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New electro-thermal model for GaN-HEMT power transistor description
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GaN microwave power transistors consist of several cells, comprising several fingers each. In order to analyze and understand the interaction of the power bar’s parts, we developed a distributed…
WOCSDICE 2013
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The main topic of this year's 37. WOCSDICE (Workshop on Compound Semiconductor Devices and Integrated Circuits) were current development trends in semiconductor devices were. Resume of the conference…
Energy-sources of the future: novel diode lasers for ultra-high power laser applications
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The FBH will present the latest results from their project CryoLaser at CLEO 2013. CryoLaser has been selected as a "hot topic" for the central press event at the renowned technical conference in San…
Single-mode lasers at 1120 nm with electrical temperature-tuning of the internal grating
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FBH currently develops ridge-waveguide diode lasers emitting at 1120 nm with integrated gratings within the Yellow project. By means of frequency doubling the wavelength shall be bisected to 560 nm -…
Practical microsystems technology
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Apply now for the 8th ZEMI Microsystems Summer School!
Design, Fabrication, and Characterization of Miniaturized AuSn Flip-Chip Transitions up to 110 GHz
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Miniaturized flip-chip mounting is a very attractive packaging solution for high-frequency applications in the mm-wave through to the sub-THz spectrum. Current research results from the FBH confirm…
Best Paper – awarded by Journal of Electronic Materials
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An FBH publication was honored at this year's Electronics Materials Conference (26.-28.06.2013) in South Bend, Indiana (USA) with the Best Paper Award. The publication deals with tensile strain…
2. Berlin WideBaSe Conference
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Apply now to experience the comprehensive program on wide bandgap semiconductors.
10. International Conference on Nitride Semiconductors
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FBH presents several lectures on materials and devices based on group III-nitride semiconductors.
European Materials Research Society - Fall Meeting
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FBH presents an invited lecture.