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Improvement of Load-Pull Characterization of Microwave Power Transistors: Measurements with Modulated Signals
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Microwave power amplifiers in modern telecommunication systems have to work over large bandwidth with high peak-to-average-power-ratio signals. Dedicated source- and load-pull measurement setups…
Chip mounting technology for UV LEDs developed
/en/research/research-news/chip-mounting-technology-for-uv-leds-developed
So far, the works on UV LEDs focussed on the optimization of the epitaxial structures. By means of UV LEDs (wavelength approx. 320 nm) a technology has now been developed which allows to…
Powerful all-rounders: FBH’s laser modules in matchbox size
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At Laser World of Photonics, the Ferdinand-Braun-Institut highlights its miniaturized laser beam sources which are suitable for a variety of applications, from material processing to display…
UV photodetectors based on AlGaN/GaN heterostructures for optical switching
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Due to their blindness in the visible region (solar blind) and the radiation resistance, GaN-based UV photodetectors are highly demanded for many application. FBH developed such detectors…
Hybrid laser modules for the green spectral region with high output powers and high conversion efficiency
/en/research/research-news/hybrid-laser-modules-for-the-green-spectral-region-with-high-output-powers-and-high-conversion-efficiency
FBH systematically examines frequency doubling of diode lasers in bulk crystals, planar and channel waveguides. Comparison reveals that frequency doubling of diode lasers in planar waveguides…
Laser-assisted fabrication of vertical interconnects for AlGaN/GaN power transistors
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Vertical integration plays a key role with regard to the increasing integration density of electronic devices. Vertical interconnect accesses (VIAs) from the device’s front through the substrate…
High-voltage lateral GaN Schottky diodes for high-speed power switching applications
/en/research/research-news/high-voltage-lateral-gan-schottky-diodes-for-high-speed-power-switching-applications
Highly efficient electrical power converters are indispensible for ecology-minded future electronic systems. Thus, Schottky diodes with lateral device topology have been developed at FBH which fully…
New THz on-wafer measurement facility enables FBH to measure frequencies up to 500 GHz
/en/research/research-news/new-thz-on-wafer-measurement-facility-enables-fbh-to-measure-frequencies-up-to-500-ghz
FBH acquired a new semi-automatic on-wafer characterization system enabling 500 GHz measurements. This system is ideally suited for on-wafer characterization in the frequency range beyond 100…
AlN layers with low dislocation density for UV LEDs
/en/research/research-news/aln-layers-with-low-dislocation-density-for-uv-leds
FBH managed to reduce the dislocation density of AlN by more than one order of magnitude by the epitaxial lateral overgrowth of patterned AlN layers. Thus, the dislocation density of AlN layers can…
GaN HFETs with high current and high breakdown voltage using Si-doped AlGaN back barrier
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With a thin n-doped AlGaN layer under the channel FBH scientists significantly improved the trade-off between on-state resistance and breakdown voltage of GaN HFETs for power switching applications.