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EuMIC Prize 2013
/en/research/research-news/eumic-prize-2013
The publication "A 164 GHz Hetero-Integrated Source in InP-on-BiCMOS Technology" has been awarded with the EuMIC Prize, the Best Paper Award of this year's European Microwave…
Investigation of the effects of surface texturing and embedded electrode on the performance of light-emitting diodes
/en/media-center/press-releases/investigation-of-the-effects-of-surface-texturing-and-embedded-electrode-on-the-performance-of-light-emitting-diodes
Ji-Hye KangChonbuk National University/TU Berlin
Heterogene Integration von Millimeterwellen-Schaltungen in InP-SiGe BiCMOS Technologie
/en/media-center/press-releases/heterogene-integration-von-millimeterwellen-schaltungen-in-inp-sige-bicmos-technologie-1
Dr. Ina OstermayFerdinand-Braun-Institut, Berlin
Force microscopy experiments towards a control of friction
/en/media-center/press-releases/force-microscopy-experiments-towards-a-control-of-friction
Dr. Roland BennewitzINM - Leibniz-Institut für Neue Materialien gGmbH, Saarbrücken
Aufbau und Funktion des BL2000 Barrenbonders
/en/media-center/press-releases/aufbau-und-funktion-des-bl2000-barrenbonders
Juliane RieprichFerdinand-Braun-Institut, Berlin
DOPS Award for PhD achievements
/en/research/research-news/dops-award-for-phd-achievements
On January 22, Lars Lindvold from the Danish Optical Society (DOPS) awarded the DOPS Prize 2013 to André Müller for his achievements in his thesis.
780 nm phase modulators based on GaAs – an alternative to crystal-based modulators
/en/research/research-news/780-nm-phase-modulators-based-on-gaas-an-alternative-to-crystal-based-modulators
Chip-based phase modulators allow to integrate phase control and modulation into hybrid laser and spectroscopy modules, leading to very compact and robust systems. III-V compound semiconductors are…
Development of slanted gates for AlGaN/GaN HEMTs
/en/research/research-news/development-of-slanted-gates-for-algangan-hemts
Two new process sequences for the formation of slanted gates have been developed at the FBH – the advanced gate modules are ready for integration into GaN-based HEMT and MMIC technology. They allow…
Short-channel effect-free 100 nm Ka-band transistors
/en/research/research-news/short-channel-effect-free-100-nm-ka-band-transistors
The FBH has developed the key gate technology for GaN power amplifier MMICs and tested epitaxial layer structures adjusted to the short gates. An implementation of these modules in the existing GaN…
Fresh from the press: frequent 05_2013, topic "UV-LEDs"
/en/research/research-news/fresh-from-the-press-frequent-05-2013-topic-uv-leds
The current frequent issue frequent with special focus on "ultraviolet light from LEDs" has just been published.