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IEEE International Electron Devices Meeting
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Conference on semiconductor and electronic device technology, design, manufacturing, physics, and modeling.
Epitaxie of III/V semiconductors
/en/events/epitaxie-of-iiiv-semiconductors
Workshop of the German Society for Crystal Growing and Epitaxy e.V. (DGKK).
Plasmonic GaN Detectors and Emitters for THz Frequencies
/en/research/research-news/plasmonic-gan-detectors-and-emitters-for-thz-frequencies
The FBH has started several activities in the field of emitters and detectors at THz frequencies using GaN HEMTs. This frequency range offers a variety of applications in biology, medicine, and…
FaBriDi - Fiber coupled high brilliance diode lasers
/en/research/research-news/fabridi-fiber-coupled-high-brilliance-diode-lasers
DBR tapered diode lasers are ideally suited as pump lasers and for frequency conversion. However, the use of this laser type is challenging due to its astigmatic laser beam. The FBH works therefore…
Monolithische Zwei-Wellenlängen DBR-Laser für sensorische Anwendungen
/en/research/research-news/monolithische-zwei-wellenlaengen-dbr-laser-fuer-sensorische-anwendungen
Dr. Bernd Sumpf, Dr. Jörg FrickeFerdinand-Braun-Institut, Berlin
Die Vorhersage der Einkopplung in Low Mode Fasern anhand gemessener Wigner-Verteilungen
/en/research/research-news/die-vorhersage-der-einkopplung-in-low-mode-fasern-anhand-gemessener-wigner-verteilungen
Mirko FischerFerdinand-Braun-Institut, Berlin
Low resistivity AlGaN:Si for deep UV-C light emitters
/en/research/research-news/low-resistivity-algansi-for-deep-uv-c-light-emitters
One of the key challenges in developing deep UV LEDs and laser diodes is the realization of low resistivity n- and p-type AlGaN layers with high aluminum mole fraction. Due to layer optimizations at…
FBH at Photonics West
/en/events/fbh-at-photonics-west-2
At the world-wide leading fair for optics and photonics, the Ferdinand-Braun-Institut presents its research results in various lectures and posters.
On-Wafer Measurement of Terahertz Devices and Components
/en/research/research-news/on-wafer-measurement-of-terahertz-devices-and-components
Robert M. WeikleUniversity of Virginia
UV-C AlGaN photodetectors with cut-off wavelength below 220 nm
/en/research/research-news/uv-c-algan-photodetectors-with-cut-off-wavelength-below-220-nm
In many applications, UV radiation is monitored in a certain wavelength range by photodetectors (PD). We have extended our studies on UV photodetectors to devices that are only sensitive in the lower…