Search
Rules for the search
- Only words with 2 or more characters are accepted
- Max 200 chars total
- Space is used to split words, "" can be used to search for a whole string (not indexed search then)
- AND, OR and NOT are prefix words, overruling the default operator
- +/|/- equals AND, OR and NOT as operators.
- All search words are converted to lowercase
The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films
/en/research/publications/the-scanning-electron-microscope-as-a-flexible-tool-for-investigating-the-properties-of-uv-emitting-nitride-semiconductor-thin-films
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and…
Efficient active multiplier-based signal source for >300 GHz system applications
/en/research/publications/efficient-active-multiplier-based-signal-source-for-gt300-ghz-system-applications
This Letter presents a 300 GHz signal source, realised using an 800 nm transferred-substrate InP double heterojunction bipolar transistor process. The source is based on an active frequency…
A 300 GHz Active Frequency Tripler in Transferred-Substrate InP DHBT Technology
/en/research/publications/a-300-ghz-active-frequency-tripler-in-transferred-substrate-inp-dhbt-technology
This paper presents a monolithic integrated active frequency tripler implemented in an InP double heterojunction bipolar transistor (DHBT) transferred-substrate (TS) technology. The active tripler is…
A GaN-HEMT with Floating LF Ground for Reverse Operation in Integrated RF Power Circuits
/en/research/publications/a-gan-hemt-with-floating-lf-ground-for-reverse-operation-in-integrated-rf-power-circuits
An integrated GaN-HEMT with floating low-frequency (LF) ground is presented. The floating LF ground enables reverse operation in RF applications making operation at offset DC and LF voltages…
A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT
/en/research/publications/a-05-thz-signal-source-with-11-dbm-peak-output-power-based-on-inp-dhbt
This paper presents a 0.5 THz oscillator, realized using a transferred-substrate (TS) 0.3 µm InP DHBT process. It delivers -11 dBm peak output power. The DC consumption is only…
Limiting the Output Power of Rugged GaN LNAs
/en/research/publications/limiting-the-output-power-of-rugged-gan-lnas
Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient…
Packaged Floating-Ground RF Power GaN-HEMT
/en/research/publications/packaged-floating-ground-rf-power-gan-hemt
This paper presents a novel packaged RF power GaN-HEMT for floating-ground operation. A bondable singlelayer capacitor is mounted in the package close to the transistor chip to provide the low…
GaN Digital Outphasing PA
/en/research/publications/gan-digital-outphasing-pa
This paper presents a novel GaN-based digital outphasing power amplifier for 800 MHz. The PA reaches a maximum output power of 5.8 W at 30 V final-stage drain supply voltage. A novel…
Integrated atomic quantum technologies in demanding environments: development and qualification of miniaturized optical setups and integration technologies for UHV and space operation
/en/research/publications/integrated-atomic-quantum-technologies-in-demanding-environments-development-and-qualification-of-miniaturized-optical-setups-and-integration-technologies-for-uhv-and-space-operation
Employing quantum sensors in field or in space implies demanding requirements on the used components and integration technologies. Within our work on compact atomic sensors, we develop miniaturized,…
Impact of Substrate Termination on Dynamic On-State Characteristics of a Normally-off Monolithically Integrated Bidirectional GaN HEMT
/en/research/publications/impact-of-substrate-termination-on-dynamic-on-state-characteristics-of-a-normally-off-monolithically-integrated-bidirectional-gan-hemt
The dynamic on-state resistance of monolithically integrated bidirectional GaN HEMTs assuming hardswitching in half-bridge topology is studied for different approaches of substrate termination.…