Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
635 nm tapered diode lasers with more than 2000 h operation at 500 mW output power
/en/research/publications/635-nm-tapered-diode-lasers-with-more-than-2000-h-operation-at-500-mw-output-power
635 nm tapered diode lasers with more than 2000 h operation at 500 mW output power K. Paschke, G. Blume, H. Wenzel, J. Pohl, M. Matalla, D. Feise, P. Ressel,…
Comparison of the electro-optical, spectral, and beam parameters of 785 nm DBR tapered lasers with different grating lengths
/en/research/publications/comparison-of-the-electro-optical-spectral-and-beam-parameters-of-785-nm-dbr-tapered-lasers-with-different-grating-lengths
Comparison of the electro-optical, spectral, and beam parameters of 785 nm DBR tapered lasers with different grating lengths B. Sumpf, L.S. Theurer, M. Maiwald, A. Müller,…
Investigation of astigmatism in tapered edge emitting diode amplifiers at 980 nm
/en/research/publications/investigation-of-astigmatism-in-tapered-edge-emitting-diode-amplifiers-at-980-nm
Investigation of astigmatism in tapered edge emitting diode amplifiers at 980 nm P. Hildenstein, N. Werner, K. Paschke, and G. Tränkle Ferdinand-Braun-Institut gGmbH,…
Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers
/en/research/publications/longitudinal-spatial-hole-burning-and-associated-non-uniform-current-and-carrier-density-profile-as-a-power-limit-in-high-power-diode-lasers
Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers S. Arslana, H. Wenzela, J. Frickea,…
Electrically wavelength adjustable DBR laser for background-free Raman spectroscopy at 785 nm
/en/research/publications/electrically-wavelength-adjustable-dbr-laser-for-background-free-raman-spectroscopy-at-785-nm
Electrically wavelength adjustable DBR laser for background-free Raman spectroscopy at 785 nm A. Müller, M. Maiwald and B. Sumpf Ferdinand-Braun-Institut gGmbH, Leibniz-Institut…
Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging
/en/research/publications/micro-electroluminescence-and-micro-photoluminescence-study-on-gan-based-laser-diode-aging
Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging L. Uhlig1, C. Becht1, E. Freier2, J.H. Kang2, V. Hoffmann2,…
Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs
/en/research/publications/conduction-properties-and-threshold-voltage-instability-in-beta-ga2o3-mosfets
Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs M. Fregolenta, E. Brusaterraa, C. De Santia, K. Tetznerb, J. Würflb,…
UV LED reliability: degradation mechanisms and challenges
/en/research/publications/uv-led-reliability-degradation-mechanisms-and-challenges
UV LED reliability: degradation mechanisms and challenges M. Meneghini1, F. Piva1, C. De Santi1, N. Trivellin1,2, M. Buffolo1, N. Roccato1, R. Brescancin1,…
Simulation of Optical Feedback Propagating through Tapered Amplifiers
/en/research/publications/simulation-of-optical-feedback-propagating-through-tapered-amplifiers
Simulation of Optical Feedback Propagating through Tapered Amplifiers N. Werner, P. Hildenstein, H. Wenzel, K. Paschke, and G. Tränkle Ferdinand-Braun-Institut gGmbH,…
Coherent beam combining progress on diode lasers and tapered amplifiers at 808 nm
/en/research/publications/coherent-beam-combining-progress-on-diode-lasers-and-tapered-amplifiers-at-808-nm
Coherent beam combining progress on diode lasers and tapered amplifiers at 808 nm C. Mourikisa, G. Blumea, A. Maaßdorfa, J. Frickea, K. Paschkea, G. Lucas-Leclinb…