbr-broad-area-lasers
Progress in epitaxial design is shown to enable increased optical output power Popt and power conversion efficiency ηE and decreased lateral far-field divergence angle in GaAs-based distributed…
Optimizing Vertical and Lateral Waveguides of kW-Class Laser Bars for Higher Peak Power, Efficiency and Lateral Beam Quality
/en/research/publications/optimizing-vertical-and-lateral-waveguides-of-kw-class-laser-bars-for-higher-peak-power-efficiency-and-lateral-beam-quality
GaAs-based, highly-efficient, kW-class, 1-cm laser bars with high peak power Popt and improved beam quality in quasi-continuous-wave mode are presented. The use of an extreme-triple-asymmetric (ETAS)…
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin
/en/research/publications/enhanced-light-extraction-efficiency-of-uv-leds-by-encapsulation-with-uv-transparent-silicone-resin
Increase of light extraction efficiency (LEE) and total output power of UV light emitting diodes (LEDs) emitting at 265 and 310 nm, respectively, after encapsulation with a UV-transparent silicone…
Stability of ZnSe-Passivated Laser Facets Cleaved in Air and in Ultra-High Vacuum
/en/research/publications/stability-of-znse-passivated-laser-facets-cleaved-in-air-and-in-ultra-high-vacuum-1
Catastrophic optical mirror damage (COMD) is one of the main failure mechanisms limiting the reliability of GaAs based laser diodes. Here, we compare the facet stability of ZnSe-passivated…
A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology
/en/research/publications/a-300-ghz-frequency-doubler-in-transferred-substrate-inp-dhbt-technology
A 300 GHz frequency doubler in transferred-substrate InP DHBT technology is presented. The frequency doubler has an unbalanced single ended topology and employs reflector networks for high…