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Narrow bandwidth red emitting diode lasers

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Narrow bandwidth red-emitting diode lasers will be an alternative for commonly used He-Ne-Lasers in metrology and Raman spectroscopy in the future. Just recently, scientists from the FBH succeeded…

3-dimensional integration of SiGe-BiCMOS and InP-HBT technology

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Current results from the InP-HBT high frequency circuits fabricated within the "HiTeK" project prove the capability of the developed technology platform for heterogeneous integrated…

Fast and efficient switching with GaN-based power-transistors

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The FBH develops normally-off GaN transistors based on a p-GaN gate technology. Switching transistors with 150 mm gate width have been realized showing an on-state resistance RON =…

New spin-off at FBH: Thin film coating at atmospheric pressure

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Many of our every day products, such as mobile phones, eye glasses, and flat-panel displays contain thin films deposited by cathode evaporation. Up to now, this requires bulky and costly vacuum…

Cream of the Crop: Sandwich Chips Combining the Best of Two Technologies

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The two Leibniz institutes FBH and IHP broke new technological ground and successfully combined their – up to now separate – technology worlds. Due to their high performance the novel chips developed…

High Brilliance Diode Lasers for Industrial Applications: BRIDLE

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A consortium of companies and research institutes from five European countries has joined forces in a common EC funded research project to achieve dramatic improvements in the brilliance of…

New deposition tool for excellent silicon nitride layers

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With Sentech Instruments' SI500D the FBH has a new capable tool for plasma deposition of silicon nitride at hand that significantly expands the institute’s possibilities in this field.

AlGaN/GaN microwave power transistors: Focussed optimization of linearity and efficiency

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The linearity of AlGaN/GaN heterojunction field-effect transistors (HFETs) is one of the key parameters in modern telecom systems. The FBH works on optimizing this feature to design GaN-based RF…

Cost-Effective Packaging for 77 GHz Automotive Radar

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Radar systems in the 77 GHz range have become an essential part of the comfort and safety features in high-end cars. One of the dominant cost factors for such systems is packaging. LTCC…

High quality GaN boules

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Efficient blue-violet laser diodes with high reliability and long device lifetimes require GaN substrates with high material quality at affordable prices. As an alternative approach to growth on…