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Deep learning based visual inspection of facets and p-sides for efficient quality control of diode lasers
/en/research/publications/deep-learning-based-visual-inspection-of-facets-and-p-sides-for-efficient-quality-control-of-diode-lasers
Deep learning based visual inspection of facets and p-sides for efficient quality control of diode lasers C. Zinka, M. Ekteraia, D. Martina, W. Clemensb, A. Maennelb,…
Single mode 660 nm DBR tapered laser with 1 W optical output power
/en/research/publications/single-mode-660-nm-dbr-tapered-laser-with-1-w-optical-output-power
Single mode 660 nm DBR tapered laser with 1 W optical output power G. Blume, O. Matalla, H. Wenzel, A. Maaßdorf, D. Feise, J. Fricke, P. Ressel,…
Pilot investigations on solids, liquids and gases using a portable shifted excitation Raman difference spectroscopy sensor system
/en/research/publications/pilot-investigations-on-solids-liquids-and-gases-using-a-portable-shifted-excitation-raman-difference-spectroscopy-sensor-system
Pilot investigations on solids, liquids and gases using a portable shifted excitation Raman difference spectroscopy sensor system M. Maiwald, K. Sowoidnich, B. Sumpf …
Technology roadmap for cold-atoms based quantum inertial sensor in space
/en/research/publications/technology-roadmap-for-cold-atoms-based-quantum-inertial-sensor-in-space
Recent developments in quantum technology have resulted in a new generation of sensors for measuring inertial quantities, such as acceleration and rotation. These sensors can exhibit unprecedented…
Gallium Phosphide Nanowires Grown on SiO2 by Gas-Source Molecular Beam Epitaxy
/en/research/publications/gallium-phosphide-nanowires-grown-on-sio2-by-gas-source-molecular-beam-epitaxy
GaP as one of the III–V semiconductors has an indirect band gap in its natural zinc-blend (ZB) crystal phase, limiting its applications in optoelectronics. The atomic arrangements of the ZB GaP,…
Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs
/en/research/publications/impact-of-mg-doping-on-the-performance-and-degradation-of-algan-based-uv-c-leds
We investigate the impact of Mg-doping on the performance and degradation kinetics of AlGaN-based UV-C light-emitting diodes (LEDs). By comparing LEDs from three wafers with different nominal doping…
Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs
/en/research/publications/temperature-dependent-electroluminescence-of-stressed-and-unstressed-inalgan-multi-quantum-well-uvb-leds
The electroluminescence of UVB light-emitting diodes emitting at 310 nm before and after 1000 h of operation is studied in the temperature range from 20 to 340 K. Before operation, the…
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
/en/research/publications/modeling-the-electrical-degradation-of-algan-based-uv-c-leds-by-combined-deep-level-optical-spectroscopy-and-tcad-simulations
The long-term stability of ultraviolet (UV)-C light-emitting diodes (LEDs) is of major importance for many applications. To improve the understanding in this field, we analyzed the degradation of…
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
/en/research/publications/degradation-of-algan-based-uv-c-sqw-leds-analyzed-by-means-of-capacitance-deep-level-transient-spectroscopy-and-numerical-simulations
The lifetime of deep-ultraviolet light-emitting diodes (LEDs) is still limited by a number of factors, which are mainly related to semiconductor defects, and still need to be clarified. This paper…
234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer
/en/research/publications/234-nm-far-ultraviolet-c-light-emitting-diodes-with-polarization-doped-hole-injection-layer
Far-ultraviolet-C (far-UVC) light-emitting diodes (LEDs) with an emission wavelength of 234 nm with different polarization-doped AlGaN hole injection layers (HILs) are compared regarding their…