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A Short Introduction to Semiconductor Nanophotonics
/en/research/publications/a-short-introduction-to-semiconductor-nanophotonics
Semiconductor nanophotonic devices, confining electronic excitations and light on a nanometer spatial scale, could provide valuable solutions to many challenges that society is facing. One example…
Perspektiven physikalischer Verfahren der Antiseptik und Desinfektion
/en/research/publications/perspektiven-physikalischer-verfahren-der-antiseptik-und-desinfektion
Der seit eingien Jahren an Bedeutung gewinnende Einsatz hochenergetischer UVC-Strahlung, antimikrobieller blauer Strahlung und physikalischer kalter Plasmen (KP) zur Desinfektion ist im Vergleich zur…
Calibration Substrate Design for Accurate mm-Wave Probe-Tip Calibration
/en/research/publications/calibration-substrate-design-for-accurate-mm-wave-probe-tip-calibration
This work presents the design concept, EM-simulation and measurement results of a new calibration substrate developed to address probe-tip calibration challenges and to improve calibration accuracy…
Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
/en/research/publications/structural-and-luminescence-imaging-and-characterisation-of-semiconductors-in-the-scanning-electron-microscope
The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging(ECCI) and cathodoluminescence (CL) hyperspectral imaging provide…
Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure
/en/research/publications/output-matching-network-design-for-highly-efficient-inp-dhbt-w-band-pas-utilizing-a-defected-ground-structure
Output matching networks (OMNs) are substantially determining the performance of millimetre wave power amplifiers (PAs). In terms of efficiency, there are two major requirements for OMNs: First is to…
An Improved EM-Simulation Procedure to Extract Extrinsic Elements of Terahertz InP DHBTs
/en/research/publications/an-improved-em-simulation-procedure-to-extract-extrinsic-elements-of-terahertz-inp-dhbts
For accurate small-signal modeling of double heterojunction bipolar transistors (DHBT), electromagnetic (EM) simulations of the outer shell of the DHBT are used for de-embedding the external…
A Compact Broadband Marchand Balun for Millimeter-wave and Sub-THz Applications
/en/research/publications/a-compact-broadband-marchand-balun-for-millimeter-wave-and-sub-thz-applications
This paper presents a compact broadband millimeter-wave Marchand balun, realized using indium phosphide (InP) transferred substrate (TS) technology. The architecture of this balun is based on a…
Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies
/en/research/publications/modeling-the-noise-of-transferred-substrate-inp-dhbts-at-highest-frequencies
This paper investigates noise modeling of transferred-substrate indium phosphide double heterobipolar transistors (InP DHBTs). It is shown that the shot noise of these devices exhibits a pronounced…
Mode-locked diode lasers as sources for Two-Photon Polymerization
/en/research/publications/mode-locked-diode-lasers-as-sources-for-two-photon-polymerization
Mode-locked diode lasers as sources for Two-Photon Polymerization N. Surkampa, G. Zylab, E.L. Gurevichb,d, C. Esenb, A. Klehrc, A. Kniggec, A. Ostendorfb,…
Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire
/en/research/publications/improved-performance-of-uvc-leds-by-combination-of-high-temperature-annealing-and-epitaxially-laterally-overgrown-alnsapphire
We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) emitting at 265 nm grown on stripe-patterned high-temperature annealed (HTA) epitaxially laterally…