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Hybrid laser modules for the green spectral region with high output powers and high conversion efficiency
/en/research/research-news/hybrid-laser-modules-for-the-green-spectral-region-with-high-output-powers-and-high-conversion-efficiency
FBH systematically examines frequency doubling of diode lasers in bulk crystals, planar and channel waveguides. Comparison reveals that frequency doubling of diode lasers in planar waveguides…
Laser-assisted fabrication of vertical interconnects for AlGaN/GaN power transistors
/en/research/research-news/laser-assisted-fabrication-of-vertical-interconnects-for-algangan-power-transistors
Vertical integration plays a key role with regard to the increasing integration density of electronic devices. Vertical interconnect accesses (VIAs) from the device’s front through the substrate…
High-voltage lateral GaN Schottky diodes for high-speed power switching applications
/en/research/research-news/high-voltage-lateral-gan-schottky-diodes-for-high-speed-power-switching-applications
Highly efficient electrical power converters are indispensible for ecology-minded future electronic systems. Thus, Schottky diodes with lateral device topology have been developed at FBH which fully…
New THz on-wafer measurement facility enables FBH to measure frequencies up to 500 GHz
/en/research/research-news/new-thz-on-wafer-measurement-facility-enables-fbh-to-measure-frequencies-up-to-500-ghz
FBH acquired a new semi-automatic on-wafer characterization system enabling 500 GHz measurements. This system is ideally suited for on-wafer characterization in the frequency range beyond 100…
AlN layers with low dislocation density for UV LEDs
/en/research/research-news/aln-layers-with-low-dislocation-density-for-uv-leds
FBH managed to reduce the dislocation density of AlN by more than one order of magnitude by the epitaxial lateral overgrowth of patterned AlN layers. Thus, the dislocation density of AlN layers can…
GaN HFETs with high current and high breakdown voltage using Si-doped AlGaN back barrier
/en/research/research-news/gan-hfets-with-high-current-and-high-breakdown-voltage-using-si-doped-algan-back-barrier
With a thin n-doped AlGaN layer under the channel FBH scientists significantly improved the trade-off between on-state resistance and breakdown voltage of GaN HFETs for power switching applications.
OpTecBB welcomes 100. member
/en/media-center/press-releases/optecbb-welcomes-100-member
With First Sensor AG, the Berlin-Brandenburg OpTecBB network for optical technologies welcomes its 100. member.
Miniaturized External Cavity Diode Lasers emitting at 633 nm are best suited for application in absolute distance interferometry and atomic spectroscopy
/en/research/research-news/miniaturized-external-cavity-diode-lasers-emitting-at-633-nm-are-best-suited-for-application-in-absolute-distance-interferometry-and-atomic-spectroscopy
For interferometric measurement and atomic spectroscopy, a micro-integrated, tunable external cavity diode laser (ECDL) with a reflection Bragg grating has been developed at FBH. The single-mode, …
Line sensors for novel X-ray detectors
/en/research/research-news/line-sensors-for-novel-x-ray-detectors
Only recently, FBH has successfully demonstrated a new generation of direct-converting line detectors. Within the system, GaAs sensors directly convert X-ray photons into charge carriers with a…
OpTecBB-Vorstand mit großer Mehrheit bestätigt
/en/media-center/press-releases/optecbb-vorstand-mit-grosser-mehrheit-bestaetigt
At the regular OpTecBB's meeting of members, the competence network reconfirmed its executive board with a vast majority. Again, Günther Tränkle from the Ferdinand-Braun-Institut has been reelected…