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High power broad-area lasers with buried implantation for current confinement
/en/research/publications/high-power-broad-area-lasers-with-buried-implantation-for-current-confinement
Broad area lasers emitting near 915 nm are fabricated using a 2-step epitaxial growth process, with an intermediate implantation of silicon or oxygen ions. This approach allows for the…
ZERODUR® based optical systems for quantum gas experiments in space
/en/research/publications/zerodurreg-based-optical-systems-for-quantum-gas-experiments-in-space
Numerous quantum technologies make use of a microgravity environment e.g. in space. Operating in this extreme environment makes high demands on the experiment and especially the laser system…
Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology
/en/research/publications/design-and-modeling-of-an-ultra-wideband-low-noise-distributed-amplifier-in-inp-dhbt-technology
This paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform…
Highly compact GaN-based all-digital transmitter chain including SPDT T/Rx switch for massive MIMO applications
/en/research/publications/highly-compact-gan-based-all-digital-transmitter-chain-including-spdt-trx-switch-for-massive-mimo-applications
This paper presents a fully digital transmitter chain from baseband to antenna, including a modulator, two truly digital (i.e. fully switched) microwave power amplifiers and a transmit/receive…
Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes
/en/research/publications/influence-of-substrate-off-cut-angle-on-the-performance-of-310-nm-light-emitting-diodes
The influence of the sapphire substrate off-cut angle from c-plane orientation on the surface morphology of AlN/AlGaN layers and the performance of 310 nm light emitting diode structures has…
Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots
/en/research/publications/broadband-semiconductor-light-sources-operating-at-1060-nm-based-on-inassbgaas-submonolayer-quantum-dots
In this paper, we investigate the potential of submonolayer-grown InAs:Sb/GaAs quantum dots as active medium for opto-electronic devices emitting in the 1060 nm spectral range. Grown as multiple…
Time-Dependent Simulation of Thermal Lensing in High-Power Broad-Area Semiconductor Lasers
/en/research/publications/time-dependent-simulation-of-thermal-lensing-in-high-power-broad-area-semiconductor-lasers
We propose a physically realistic and yet numerically applicable thermal model to account for short- and long-term self-heating within broad-area lasers. Although the temperature increase is small…
Impact of Carrier Nonpinning Effect on Thermal Power Saturation in GaAs-Based High Power Diode Lasers
/en/research/publications/impact-of-carrier-nonpinning-effect-on-thermal-power-saturation-in-gaas-based-high-power-diode-lasers
A root-cause analysis of thermal power saturation in broad area diode lasers is presented. Thermal power saturation limits in largest parts the optical power in continuous wave (CW) driven diode…
Coherent beam combining of high power quasi continuous wave tapered amplifiers
/en/research/publications/coherent-beam-combining-of-high-power-quasi-continuous-wave-tapered-amplifiers
We demonstrate coherent beam combining of four high brightness tapered amplifiers in pulsed, quasi continuous wave (QCW) operation, seeded by a 976 nm laser diode. The maximum power of…
Development and qualification of miniaturized, UHV-compatible optical systems for integrated atomic quantum technologies
/en/research/publications/development-and-qualification-of-miniaturized-uhv-compatible-optical-systems-for-integrated-atomic-quantum-technologies
While generation, manipulation, and detection of atomic quantum states in ultra-cold matter is well established within laboratory environments, the transfer of these techniques into field-compatible,…