Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
High Power Distributed Bragg Reflector Lasers at 689.45 nm for Quantum Technology Applications
/en/research/publications/high-power-distributed-bragg-reflector-lasers-at-68945-nm-for-quantum-technology-applications
Distributed Bragg Reflector semiconductor lasers are ideally suited for quantum technology applications due to their high efficiency, small footprint, and tunability in combination with the frequency…
Tripling the light extraction efficiency of a deep ultraviolet LED using a nanostructured p-contact
/en/research/publications/tripling-the-light-extraction-efficiency-of-a-deep-ultraviolet-led-using-a-nanostructured-p-contact
Despite a wide array of applications, deep ultra-violet light emitting diodes offer relatively poor efficiencies compared to their optical counterparts. A contributing factor is the lower light…
Refractory metal-based ohmic contacts on β-Ga2O3 using TiW
/en/research/publications/tripling-the-light-extraction-efficiency-of-a-deep-ultraviolet-led-using-a-nanostructured-p-contact-1
The present work investigates the use of the refractory metal alloy TiW as a possible candidate for the realization of ohmic contacts to the ultrawide bandgap semiconductor β-Ga2O3. Ohmic…
In situ control of indium incorporation in (AlGa)1-xInxP layers
/en/research/publications/in-situ-control-of-indium-incorporation-in-alga1-xinxp-layers
Metalorganic vapor phase epitaxy growth of red emitting laser structures based on (AlGa)1-xInxP (AlGaInP) compounds requires thorough control of In incorporation during growth of AlGaInP layers which…
Phase Noise Reduction in Semiconductor Optical Amplifiers using Low-Index Quantum Barrier Structures
/en/research/publications/phase-noise-reduction-in-semiconductor-optical-amplifiers-using-low-index-quantum-barrier-structures
The phase noise caused by current fluctuations in single-pass semiconductor optical amplifiers is experimentally investigated. Using low-index quantum barrier designs in prototype devices is found to…
Distributed Bragg Reflector Lasers at 689.45 nm for Sr Spectroscopy
/en/research/publications/distributed-bragg-reflector-lasers-at-68945-nm-for-sr-spectroscopy
We present distributed Bragg reflector lasers optimized for strontium-based quantum technology applications at 689.449 nm. The devices achieved optical output powers up to 88 mW, four times…
A UV-C LED-based unit for continuous decontamination of the sheath fluid in a flow-cytometric cell sorter
/en/research/publications/a-uv-c-led-based-unit-for-continuous-decontamination-of-the-sheath-fluid-in-a-flow-cytometric-cell-sorter
Aseptic cell sorting is challenging, especially when a flow-cytometric cell sorter is not operated in a sterile environment. The sheath fluid system of a cell sorter may be contaminated with germs…
The Influence of a Residual Reflectivity at the Front Facet of a Multisection Master-Oscillator Power-Amplifier
/en/research/publications/the-influence-of-a-residual-reflectivity-at-the-front-facet-of-a-multisection-master-oscillator-power-amplifier
This paper reports on the theoretical end experimental investigation of the output characteristics of a multisection master-oscillator power-amplifier (MOPA). It consists of a master oscillator (MO)…
Impedance minimization of the CERN Super Proton Synchrotron cavities using the generalized coupled S-parameter method
/en/research/publications/impedance-minimization-of-the-cern-super-proton-synchrotron-cavities-using-the-generalized-coupled-s-parameter-method
In the context of the Large Hadron Collider (LHC) injector upgrade, components with high contribution to the beam coupling impedance of the injector chain have to be identified and optimized to…
On the Influence of Transistor Dimensions on the Dispersive Behavior in AlGaN/GaN HEMT-Based PAs and Robust LNAs
/en/research/publications/on-the-influence-of-transistor-dimensions-on-the-dispersive-behavior-in-algangan-hemt-based-pas-and-robust-lnas-1-1
Trap-induced dispersive effects play an important role in PAs and robust LNAs based on AlGaN/GaN-HEMTs. In this paper, the influence of scaling gate-source (GS) and gate-drain (GD) separation is…