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AlGaN/GaN HFET Technology at FBH: Fabrication of Power Bars and MMICs
/en/research/research-news/algangan-hfet-technology-at-fbh-fabrication-of-power-bars-and-mmics-1
Sergey A. ShevchenkoFerdinand-Braun-Institut, Berlin
K and Q-Band GaN HEMTs for space applications
/en/research/research-news/k-and-q-band-gan-hemts-for-space-applications
Konstantin OsipovFerdinand-Braun-Institut, Berlin
FBH at GeMiC 2014
/en/events/fbh-at-gemic-2014
FBH scientists present new research results at the German Microwave Conference.
FBH publication selected as highlight by IOP Science
/en/events/fbh-publication-selected-as-highlight-by-iop-science
The article of Horia Porteanu et.al. published in Plasma Sources Science and Technology last year has been selected by the journal’s Editors as a highlight of 2013.
UV-B LEDs of high robustness and reliability
/en/research/research-news/uv-b-leds-of-high-robustness-and-reliability
In order to enhance the lifetime of currently available UV-B LEDs, extended stress tests of UV-B LEDs have been started at FBH to study the relevant degradation mechanisms in these devices - with…
Kompakte elektro-optische Module für portable quantenoptische Sensoren
/en/research/research-news/kompakte-elektro-optische-module-fuer-portable-quantenoptische-sensoren
Christian KürbisFerdinand-Braun-Institut, Berlin
Optical polarization in AlGaN - from materials characterization to prediction of emission characteristics of optoelectronic devices
/en/research/research-news/optical-polarization-in-algan-from-materials-characterization-to-prediction-of-emission-characteristics-of-optoelectronic-devices
The FBH currently develops AlGaN-based UV light emitting diodes (LED) and laser diodes for the wavelength range 200 – 350 nm in close cooperation with TU Berlin. Lately, we demonstrated LED…
Presentation of results: microresonators of utmost quality for high-precision applications
/en/events/presentation-of-results-microresonators-of-utmost-quality-for-high-precision-applications
FBH and HU Berlin present results of the joint AdMire project (in German language).
Abscheidung von Ga2O3-Schichten mittels MOVPE
/en/events/abscheidung-von-ga2o3-schichten-mittels-movpe
Dr. Günter WagnerLeibniz-Institut für Kristallzüchtung, Berlin