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500 V switching of GaN HFETs
/en/research/research-news/500-v-switching-of-gan-hfets
Targets for next generation electronic power converters are – besides increased efficiency – reduced size in both weight and volume. The FBH developed new GaN‑based heterostructures on conductive…
More Light! – for Medicine
/en/media-center/press-releases/more-light-for-medicine
PET scan, CT and MRI are almost standard in today’s diagnostics – highly developed and very sophisticated. Although more capable and less cost-intensive, laser-optical diagnosis methods are, up to…
InP-on-BiCMOS integration enables ultra-broadband interconnects
/en/research/research-news/inp-on-bicmos-integration-enables-ultra-broadband-interconnects
The bandwidth available in microwave and milllimeterwave modules is often limited also by the packaging approach and the interconnects between the circuits. It is therefore, usually, restricted to a…
Charakterisierung der dynamischen Eigenschaften von Diodenlasersystemen
/en/events/charakterisierung-der-dynamischen-eigenschaften-von-diodenlasersystemen
Mandy Krüger, Ferdinand-Braun-Institut, Berlin
Scharfe Schnitte mit brillanten Diodenlasern
/en/media-center/press-releases/scharfe-schnitte-mit-brillanten-diodenlasern
Im EU-Projekt BRIDLE (Brilliant Industrial Diode Lasers) entwickeln Wissenschaftler des Ferdinand-Braun-Instituts, gemeinsam mit europäischen Partnern neue hochbrillante Laser auf Basis von…
Girls' Day at FBH
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Like any other year, FBH opened its doors for the Girls'Day. The girls learned from the institute's trainees and junior researchers about their world of employment
Ohmic backside contacts for blue-emitting laser diodes
/en/research/research-news/ohmic-backside-contacts-for-blue-emitting-laser-diodes
FBH developed a technology for ohmic contacts formation on the N-polar GaN surface which can be easily incorporated into the fabrication chain of a RW laser diode.
"Advances in Engineering" features FBH article
/en/research/research-news/advances-in-engineering-features-fbh-article
The FBH publication "optimization of 780 nm DFB diode lasers for high-power narrow linewidth emission" was featured by the Advances in Engineering magazine.
Leistungsfähige Mikromodule und neuartige Gittertechnologie bei roten Diodenlasern
/en/media-center/press-releases/leistungsfaehige-mikromodule-und-neuartige-gittertechnologie-bei-roten-diodenlasern
Das FBH präsentiert auf der Fachmesse Laser World of Photonics verschiedene miniaturisierte Laserstrahlquellen sowie Diodenlaser für den roten Spektralbereich, die eine neuartige Gittertechnologie…
AlGaAsP strain compensation layers in GaAs-based edge emitting diode lasers
/en/research/research-news/algaasp-strain-compensation-layers-in-gaas-based-edge-emitting-diode-lasers
Edge emitting semiconductor diode lasers designed for high output power are preferably realized in the GaAs/AlGaAs material system. FBH successfully managed to optimize the overall strain as well as…