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Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs
/en/research/publications/isolation-properties-and-failure-mechanisms-of-vertical-pt-n-gan-sbds
This paper reports on the isolation properties and failure mechanism of n-type vertical Pt / n-GaN Schottky barrier diodes and the dependence on the drift layer doping concentration. The results…
Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity
/en/research/publications/hybrid-integrated-mode-locked-laser-using-a-gaas-based-1064-nm-gain-chip-and-a-sin-external-cavity
External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers…
Distributed Bragg reflector lasers emitting between 696 and 712 nm
/en/research/publications/distributed-bragg-reflector-lasers-emitting-between-696-and-712-nm
The authors report on design, fabrication, and electro-optical characterization of single-frequency diode lasers emitting around 696, 707, and 712 nm. This has been achieved by a variation of…
Monolithically Integrated Extended Cavity Diode Laser with 32kHz 3dB Linewidth Emitting at 1064 nm
/en/research/publications/monolithically-integrated-extended-cavity-diode-laser-with-32khz-3db-linewidth-emitting-at-1064-nm
The spectral linewidth of semiconductor lasers is a crucial performance parameter in a growing number of applications. A common method to improve the coherence of the laser relies on increasing the…
2 kW Pulse Power from Internal Wavelength Stabilized Diode Laser Bar for LiDAR Applications
/en/research/publications/2-kw-pulse-power-from-internal-wavelength-stabilized-diode-laser-bar-for-lidar-applications
We present a bipolar-cascade distributed-Bragg-reflector laser bar with an intended wavelength of 905 nm emitting 8 ns long pulses with 2 kW peak power at a current slightly above…
High-brightness broad-area diode lasers with a novel enhanced self-aligned lateral structure
/en/research/publications/high-brightness-broad-area-diode-lasers-with-a-novel-enhanced-self-aligned-lateral-structure
We present broad-area lasers with enhanced self-aligned lateral structure (eSAS) using current-blocking layers optimized for tunnel current suppression, integrated within the p-AlGaAs cladding using…
Progress in efforts to increase power in GaAs-based high-power diode lasers
/en/research/publications/progress-in-efforts-to-increase-power-in-gaas-based-high-power-diode-lasers
Research into power-scaling in GaAs-based broad-area lasers is summarized, focusing on 940nm single emitters, increasing power by combining triply-asymmetric high-gain epitaxial designs with regrown…
Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect
/en/research/publications/fingerprints-of-carbon-defects-in-vibrational-spectra-of-gan-considering-the-isotope-effect
In this paper, we examine the carbon defects associated with peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon (12C) doping in the range of concentrations…
The optimal threading dislocation density of AlN template for micrometer-thick Al0.63Ga0.37N heteroepitaxy
/en/research/publications/the-optimal-threading-dislocation-density-of-aln-template-for-micrometer-thick-al063ga037n-heteroepitaxy
Growth of Si-doped AlN and of Al0.63Ga0.37N on high quality AlN templates grown by HVPE has been investigated. The strain state of Si-doped AlN is thickness-dependent due to the surface-mediated…
Capture Time as a Limit to Pulsed Power in 940 nm Broad Area Diode Lasers
/en/research/publications/capture-time-as-a-limit-to-pulsed-power-in-940-nm-broad-area-diode-lasers-1
Measurement and simulation of 940 nm lasers with strongly varied confinement factor in the quantum well are presented. The observed power saturation is little affected by confinement, instead…