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AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy
/en/research/publications/aln-overgrowth-of-nano-pillar-patterned-sapphire-with-different-offcut-angle-by-metalorganic-vapor-phase-epitaxy
We present overgrowth of nano-patterned sapphire with different offcut angles by metalorganic vapor phase epitaxy. Hexagonal arrays of nano-pillars were prepared via Displacement Talbot Lithography…
Mode-locked diode laser-based two-photon polymerisation
/en/research/publications/mode-locked-diode-laser-based-two-photon-polymerisation
In this Letter, the authors present the construction of three-dimensional microstructures by two-photon polymerisation induced by ultrashort pulses of a mode-locked diode laser. The ultrafast light…
Versatile high power pulse-laser source for pico- and nanosecond optical pulses
/en/research/publications/versatile-high-power-pulse-laser-source-for-pico-and-nanosecond-optical-pulses
This paper presents a pulse-laser source for the generation of ps and ns laser pulses with more than 50 W peak output power. The final stages of the drivers use GaN transistors and are capable…
Preface - JSS Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki
/en/research/publications/preface-jss-focus-issue-on-recent-advances-in-wide-bandgap-iii-nitride-devices-and-solid-state-lighting-a-tribute-to-isamu-akasaki
Preface - JSS Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki F. Ren1, K.C. Mishra2, H. Amano3,…
Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure
/en/research/publications/improvement-in-the-reliability-of-algainp-based-light-emitting-diode-package-using-optimal-silicone-and-leadframe-structure-1
We investigated how the reliability of red light-emitting diode (LED) packages was affected by the types of silicones and package structures. The tensile strengths of different types of silicones…
Nanopatterned sapphire substrates in deep-UVLEDs: is there an optical benefit?
/en/research/publications/nanopatterned-sapphire-substrates-in-deep-uvleds-is-there-an-optical-benefit
Light emitting diodes (LEDs) in the deep ultra-violet (DUV) offer new perspectives for multiple applications ranging from 3D printing to sterilization. However, insufficient light extraction severely…
Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks
/en/research/publications/bandwidth-improvement-of-mmic-single-pole-double-throw-passive-hemt-switches-with-radial-stubs-in-impedance-transformation-networks
In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at…
Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings
/en/research/publications/continuous-wave-operation-of-dfb-laser-diodes-based-on-gan-using-10th-order-laterally-coupled-surface-gratings
Single longitudinal mode continuous-wave operation of distributed-feedback (DFB) laser diodes based on GaN is demonstrated using laterally coupled 10th-order surface Bragg gratings. The gratings…
AlGaN/GaN HEMT based sensor and system for polar liquid detection
/en/research/publications/algangan-hemt-based-sensor-and-system-for-polar-liquid-detection
In this paper, a GaN-high electron mobility transistor (HEMT) based sensor is designed, fabricated and characterized for polar liquid sensing. The fabricated HEMT sensor chip is packaged by using low…
Growth and Properties of Intentionally Carbon-Doped GaN Layers
/en/research/publications/growth-and-properties-of-intentionally-carbon-doped-gan-layers
Carbon-doping of GaN layers with thickness in the mm-range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi-insulating behavior with a…