Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
A 4 GHz Digital Class-E Outphasing PA
/en/research/publications/a-4-ghz-digital-class-e-outphasing-pa
This paper presents for the first time a GaN-based digital class-E outphasing power amplifier (PA) for 5G applications in the 4 GHz range. The amplifier consists of two digital PA MMICs with a…
An Injection-Lockable InP-DHBT Source Operating at 421 GHz with -2.4 dBm Output Power and 1.7% DC-to-RF Efficiency
/en/research/publications/an-injection-lockable-inp-dhbt-source-operating-at-421-ghz-with-24-dbm-output-power-and-17-dc-to-rf-efficiency
In this work, an injection-lockable push-push oscillator operating at 421 GHz is presented. The circuit is based on a 0.5 µm transferred substrate InP DHBT MMIC process. A peak output…
Pioneering evaluation of GaN transistors in geostationary satellites
/en/research/publications/pioneering-evaluation-of-gan-transistors-in-geostationary-satellites
In this paper, we present the results of a 6-year experiment in space that studied the effects of radiation in Gallium Nitride (GaN) electronics in geostationary orbit. Four GaN transistors in a…
The influence of skin barrier disruption and melanin content on the formation of DNA lesions and radicals in ex vivo human skin induced by 233 nm far-UVC irradiation from LEDs
/en/research/publications/the-influence-of-skin-barrier-disruption-and-melanin-content-on-the-formation-of-dna-lesions-and-radicals-in-ex-vivo-human-skin-induced-by-233-nm-far-uvc-irradiation-from-leds
As reported recently, 233 nm radiation emitted by a spectrally pure UVC LED source shows sufficient bactericidal properties at an applied dose between 20 and 80 mJ/cm2. In ex vivo human skin and…
Characteristics of monolithic multisection distributed-Bragg-reflector master-oscillator power-amplifiers
/en/research/publications/characteristics-of-monolithic-multisection-distributed-bragg-reflector-master-oscillator-power-amplifiers
We report theoretical results on the wavelength stability of a multisection master-oscillator power-amplifier emitting at 1064 nm. We use a traveling wave equation model to calculate the optical…
Ridge waveguide lasers with vertically stacked quantum wells and tunnel junctions
/en/research/publications/ridge-waveguide-lasers-with-vertically-stacked-quantum-wells-and-tunnel-junctions
We report on the fabrication and electro-optical performance of ridge waveguide (RW) lasers emitting near 905 nm based on a vertical layer structure consisting of three single quantum wells…
Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning
/en/research/publications/low-threshold-algan-based-uvb-vcsels-enabled-by-post-growth-cavity-detuning
The performance of vertical-cavity surface-emitting lasers (VCSELs) is strongly dependent on the spectral detuning between the gain peak and the resonance wavelength. Here, we use angle-resolved…
Portable shifted excitation Raman difference spectroscopy for on-site soil analysis
/en/research/publications/portable-shifted-excitation-raman-difference-spectroscopy-for-on-site-soil-analysis
On-site soil analysis in the framework of precision agriculture is gaining significant importance to achieve improved crop productivity, increased soil health and reduced fertilizer application. In…
Modeling of Hot-Via Technology for System-in-Package at Millimeter-wave Frequencies
/en/research/publications/modeling-of-hot-via-technology-for-system-in-package-at-millimeter-wave-frequencies
Hot via technology plays an important role for system integration at millimeter-wave frequencies. Accurate prediction of the parasitics is necessary to ensure proper impedance matching for system…
Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperature
/en/research/publications/electrical-properties-and-microstructure-of-valniau-contacts-on-n-al065ga035nsi-with-different-au-thicknesses-and-annealing-temperature
We investigated the formation of ohmic contacts as a result of intermetallic phase formation between V, Al, Ni, and Au in V/Al/Ni/Au metal stacks on n-Al0.65Ga0.35N:Si. In particular, the influence…