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Growth of compressively strained GaxIn1−xAsyP1−y quantum wells for 690–730 nm laser emission
/en/research/publications/growth-of-compressively-strained-gaxin1xasyp1y-quantum-wells-for-690-730-nm-laser-emission-1
AlxGa1−xAs-based lasers are typically used for emission wavelengths of 730 nm and above, e.g. using GaAsyP1−y quantum wells (QW), while lasers emitting below 700 nm rely on…
Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
/en/research/publications/strain-induced-power-enhancement-of-far-uvc-leds-on-high-temperature-annealed-aln-templates-1
High temperature annealed AlN/sapphire templates exhibit a reduced in-plane lattice constant compared to conventional non-annealed AlN/sapphire grown by metalorganic vapor phase epitaxy (MOVPE). This…
Influence of vacuum chamber port terminations on beam coupling impedances
/en/research/publications/influence-of-vacuum-chamber-port-terminations-on-beam-coupling-impedances-1
Vacuum chambers of particle accelerators are typically equipped with radio-frequency couplers. The couplers are employed to excite modes for particle acceleration, to extract the energy of…
Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN
/en/research/publications/effects-of-post-metallization-annealing-on-al2o3-atomic-layer-deposition-on-n-gan-1
The chemical, physical and electrical properties and the robustness of post metallization annealed Al2O3 atomic layers deposited on n-type GaN are investigated in this work. Planar metal insulator…
Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing
/en/research/publications/increased-light-extraction-of-thin-film-flip-chip-uvb-leds-by-surface-texturing
Ultraviolet light-emitting diodes (LEDs) suffer from a low wall-plug efficiency, which is to a large extent limited by the poor light extraction efficiency (LEE). A thin-film flip-chip (TFFC) design…
Suppression of particle formation by gas- phase pre-reactions in (100) MOVPE-grown β- Ga2O3 films for vertical device application
/en/research/publications/suppression-of-particle-formation-by-gas-phase-pre-reactions-in-100-movpe-grown-b-ga2o3-films-for-vertical-device-application
This work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga2O3 films with the aim of meeting the requirements to act as drift layers for high-power electronic devices. A…
Extensive study of magneto-optical and optical properties of Cd1−xMnxTe between 675 and 1025 nm
/en/research/publications/extensive-study-of-magneto-optical-and-optical-properties-of-cd1xmnxte-between-675-and-1025-nm-1
We determine Faraday rotations and measure the optical reflection and transmission from magneto-optical Cd1−xMnxTe crystals with various stoichiometric ratios. For wavelengths between 675 and…
Switchable thermal waveguides in GaAs based devices
/en/research/publications/switchable-thermal-waveguides-in-gaas-based-devices
The modulation of light within microscopic devices is the key to designing versatile and powerful photonic integrated circuits (PICs). Contemporary techniques are able to generate a wide range of…
Picosecond pulses with 40 W peak power from a passively mode-locked tapered quantum well laser
/en/research/publications/picosecond-pulses-with-40-w-peak-power-from-a-passively-mode-locked-tapered-quantum-well-laser
In this letter, the authors present a monolithic edge emitting diode laser intended as a potential key component for the generation of terahertz radiation in a compact time-domain spectroscopy…
Impact of the capture time on power saturation of quantum-well diode lasers
/en/research/publications/impact-of-the-capture-time-on-power-saturation-of-quantum-well-diode-lasers
Injected electrons and holes are captured into quantum wells with a non-vanishing time. Simulation results are presented, showing that this results in a non-equilibrium of free and bound carriers in…