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970 nm DBR Broad-Area Semiconductor Lasers with 60% Conversion Efficiency
/en/research/publications/970-nm-dbr-broad-area-semiconductor-lasers-with-60-conversion-efficiency
Progress in epitaxial design to enhance power and efficiency of spectrally-stabilized broad-area lasers at operating wavelength 970nm is presented. 200µm wide and 4mm long DBR lasers with a…
Diode Lasers with Internal Wavelength Stabilization for LiDAR Applications
/en/research/publications/diode-lasers-with-internal-wavelength-stabilization-for-lidar-applications
The development of diode lasers with internal wavelength stabilization and powered by inhouse electrical drivers generating 2ns to 10ns long electrical pulses is reviewed. Different power classes…
The impact of longitudinal spatial hole burning on the carrier density profile in high-power lasers
/en/research/publications/the-impact-of-longitudinal-spatial-hole-burning-on-the-carrier-density-profile-in-high-power-lasers
Spatially resolved spontaneous emission intensity and spectrum were used to demonstrate the longitudinal-spatial-hole-burning (LSHB)-induced non-uniform carrier density along the resonator in high…
Internally wavelength stabilized GaAs-based diode lasers with epitaxially-stacked multiple active regions and tunnel junctions for LiDAR applications
/en/research/publications/internally-wavelength-stabilized-gaas-based-diode-lasers-with-epitaxially-stacked-multiple-active-regions-and-tunnel-junctions-for-lidar-applications
We present a bipolar-cascade distributed-Bragg reflector laser emitting near 905 nm with a high slope efficiency. The wavelength stabilization by a surface grating was achieved by placing three…
Efficiency optimization of high-power GaAs lasers by balancing confinement and threshold
/en/research/publications/efficiency-optimization-of-high-power-gaas-lasers-by-balancing-confinement-and-threshold
Studies balancing modal gain (confinement) and facet reflectivity in high power 940 nm lasers using extreme-triple-asymmetric epitaxial designs enable > 70% efficiency at 12 W…
Narrow lateral far field divergence obtained with spatially modulated broad-area lasers
/en/research/publications/narrow-lateral-far-field-divergence-obtained-with-spatially-modulated-broad-area-lasers
A laser design combining longitudinal-lateral gain-loss modulation with additional phase tailoring is presented. Under pulsed operation simulations predict a single-lobed far field angle of…
Theoretical Study of the Behavior of a DBR Laser Subject to External Optical Feedback
/en/research/publications/theoretical-study-of-the-behavior-of-a-dbr-laser-subject-to-external-optical-feedback-1
We report results of the theoretical study of the dynamic properties of distributed Bragg reflector (DBR) lasers subject to an external optical feedback provided by a longdistance mirror. We adapt…
Opticlock: Transportable and easy-to-operate optical single-ion clock
/en/research/publications/opticlock-transportable-and-easy-to-operate-optical-single-ion-clock
We report on a transportable and easy-to-operate optical clock utilizing the 2S1/2 - 2D3/2 transition of a single trapped 171Yb+ ion at 436 nm. Developed within a pilot project for quantum…
Compact Stacked Rugged GaN Low-Noise Amplifier MMIC
/en/research/publications/compact-stacked-rugged-gan-low-noise-amplifier-mmic
Rugged GaN HEMT LNAs are well established components for high-performance microwave receivers. In a previous work, we introduced the concept of a stacked circuit topology, which allows for a power…
Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing
/en/research/publications/role-of-oxygen-diffusion-in-the-dislocation-reduction-of-epitaxial-aln-on-sapphire-during-high-temperature-annealing
Recovery of epitaxial AlN films on sapphire at high temperatures is now an established process to produce pseudo-substrates with high crystalline perfection, which can be used to grow epitaxial…