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"Advances in Engineering" features FBH article
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The FBH publication "optimization of 780 nm DFB diode lasers for high-power narrow linewidth emission" was featured by the Advances in Engineering magazine.
Leistungsfähige Mikromodule und neuartige Gittertechnologie bei roten Diodenlasern
/en/media-center/press-releases/leistungsfaehige-mikromodule-und-neuartige-gittertechnologie-bei-roten-diodenlasern
Das FBH präsentiert auf der Fachmesse Laser World of Photonics verschiedene miniaturisierte Laserstrahlquellen sowie Diodenlaser für den roten Spektralbereich, die eine neuartige Gittertechnologie…
AlGaAsP strain compensation layers in GaAs-based edge emitting diode lasers
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Edge emitting semiconductor diode lasers designed for high output power are preferably realized in the GaAs/AlGaAs material system. FBH successfully managed to optimize the overall strain as well as…
New electro-thermal model for GaN-HEMT power transistor description
/en/research/research-news/new-electro-thermal-model-for-gan-hemt-power-transistor-description
GaN microwave power transistors consist of several cells, comprising several fingers each. In order to analyze and understand the interaction of the power bar’s parts, we developed a distributed…
WOCSDICE 2013
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The main topic of this year's 37. WOCSDICE (Workshop on Compound Semiconductor Devices and Integrated Circuits) were current development trends in semiconductor devices were. Resume of the conference…
Energy-sources of the future: novel diode lasers for ultra-high power laser applications
/en/media-center/press-releases/energy-sources-of-the-future-novel-diode-lasers-for-ultra-high-power-laser-applications
The FBH will present the latest results from their project CryoLaser at CLEO 2013. CryoLaser has been selected as a "hot topic" for the central press event at the renowned technical conference in San…
Single-mode lasers at 1120 nm with electrical temperature-tuning of the internal grating
/en/research/research-news/single-mode-lasers-at-1120-nm-with-electrical-temperature-tuning-of-the-internal-grating
FBH currently develops ridge-waveguide diode lasers emitting at 1120 nm with integrated gratings within the Yellow project. By means of frequency doubling the wavelength shall be bisected to 560 nm -…
Practical microsystems technology
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Apply now for the 8th ZEMI Microsystems Summer School!
Design, Fabrication, and Characterization of Miniaturized AuSn Flip-Chip Transitions up to 110 GHz
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Miniaturized flip-chip mounting is a very attractive packaging solution for high-frequency applications in the mm-wave through to the sub-THz spectrum. Current research results from the FBH confirm…
Best Paper – awarded by Journal of Electronic Materials
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An FBH publication was honored at this year's Electronics Materials Conference (26.-28.06.2013) in South Bend, Indiana (USA) with the Best Paper Award. The publication deals with tensile strain…