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Curvature sensor: indispensable and award-winning

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The manufacture of GaN devices is troubled by a considerable bow of the semiconductor wafers to the point of cracking of layer structures. The aim is therefore to obtain a flat wafer with a…

Fresh from the press: frequent 02_2010 on high-power diode lasers

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The current frequent offers a survey of various powerful light sources being developed by Ferdinand-Braun-Institut - from the chip to pilot series.

Pictures like in real life

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Due to laser light sources captivatingly true pictures can be generated. Such sources already demonstrate their capability in flight simulators and in large-scale projections. However, they are…

Great Success for Optical Technologies in Berlin

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Two of the four Berlin-Brandenburg innovation prizes 2010 have been awarded to members of the regional network for optical technologies OpTecBB. 

Pulsed diode laser systems with high output powers and stabilized emission wavelength

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The FBH develops pulsed diode-laser based systems for pulse durations in the time range from 100 ns down to 500 ps, in the range around 100 ps and below 10 ps. Due to their high…

AlN templates with reduced defect densities for optoelectronic devices operating in the ultra-violet spectral range

/en/research/research-news/aln-templates-with-reduced-defect-densities-for-optoelectronic-devices-operating-in-the-ultra-violet-spectral-range

Thick AlN template layers with low dislocation density and smooth surfaces are required for fabrication of high-efficiency light emitting diodes (LEDs) operating in the ultra-violet spectral range.…

Investigation of the LED heterostructure and the optical polarization of UV LEDs

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Investigation of the LED heterostructure and the optical polarization of UV LEDs Tim KolbeTechnische Universitaet Berlin, Berlin 06.01.2012

Epitaktisches laterales Überwachsen strukturierter AlN/Saphir Templates für UV-Emittter

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Der Vortrag fällt leider aus.

Hydrid-Gasphasenepitaxie (HVPE) von AlGaN

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Hydrid-Gasphasenepitaxie (HVPE) von AlGaN Sylvia HagedornFerdinand-Braun-Institut, Berlin 20.01.2012 (in German)

Neu an der TU Berlin: (HR)TEM und Elektronenholographie an Halbleiter-Nanostrukturen photonischer Bauelemente

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Neu an der TU Berlin: (HR)TEM und Elektronenholographie an Halbleiter-Nanostrukturen photonischer Bauelemente Prof. Michael LehmannTechnische Universitaet Berlin, Berlin 27.01.2012 (in German)