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Girls' Day at FBH
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Like any other year, FBH opened its doors for the Girls'Day. The girls learned from the institute's trainees and junior researchers about their world of employment
Ohmic backside contacts for blue-emitting laser diodes
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FBH developed a technology for ohmic contacts formation on the N-polar GaN surface which can be easily incorporated into the fabrication chain of a RW laser diode.
"Advances in Engineering" features FBH article
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The FBH publication "optimization of 780 nm DFB diode lasers for high-power narrow linewidth emission" was featured by the Advances in Engineering magazine.
Leistungsfähige Mikromodule und neuartige Gittertechnologie bei roten Diodenlasern
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Das FBH präsentiert auf der Fachmesse Laser World of Photonics verschiedene miniaturisierte Laserstrahlquellen sowie Diodenlaser für den roten Spektralbereich, die eine neuartige Gittertechnologie…
AlGaAsP strain compensation layers in GaAs-based edge emitting diode lasers
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Edge emitting semiconductor diode lasers designed for high output power are preferably realized in the GaAs/AlGaAs material system. FBH successfully managed to optimize the overall strain as well as…
New electro-thermal model for GaN-HEMT power transistor description
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GaN microwave power transistors consist of several cells, comprising several fingers each. In order to analyze and understand the interaction of the power bar’s parts, we developed a distributed…
WOCSDICE 2013
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The main topic of this year's 37. WOCSDICE (Workshop on Compound Semiconductor Devices and Integrated Circuits) were current development trends in semiconductor devices were. Resume of the conference…
Energy-sources of the future: novel diode lasers for ultra-high power laser applications
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The FBH will present the latest results from their project CryoLaser at CLEO 2013. CryoLaser has been selected as a "hot topic" for the central press event at the renowned technical conference in San…
Single-mode lasers at 1120 nm with electrical temperature-tuning of the internal grating
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FBH currently develops ridge-waveguide diode lasers emitting at 1120 nm with integrated gratings within the Yellow project. By means of frequency doubling the wavelength shall be bisected to 560 nm -…
Practical microsystems technology
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Apply now for the 8th ZEMI Microsystems Summer School!