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Search results 1581 until 1590 of 4091

Switching behavior and dynamic on-resistance of lateral β-Ga2O3 MOSFETs up to 400 V

/en/research/publications/switching-behavior-and-dynamic-on-resistance-of-lateral-beta-ga2o3-mosfets-up-to-400nbspv-1

This paper studies switching behavior and dynamic on-state characteristics of lateral 10 mm depletion-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs). Improvements…

An X- to Ka-band Single-Pole-Double-Throw Switch with Good Power Handling Capability

/en/research/publications/an-x-to-ka-band-single-pole-double-throw-switch-with-good-power-handling-capability-1

In this paper, we present a single-pole-double-throw (SPDT) switch design covering X- to Ka-band using series-shunt topology. The stacked-FET configuration was adopted for the series- and shunt-arms…

Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals

/en/research/publications/atomic-surface-control-of-ge100-in-mocvd-reactors-coated-with-gaas-residuals

Heteroepitaxy of planar, low-defect III-V semiconductor layers on Ge(100) requires a single-domain substrate surface, where dimer rows are aligned in parallel on atomically well-ordered terraces,…

Quantification of losses in bent waveguides within DBR-RW laser diodes emitting at 785 nm

/en/research/publications/quantification-of-losses-in-bent-waveguides-within-dbr-rw-laser-diodes-emitting-at-785-nm

An experimental study of straight and bent distributed Bragg reflector (DBR) ridge waveguide (RW) lasers and Fabry–Pérot (FP) RW lasers emitting at 785 nm is presented. To determine the losses…

FBH, TRUMPF, LayTec, and Finetech Unite to Develop Cost-Effective High-Power Diode Laser Stacks

/en/media-center/media-review/fbh-trumpf-laytec-and-finetech-unite-to-develop-cost-effective-high-power-diode-laser-stacks

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), an application-oriented research institute in the fields of high-frequency electronics, photonics and quantum physics, has…

In vivo detection of changes in cutaneous carotenoids after chemotherapy using shifted excitation resonance Raman difference and fluorescence spectroscopy

/en/research/publications/in-vivo-detection-of-changes-in-cutaneous-carotenoids-after-chemotherapy-using-shifted-excitation-resonance-raman-difference-and-fluorescence-spectroscopy

Background: Various cutaneous toxicities under chemotherapy indicate a local effect of chemotherapy by secretion after systemic application. Here, changes in the fluorescence and Raman spectral…

Shifted-excitation Raman difference spectroscopy for the detection of SERS-encoded gold nanostar probes

/en/research/publications/shifted-excitation-raman-difference-spectroscopy-for-the-detection-of-sers-encoded-gold-nanostar-probes

In vivo applications of surface-enhanced Raman spectroscopy (SERS) have limited sensitivity due to the intense background signal from real-life complex samples such as plants and tissues. To overcome…

Kilowatt Power Amplifier With Improved Power Back-Off Efficiency for Cyclotron Application

/en/research/publications/kilowatt-power-amplifier-with-improved-power-back-off-efficiency-for-cyclotron-application

This article presents a highly efficient solid-state kilowatt level power amplifier implemented in laterally-diffused metal-oxide semiconductor (LDMOS) technology in a single-ended architecture. It…

An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT

/en/research/publications/an-efficient-drain-lag-model-for-microwave-gan-hemts-based-on-asm-hemt

Large-signal modeling of Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) demands a proper description of trapping effects. In this paper, a new, simplified yet accurate…

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes

/en/research/publications/snobeta-ga2o3-heterojunction-field-effect-transistors-and-vertical-p-n-diodes

In this work, we report on the realization of SnO/β-Ga2O3 heterojunction vertical diodes and lateral field-effect transistors for power electronic applications. The p-type semiconductor SnO is…