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Current Status of Carbon-Related Defect Luminescence in GaN
/en/research/publications/current-status-of-carbon-related-defect-luminescence-in-gan
Highly insulating layers are a prerequisite for gallium nitride (GaN)-based power electronic devices. For this purpose, carbon doping is one of the currently pursued approaches. However, its impact…
Compact 12×12-Pixel THz Camera using AlGaN/GaN HEMT Technology Operating at Room Temperature
/en/research/publications/compact-12x12-pixel-thz-camera-using-algangan-hemt-technology-operating-at-room-temperature
We report on a THz detector camera with a monolithically integrated 12×12 detector array of AlGaN/GaN TeraFETs. The camera operates in the range 100 GHz - 2 THz and is the first of…
An Efficient 400 GHz Active Multiplier-Based Signal Source for Terahertz Applications
/en/research/publications/an-efficient-400-ghz-active-multiplier-based-signal-source-for-terahertz-applications
This paper presents a 400 GHz signal source using a 0.8 µm transferred substrate (TS) InP-HBT technology. The signal source is based on an active balanced doubler and delivers…
Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam
/en/research/publications/spatially-controlled-epitaxial-growth-of-2d-heterostructures-via-defect-engineering-using-a-focused-he-ion-beam
The combination of two-dimensional (2D) materials into heterostructures enables the formation of atomically thin devices with designed properties. To achieve a high-density, bottom-up integration,…
Temperature Dependence of Dark Spot Diameters in GaN and AlGaN
/en/research/publications/temperature-dependence-of-dark-spot-diameters-in-gan-and-algan-1
Threading dislocations in c-plane (Al,Ga)N layers are surrounded by areas with reduced light generation efficiency, called "dark spots." These areas are observable in luminescence…
Study on the Optimization of the Common Source Inductance for GaN Transistors
/en/research/publications/study-on-the-optimization-of-the-common-source-inductance-for-gan-transistors-1
Optimization of the common source inductance of GaN-based transistors is investigated in this paper concerning different design levels, namely bond wires, package layout and PCB layout. The impact of…
Progress in High Power Diode Laser Pumps for High-Energy Class Mid Infra-Red Lasers
/en/research/publications/progress-in-high-power-diode-laser-pumps-for-high-energy-class-mid-infra-red-lasers
Epitaxial design development in 780 nm diode lasers for lower loss and lower bias-driven leakage enables increases in power (to 210 W) and conversion efficiency (to 57% at 60 W) in…
Highly Asymmetric Epitaxial Designs for Increased Power and Efficiency in kW-Class GaAs-Based Diode Laser Bars
/en/research/publications/highly-asymmetric-epitaxial-designs-for-increased-power-and-efficiency-in-kw-class-gaas-based-diode-laser-bars
1-cm single quantum well laser bars at 910-940nm wavelengths are presented, using extremely asymmetric layer designs for increased power. In quasi-CW testing, bars with 4mm resonators provide output…
Stability of ZnSe-passivated laser facets cleaved in air and in ultra-high vacuum
/en/research/publications/stability-of-znse-passivated-laser-facets-cleaved-in-air-and-in-ultra-high-vacuum
Single-mode 1064 nm ridge-waveguide lasers with double and triple quantum wells are used to compare the facet stability of ultra-high vacuum cleaved and ZnSe-passivated lasers with air-cleaved,…
Investigations on Operational Reliability of 808 nm QCW Laser Diode Half-Bars for Space-Borne Applications
/en/research/publications/investigations-on-operational-reliability-of-808-nm-qcw-laser-diode-half-bars-for-space-borne-applications
Laser diode half-bars with 16 emitters were manufactured and qualified for pulsed high-power operation on the satellite MERLIN. Stress accelerated life tests of 20 laser half-bars were performed for…