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Efficiency optimization of ridge waveguide amplifiers at 1122 nm
/en/research/publications/efficiency-optimization-of-ridge-waveguide-amplifiers-at-1122-nm
Efficiency optimization of ridge waveguide amplifiers at 1122 nm N. Werner, M. Triebkorn, A. Ginolas, S. Kreutzmann, P. Hildenstein, K. Paschke, G. Tränkle …
Reliable operation of 1064 nm DBR tapered lasers and monolithic master oscillator tapered amplifiers at output powers up to 7 W
/en/research/publications/reliable-operation-of-1064-nm-dbr-tapered-lasers-and-monolithic-master-oscillator-tapered-amplifiers-at-output-powers-up-to-7-w
Reliable operation of 1064 nm DBR tapered lasers and monolithic master oscillator tapered amplifiers at output powers up to 7 W B. Sumpf, C. Zink, A. Maaßdorf, J. Fricke,…
Investigation of distributed Bragg reflectors tapered-ridge-waveguide lasers under nanosecond high pulse current excitation
/en/research/publications/investigation-of-distributed-bragg-reflectors-tapered-ridge-waveguide-lasers-under-nanosecond-high-pulse-current-excitation
Investigation of distributed Bragg reflectors tapered-ridge-waveguide lasers under nanosecond high pulse current excitation H. Christopher, M. Beier, J. Fricke, J. Glaab,…
Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters
/en/research/publications/mechanisms-limiting-the-operation-time-of-uvb-alingan-quantum-well-light-emitters
Mechanisms limiting the operation time of UVB Al(In)GaN quantum well light emitters J.W. Tomma, J. Ruschelb, H.K. Chob, S. Einfeldtb a Max–Born–Institut für Nichtlineare…
Comparison of micro-integrated dual-wavelength master oscillator power amplifiers at 785 nm
/en/research/publications/comparison-of-micro-integrated-dual-wavelength-master-oscillator-power-amplifiers-at-785-nm
Comparison of micro-integrated dual-wavelength master oscillator power amplifiers at 785 nm A. Müller, M. Maiwald, B. Sumpf Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für…
Comparison of dual-wavelength Y-branch DBR single chip diode lasers and diode laser arrays at 785 nm
/en/research/publications/comparison-of-dual-wavelength-y-branch-dbr-single-chip-diode-lasers-and-diode-laser-arrays-at-785-nm
Comparison of dual-wavelength Y-branch DBR single chip diode lasers and diode laser arrays at 785 nm L.S. Theurer, M. Maiwald, A. Müller, J. Fricke, A. Knigge,…
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy
/en/research/publications/degradation-of-algan-based-sqw-uv-c-leds-investigated-by-capacitance-deep-level-transient-spectroscopy
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy F. Piva1, M. Buffolo1, C. De Santi1, M. Pilati1, N. Roccato1,…
Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency
/en/research/publications/buried-regrown-implant-structure-diode-lasers-with-ultra-thick-epitaxy-for-resistance-to-mounting-stress-without-loss-in-efficiency
Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency B. King, S. Arslan, A. Boni,…
Tailored in-plane thermal profiles for narrower lateral far-field in kilowatt-class 9xx nm diode laser bars
/en/research/publications/tailored-in-plane-thermal-profiles-for-narrower-lateral-far-field-in-kilowatt-class-9xx-nm-diode-laser-bars
Tailored in-plane thermal profiles for narrower lateral far-field in kilowatt-class 9xx nm diode laser bars Md.J. Miaha, M.M. Karowa, M. Elattara, D. Martina,…
9 W tapered laser diodes with high beam quality at 760 nm
/en/research/publications/9-w-tapered-laser-diodes-with-high-beam-quality-at-760-nm
9 W tapered laser diodes with high beam quality at 760 nm C. Mourikis, D. Feise, H. Wenzel, P. Della Casa, K. Paschke, G. Tränkle Ferdinand-Braun-Institut gGmbH,…