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GaN-on-Si wafer benchmarking for 600 V switching transistors
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FBH uses a standardized processing scheme for manufacturing GaN-based 600 V / 70 mΩ normally-off switching transistors for power-electronic applications. 4” GaN-on-Si wafers from different Japanese…
Watt-level emission at 589 nm for biomedical applications
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Micro-integrated modules with a small footprint of a couple of square centimeters basing on semiconductor laser-chips enable a flexible, energy-saving as well as low-maintenance operation. Hence,…
International Microwave Symposium
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FBH presents several lectures at the IMS
VSWR Protection of Power Amplifiers Using BST Components
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To protect solid state power amplifiers against high voltage-standing-wave-ratios, the FBH explored a new approach using Barium-Strontium-Titanat (BST) components
Gallium Nitride Marathon
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At the Gallium Nitride Marathon and workshop on Gallium Nitride technology in Europe the FBH presents several lectures
Udo Pursche appointed professor
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FBH scientist Udo Pursche has been appointed Professor for RF and Microwave Technology at HTW Berlin.
Klein aber oho
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As information is usually given in German language, please switch to the German website.
Theoretical studies into limits to peak power in diode lasers
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Theoretical studies into limits to peak power in diode lasers Dr. Eugene AvrutinDepartment of Electronics, University of York
Towards a CMOS-integrated laser based on strained Ge
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Towards a CMOS-integrated laser based on strained Ge Dr. Giovanni CapelliniIHP GmbH Leibniz-Institut für innovative Mikroelektronik