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InP high-speed transistors and integrated circuits in transferred substrate technology

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Their excellent material properties qualify InP-based transistors as key components for systems requiring high operating frequencies. At FBH, a transferred substrate technology has been…

Efficient Microwave Power Transistors for L- and S-Band Applications

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In cooperation with its spin-off company BeMiTec FBH develops highly efficient power transistors for output power levels of more than 100 W in the frequency range between 1 and 3 GHz.

Senator von Obernitz visits the FBH

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FBH's director Günther Tränkle outlines the institute's research topics to the Berlin Senator for Economics, Technology and Research Sybille von Obernitz and gave her a tour through the institute.

Gallium-nitride-based high-frequency ICs with improved efficiency

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Various radar and satellite systems operate in the frequency range from 8 to 12 GHz. In this X-band range, amplifiers are commonly built as monolithic circuits, as critical tolerances and…

GeMiC 2012: Best Paper Award goes to FBH team

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The best paper award of this year’s German Microwave Conference GeMiC 2012 was bestowed to two publications, one of them from the Ferdinand-Braun-Institut.

Girls'Day at FBH

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Also this year, FBH opened its doors for the Girls'Day. The girls learned from the institute's trainees and junior researchers about their world of employment and gained information about FBH's tiny,…

DFB diode lasers for precision spectroscopy of potassium (767 nm)

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FBH has developed narrow linewidth, high-power DFB diode lasers for quantum optics experiments on ensembles of ultra-cold potassium atoms. An improved design of the grating layers has been…

CS-MANTECH’s "He Bong Kim Best Paper Award" bestowed to FBH team

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On April 24th, 2012 the prize for the best publication and presentation 2011 has been awarded to a team from the Berlin Ferdinand-Braun-Institut at CS-MANTECH conference in Boston, USA.

Increased emission power of 380 nm UV-LEDs

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At FBH, the efficiency of top-emitting UV-LEDs for sensor applications with emission wavelengths between 360 and 380 nm could be significantly increased by optimizing the epitaxial structure.…

Forschung, die unter die Haut geht

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The Einstein Foundation Berlin funds the interdisciplinary research project "HautScan" - also involved is the Ferdinand-Braun-Institut.