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A single-laser alternating-frequency magneto-optical trap
/en/research/publications/a-single-laser-alternating-frequency-magneto-optical-trap
In this paper, we present a technique for magneto-optical cooling and trapping of neutral atoms using a single laser. The alternating-frequency magneto-optical trap (AF-MOT) uses an agile light…
Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes
/en/research/publications/effect-of-quantum-barrier-composition-on-electro-optical-properties-of-algan-based-uvc-light-emitting-diodes
The height of the barrier around the AlGaN quantum well has a strong impact on the external quantum efficiency of UVC light emitting diodes (LEDs) as it affects the carrier confinement, the…
Displacement Talbot lithography for nano-engineering of III-nitride materials
/en/research/publications/displacement-talbot-lithography-for-nano-engineering-of-iii-nitride-materials
Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography…
Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application
/en/research/publications/hole-injection-mechanism-in-the-quantum-wells-of-blue-light-emitting-diode-with-v-pits-for-micro-display-application
The current injection mechanisms for blue light emitting diodes (LEDs) with and without V pits were examined by controlling the bandgaps of InGaN quantum wells (QWs), which were changed by reducing…
Nitride Semiconductors
/en/research/publications/nitride-semiconductors
The III-nitrides have successfully made their way into a number of economically important fields, both in electronics and optoelectronics. This chapter first discusses the important properties of the…
High-power laser diodes for direct applications and laser pumping
/en/research/publications/high-power-laser-diodes-for-direct-applications-and-laser-pumping
This chapter focuses primarily on progress in HPDLS that are grown on GaAs substrates and emit in the operating wavelength range λop = 900... 1000 nm, where the highest…
Progress in Efficiency and Brightness in GaAs-Based High Power Diode Lasers
/en/research/publications/progress-in-efficiency-and-brightness-in-gaas-based-high-power-diode-lasers
Continuous improvement is required in the properties of GaAs-based high power diode lasers, to support the needs of the rapidly growing material processing market, amongst others. A brief overview is…
Monolithic Master Oscillator Tilted Tapered Power Amplifier Emitting 9.5 W at 1060 nm
/en/research/publications/monolithic-master-oscillator-tilted-tapered-power-amplifier-emitting-95nbspw-at-1060nbspnm
In this work, we present the design and performance of a monolithic master oscillator tilted tapered power amplifier emitting at 1060 nm. The device consists of three sections: a 2 mm long…
Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 808 nm
/en/research/publications/micro-integrated-high-power-narrow-linewidth-external-cavity-tapered-diode-laser-at-808nbspnm
A novel compact micro-integrated high-power narrow-linewidth external-cavity diode laser around 808 nm is demonstrated. The laser system contains a tapered amplifier consisting of a…
Extended cavity diode laser master-oscillator-power-amplifier for operation of an iodine frequency reference on a sounding rocket
/en/research/publications/extended-cavity-diode-laser-master-oscillator-power-amplifier-for-operation-of-an-iodine-frequency-reference-on-a-sounding-rocket
We present a hybrid microintegrated diode laser module developed for iodine spectroscopy on board a sounding rocket. The laser module is based on a master-oscillator-power-amplifier concept: an…