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Direct SERDS sensing of molecular biomarkers in plants under field conditions
/en/research/publications/direct-serds-sensing-of-molecular-biomarkers-in-plants-under-field-conditions
Molecular biomarkers such as microRNAs (miRNAs) play important roles in regulating various developmental processes in plants. Understanding these pathways will help bioengineer designing organisms…
Structural and electrical properties of Pd/p-GaN contacts for GaN-based laser diodes
/en/research/publications/structural-and-electrical-properties-of-pdp-gan-contacts-for-gan-based-laser-diodes
In this paper, the properties of Pd-based p-contacts on GaN-based laser diodes are discussed. Pd is often the metal of choice for ohmic contacts on p-GaN. However, for Pd/p-GaN ohmic contacts,…
Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode
/en/research/publications/effect-of-unevenly-distributed-v-pits-on-the-optical-and-electrical-characteristics-of-green-micro-light-emitting-diode
In this study, we investigated the effect of different-size V pits on the opto-electrical performance of different-size InGaN-based green (520 nm) light-emitting diodes (LEDs). The size of V…
Recent Progress in Photonic Processing of Metal-Oxide Transistors
/en/research/publications/recent-progress-in-photonic-processing-of-metal-oxide-transistors
Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been…
Frequency dependence of the capacitive excitation of plasma: An experimental proof
/en/research/publications/frequency-dependence-of-the-capacitive-excitation-of-plasma-an-experimental-proof
Today, most of the microwave plasma sources are driven at 2.45 GHz. Meanwhile, GaN technology offers high-power components working efficiently at higher frequencies. Therefore, the perspective…
Continuous Wave THz System Based on an Electrically Tunable Monolithic Dual Wavelength Y-Branch DBR Diode Laser
/en/research/publications/continuous-wave-thz-system-based-on-an-electrically-tunable-monolithic-dual-wavelength-y-branch-dbr-diode-laser
We analyse the use of a tunable dual wavelength Y-branch DBR laser diode for THz applications. The laser generates electrically tunable THz difference frequencies in the range between 100 and…
Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects
/en/research/publications/carbon-doping-of-gan-proof-of-the-formation-of-electrically-active-tri-carbon-defects
Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds 5 × 1017 cm-3, the carbon atoms increasingly form triatomic clusters. The…
Low-index quantum-barrier single-pass tapered semiconductor optical amplifiers for efficient coherent beam combining
/en/research/publications/low-index-quantum-barrier-single-pass-tapered-semiconductor-optical-amplifiers-for-efficient-coherent-beam-combining
The requirements for coherent combination of high power GaAs-based single-pass tapered amplifiers are studied. Changes to the epitaxial layer structure are shown to bring higher beam quality and…
Wavelength stabilized high pulse power 48 emitter laser bars for automotive light detection and ranging application
/en/research/publications/wavelength-stabilized-high-pulse-power-48-emitter-laser-bars-for-automotive-light-detection-and-ranging-application
Diode lasers generating optical pulses with high peak power and lengths in the nanosecond range are key components for light detection and ranging systems, e.g. for autonomous driving and object…
Temperature-Dependent Charge Carrier Diffusion in [0001] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
/en/research/publications/temperature-dependent-charge-carrier-diffusion-in-lbrack0001rbrack-direction-of-gan-determined-by-luminescence-evaluation-of-buried-ingan-quantum-wells
Temperature-dependent transport of photoexcited charge carriers through a nominally undoped, c-plane GaN layer toward buried InGaN quantum wells is investigated by continuous-wave and time-resolved…