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Two-photon polymerization with diode lasers emitting ultrashort pulses with high repetition rate
/en/research/publications/two-photon-polymerization-with-diode-lasers-emitting-ultrashort-pulses-with-high-repetition-rate
In this Letter, we investigate the resolution of two-photon polymerization (2PP) with an amplified mode-locked external cavity diode laser with adjustable pulse length and a high repetition rate. The…
Travelling-Wave Analysis of Extended Cavity Diode Lasers
/en/research/publications/travelling-wave-analysis-of-extended-cavity-diode-lasers
We report results of numerical simulations of the dynamic properties of single-transverse mode diode lasers subject to an external optical feedback provided by a volume holographic Bragg grating. We…
Impact of High-Temperature Annealing on Boron Containing AlN Layers Grown by Metal Organic Vapor Phase Epitaxy
/en/research/publications/impact-of-high-temperature-annealing-on-boron-containing-aln-layers-grown-by-metal-organic-vapor-phase-epitaxy
Herein, the impact of high-temperature (HT) annealing on the crystalline structure of metal organic vapor phase epitaxy (MOVPE)-grown boron-containing AlN layers is investigated. High-resolution…
GaN digital microwave outphasing PA
/en/research/publications/gan-digital-microwave-outphasing-pa
This paper presents a novel GaN-based digital outphasing power amplifier (PA) for the 800 MHz range. The PA reaches a maximum output power of 5.8 W at 30 V final-stage (FS) drain…
Design of a 300 GHz externally Injection-Lockable Push-Push Oscillator for Beam Steering Applications
/en/research/publications/design-of-a-300-ghz-externally-injection-lockable-push-push-oscillator-for-beam-steering-applications
A design for a 300 GHz reflection type push-push oscillator including an input for an external injection locking signal is proposed. The oscillator is based on substrate transferred InP double…
The influence of the GaN substrate types and active area scaling design on the conduction properties of vertical GaN MISFETs for laser driving applications
/en/research/publications/the-influence-of-the-gan-substrate-types-and-active-area-scaling-design-on-the-conduction-properties-of-vertical-gan-misfets-for-laser-driving-applications
In this work we present a systematic study on the conduction properties in vertical GaN trench MISFETs grown and manufactured on different free standing GaN substrates. It is shown that devices…
Application of 280nm In-Situ Metrology to study the Influence of AlN Templates on Surface Roughness and Strain Effects in UVA/UVB LEDs
/en/research/publications/application-of-280nm-in-situ-metrology-to-study-the-influence-of-aln-templates-on-surface-roughness-and-strain-effects-in-uvauvb-leds
Traditional in-situ reflectometry sensing at blue (405 nm), red (630 nm) and NIR (950 nm) wavelengths cannot resolve variations in InAlGaN surface roughness or layer thickness with the…
The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB-LED Structures
/en/research/publications/the-impact-of-aln-templates-on-strain-relaxation-mechanisms-during-the-movpe-growth-of-uvb-led-structures
Strain relaxation mechanisms in AlGaN based light emitting diodes emitting in the ultraviolet B spectral range (UVB-LEDs) grown on different AlN/sapphire templates are analyzed by combining in situ…
Hyperspectral terahertz imaging with electro-optic dual combs and a FET-based detector
/en/research/publications/hyperspectral-terahertz-imaging-with-electro-optic-dual-combs-and-a-fet-based-detector
In this paper, a terahertz hyperspectral imaging architecture based on an electro-optic terahertz dual-comb source is presented and demonstrated. In contrast to single frequency sources, this…
Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
/en/research/publications/milliwatt-power-233nbspnm-algan-based-deep-uv-leds-on-sapphire-substrates
Deep UV-LEDs (DUV-LEDs) emitting at 233 nm with an emission power of (1.9±0.3) mW and an external quantum efficiency of (0.36±0.07) % at 100 mA are presented. The…