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Search results 1601 until 1610 of 1745

New equipment for the separation of UV LEDs

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At FBH a new laser scriber and wafer breaker were brought into operation. They are designed for the requirements of sapphire and AlN machining.

GaN-on-Si wafer benchmarking for 600 V switching transistors

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FBH uses a standardized processing scheme for manufacturing GaN-based 600 V / 70 mΩ normally-off switching transistors for power-electronic applications. 4” GaN-on-Si wafers from different Japanese…

EFTF 2016

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FBH at the 30. European Frequency and Time Forum

Watt-level emission at 589 nm for biomedical applications

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Micro-integrated modules with a small footprint of a couple of square centimeters basing on semiconductor laser-chips enable a flexible, energy-saving as well as low-maintenance operation. Hence,…

International Microwave Symposium

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FBH presents several lectures at the IMS

VSWR Protection of Power Amplifiers Using BST Components

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To protect solid state power amplifiers against high voltage-standing-wave-ratios, the FBH explored a new approach using Barium-Strontium-Titanat (BST) components

Gallium Nitride Marathon

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At the Gallium Nitride Marathon and workshop on Gallium Nitride technology in Europe the FBH presents several lectures

Udo Pursche appointed professor

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FBH scientist Udo Pursche has been appointed Professor for RF and Microwave Technology at HTW Berlin.

Klein aber oho

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As information is usually given in German language, please switch to the German website.

Theoretical studies into limits to peak power in diode lasers

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Theoretical studies into limits to peak power in diode lasers Dr. Eugene AvrutinDepartment of Electronics, University of York