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Characterisation and comparison between different S-bend shaped GaAs Y-branch distributed Bragg reflector lasers emitting at 976nm
/en/research/publications/characterisation-and-comparison-between-different-s-bend-shaped-gaas-y-branch-distributed-bragg-reflector-lasers-emitting-at-976nm
Passive S-bend waveguides have been thoroughly studied in the past, however active S-bend structures such as those in Y-branch distributed Bragg reflector (DBR) ridge waveguide (RW) lasers have been…
220-325 GHz high-isolation SPDT switch in InP DHBT technology
/en/research/publications/220-325-ghz-high-isolation-spdt-switch-in-inp-dhbt-technology
A broadband single-pole-double-throw (SPDT) switch is presented covering 220-325 GHz in 800 nm transferred substrate InP DHBT technology. The SPDT switch configuration employs…
Space-borne Bose-Einstein condensation for precision interferometry
/en/research/publications/space-borne-bose-einstein-condensation-for-precision-interferometry
Owing to the low-gravity conditions in space, space-borne laboratories enable experiments with extended free-fall times. Because Bose-Einstein condensates have an extremely low expansion…
Effect of External Mechanical Stress on DC Performance and Reliability of Integrated E/D GaN HEMTs
/en/research/publications/effect-of-external-mechanical-stress-on-dc-performance-and-reliability-of-integrated-ed-gan-hemts
The purpose of this paper is to introduce a novel concept for integrating enhancement mode (E-mode) and depletion mode (D-mode) AlGaN/GaN HEMTs in the same fabrication process. Unlike existing E/D…
Dynamic drift effects in GaN power transistors: Correlation to device technology and mission profile
/en/research/publications/dynamic-drift-effects-in-gan-power-transistors-correlation-to-device-technology-and-mission-profile
GaN devices for high voltage power switching are facilitating smaller, more light-weighted and more efficient converter systems. In order to provide an optimum design of such systems it is necessary…
Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation
/en/research/publications/selective-area-isolation-of-beta-ga2o3-using-multiple-energy-nitrogen-ion-implantation
In this study, we report on the application of multiple energy nitrogen ion implantation for the electrical isolation of electronic devices on monoclinic β-Ga2O3. By the introduction of…
Rapid and adjustable shifted excitation Raman difference spectroscopy using a dual-wavelength diode laser at 785 nm
/en/research/publications/rapid-and-adjustable-shifted-excitation-raman-difference-spectroscopy-using-a-dual-wavelength-diode-laser-at-785nbspnm
In this paper, we present rapid and adjustable shifted excitation Raman difference spectroscopy (SERDS). A dual-wavelength diode laser emitting at 785 nm is used as the excitation light source.…
20 GHz Clock Frequency ROM-Less Direct Digital Synthesizer Comprising Unique Phase Control Unit in 0.25 µm SiGe Technology
/en/research/publications/20-ghz-clock-frequency-rom-less-direct-digital-synthesizer-comprising-unique-phase-control-unit-in-025-um-sige-technology
This paper presents work on a 20 GHz ROM-less direct digital synthesizer (DDS) with 12-bit phase and 6-bit amplitude resolution in a 0.25µm SiGe technology having ft/fmax 180/220GHz. The…
A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS Technology
/en/research/publications/a-hetero-integrated-w-band-transmitter-module-in-inp-on-bicmos-technology
This paper presents a W-band hetero-integrated transmitter module using InP-on-BiCMOS technology. It consists of a Phase Locked Loop (PLL) in 0.25 µm BiCMOS technology and a frequency…
An Ultra-broadband Low-Noise Distributed Amplifier in InP DHBT Technology
/en/research/publications/an-ultra-broadband-low-noise-distributed-amplifier-in-inp-dhbt-technology
This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit…