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Analysis of Dissipated Power in Envelope Amplifier Output Filters
/en/research/publications/analysis-of-dissipated-power-in-envelope-amplifier-output-filters
The paper addresses power dissipation within the output filter of a buck-converter-based envelope amplifier (EA) and its effect on the overall envelope tracking (ET) system efficiency. For a…
Impact of Substrate Modes on mTRL-Calibrated CPW Measurements in G Band
/en/research/publications/impact-of-substrate-modes-on-mtrl-calibrated-cpw-measurements-in-g-band
On-wafer measurements at microwave and mm-wave frequencies require reliable calibration processes to deduct unwanted effects such as the impact of probe, the wafer environment, and the…
Nonlinear Three-Port Characterization of a Class-G Supply Modulated RF Power Amplifier using a Nonlinear Vector Network Analyzer
/en/research/publications/nonlinear-three-port-characterization-of-a-class-g-supply-modulated-rf-power-amplifier-using-a-nonlinear-vector-network-analyzer
A three-port nonlinear characterization system for 5G Envelope Tracking Power Amplifiers (ET PAs) is presented in this paper. The system allows measurement of wideband injected and reflected Radio…
A High-Efficiency GaN Transistor Module with Thick-Film BST-Based Tunable Matching Network
/en/research/publications/a-high-efficiency-gan-transistor-module-with-thick-film-bst-based-tunable-matching-network
Thick-film barium-strontium-titanate varactors package-integrated with GaN HEMTs are high-efficiency and robust tunable devices that enable frequency agility and efficiency optimization. The tunable…
A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology
/en/research/publications/a-highly-efficient-ultrawideband-traveling-wave-amplifier-in-inp-dhbt-technology
This letter presents a 1 to > 110-GHz ultrawideband traveling-wave amplifier (TWA) based on 500-nm transferred-substrate InP double-heterojunction bipolar transistor technology. The HBT cells…
Investigation of atomic layer deposition methods of Al2O3 on n-GaN
/en/research/publications/investigation-of-atomic-layer-deposition-methods-of-al2o3-on-n-gan
In this work, three atomic layer deposition (ALD) approaches are used to deposit an Al2O3 gate insulator on n-GaN for application in vertical GaN power switches: thermal ALD (ThALD), plasma-enhanced…
Compact Miniaturized Laser Module Emitting More Than 1.6 W of Yellow Light at 576 nm
/en/research/publications/compact-miniaturized-laser-module-emitting-more-than-16nbspw-of-yellow-light-at-576nbspnm
Laser light in the yellow-green spectral range has to rely on frequency conversion as suitable direct emitting laser diodes are not available yet. With the help of newly developed and highly…
Stress control of tensile-strained In1-xGaxP nanomechanical string resonators
/en/research/publications/stress-control-of-tensile-strained-in1-xgaxp-nanomechanical-string-resonators
We investigate the mechanical properties of freely suspended nanostrings fabricated from tensile-stressed, crystalline In1-xGaxP. The intrinsic strain arises during epitaxial growth as a consequence…
Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage measurements
/en/research/publications/accurate-determination-of-polarization-fields-in-0-0-0-1-c-plane-inalngan-heterostructures-with-capacitance-voltage-measurements
In this paper the internal electric fields of nearly lattice matched InAlN/GaN heterostructures were determined. Pin-diodes containing InAlN/GaN heterostructures grown on (0001) sapphire substrates…
Novel monolithically integrated bidirectional GaN HEMT
/en/research/publications/novel-monolithically-integrated-bidirectional-gan-hemt
Lateral chip architecture of GaN power semiconductors enables design of a monolithically integrated GaN HEMT featuring bidirectional blocking capability. The proposed bidirectional GaN HEMT allows…