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Search results 1311 until 1320 of 1768

High-voltage lateral GaN Schottky diodes for high-speed power switching applications

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Highly efficient electrical power converters are indispensible for ecology-minded future electronic systems. Thus, Schottky diodes with lateral device topology have been developed at FBH which fully…

New THz on-wafer measurement facility enables FBH to measure frequencies up to 500 GHz

/en/research/research-news/new-thz-on-wafer-measurement-facility-enables-fbh-to-measure-frequencies-up-to-500-ghz

FBH acquired a new semi-automatic on-wafer characterization system enabling 500 GHz measurements. This system is ideally suited for on-wafer characterization in the frequency range beyond 100…

AlN layers with low dislocation density for UV LEDs

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FBH managed to reduce the dislocation density of AlN by more than one order of magnitude by the epitaxial lateral overgrowth of patterned AlN layers. Thus, the dislocation density of AlN layers can…

GaN HFETs with high current and high breakdown voltage using Si-doped AlGaN back barrier

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With a thin n-doped AlGaN layer under the channel FBH scientists significantly improved the trade-off between on-state resistance and breakdown voltage of GaN HFETs for power switching applications.

OpTecBB welcomes 100. member

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With First Sensor AG, the Berlin-Brandenburg OpTecBB network for optical technologies welcomes its 100. member.

Miniaturized External Cavity Diode Lasers emitting at 633 nm are best suited for application in absolute distance interferometry and atomic spectroscopy

/en/research/research-news/miniaturized-external-cavity-diode-lasers-emitting-at-633-nm-are-best-suited-for-application-in-absolute-distance-interferometry-and-atomic-spectroscopy

For interferometric measurement and atomic spectroscopy, a micro-integrated, tunable external cavity diode laser (ECDL) with a reflection Bragg grating has been developed at FBH. The single-mode, …

Line sensors for novel X-ray detectors

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Only recently, FBH has successfully demonstrated a new generation of direct-converting line detectors. Within the system, GaAs sensors directly convert X-ray photons into charge carriers with a…

OpTecBB-Vorstand mit großer Mehrheit bestätigt

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At the regular OpTecBB's meeting of members, the competence network reconfirmed its executive board with a vast majority. Again, Günther Tränkle from the Ferdinand-Braun-Institut has been reelected…

Hochtechnologie auf Weltraum-Reise

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When the communcation satellite Alphasat is launched into its geostationary orbit in mid 2012, a high tech unit from the Ferdinand-Braun-Institut is also on board. The European Space Agency ESA…

Jenoptik is expanding its laser production at the Berlin site as a result of high customer demand

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The Jenoptik Group is to invest around 10 million euros to expand the manufacture of laser bars at its site in the Berlin-Adlershof technology park- in direct proximity to its research partner…